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MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE HAVING METAL GATE

  • US 20130045594A1
  • Filed: 08/18/2011
  • Published: 02/21/2013
  • Est. Priority Date: 08/18/2011
  • Status: Active Grant
First Claim
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1. A manufacturing method for a semiconductor device having a metal gate comprising:

  • providing a substrate having at least a first semiconductor device and a second semiconductor device formed thereon, the first semiconductor device being a p-type semiconductor device and the second semiconductor device being an n-type semiconductor device;

    forming a first gate trench in the first semiconductor device and a second gate trench in the second semiconductor device;

    forming a first work function metal layer in the first gate trench after forming the first gate trench;

    performing a decoupled plasma oxidation (DPO) to the first work function metal layer;

    forming a second work function metal layer in the second gate trench after the DPO; and

    performing a decoupled plasma nitridation (DPN) to the second work function metal layer.

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