MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE HAVING METAL GATE
First Claim
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1. A manufacturing method for a semiconductor device having a metal gate comprising:
- providing a substrate having at least a first semiconductor device and a second semiconductor device formed thereon, the first semiconductor device being a p-type semiconductor device and the second semiconductor device being an n-type semiconductor device;
forming a first gate trench in the first semiconductor device and a second gate trench in the second semiconductor device;
forming a first work function metal layer in the first gate trench after forming the first gate trench;
performing a decoupled plasma oxidation (DPO) to the first work function metal layer;
forming a second work function metal layer in the second gate trench after the DPO; and
performing a decoupled plasma nitridation (DPN) to the second work function metal layer.
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Abstract
A manufacturing method for a semiconductor device having a metal gate includes providing a substrate having at least a first semiconductor device formed thereon, forming a first gate trench in the first semiconductor device, forming a first work function metal layer in the first gate trench, and performing a decoupled plasma oxidation to the first work function metal layer.
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Citations
20 Claims
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1. A manufacturing method for a semiconductor device having a metal gate comprising:
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providing a substrate having at least a first semiconductor device and a second semiconductor device formed thereon, the first semiconductor device being a p-type semiconductor device and the second semiconductor device being an n-type semiconductor device; forming a first gate trench in the first semiconductor device and a second gate trench in the second semiconductor device; forming a first work function metal layer in the first gate trench after forming the first gate trench; performing a decoupled plasma oxidation (DPO) to the first work function metal layer; forming a second work function metal layer in the second gate trench after the DPO; and performing a decoupled plasma nitridation (DPN) to the second work function metal layer. - View Dependent Claims (2, 3, 4, 8, 9, 10, 11, 12, 15, 16)
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5-7. -7. (canceled)
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13-14. -14. (canceled)
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17. A manufacturing method for a semiconductor device having a metal gate comprising:
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providing a substrate having at least a first semiconductor device and a second semiconductor device formed thereon, the first semiconductor device being a p-type semiconductor device and the second semiconductor device being an n-type semiconductor device; forming a first gate trench in the first semiconductor device and a second gate trench in the second semiconductor device; forming a second work function metal layer in the second gate trench after forming the second gate trench; performing a decoupled plasma nitridation (DPN) to the second work function metal layer; forming a first work function metal layer in the first gate trench after the DPN; and performing a decoupled plasma oxidation (DPO) to the first work function metal layer. - View Dependent Claims (18, 19, 20)
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Specification