FILM DEPOSITION APPARATUS, SUBSTRATE PROCESSING APPARATUS, AND PLASMA GENERATING DEVICE

• US 20130047923A1
• Filed: 08/17/2012
• Published: 02/28/2013
• Est. Priority Date: 08/24/2011
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: KATO, Hitoshi, AIKAWA, Katsuyoshi, KOBAYASHI, Takeshi, USHIKUBO, Shigehiro
• Application Number:
  US13/588,271
• Publication Number:
  US 20130047923A1
• Time in Patent Office: Days
• US Class Current: 118/723.AN
• CPC Class Codes: C23C 16/4554 Plasma being used non-continuously in between ALD reactions C23C16/56 takes precedence
• CPC Class Codes: C23C 16/45548 having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
• CPC Class Codes: C23C 16/4585 Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
• CPC Class Codes: C23C 16/4586 Elements in the interior of the support, e.g. electrodes, heating or cooling devices
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32715 Workpiece holder
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma

Abstract

A disclosed film deposition apparatus which forms a film on a substrate inside a vacuum chamber including a turntable having a substrate mounting area, includes an antenna facing the substrate mounting area for converting the plasma generating gas to plasma, a Faraday shield intervening between the antenna and the substrate to prevent an electric field of an electromagnetic field from passing therethrough, the Faraday shield including slits arranged on the conductive plate parallel to the antenna, the slits being opened on the conductive plate in perpendicular to a direction of arranging the slits to enable a magnetic field to reach the substrate, a window opened in an area of the conductive plate surrounded by the slits, an inner conductive path between the slits and the window and grounded, and an outer conductive path on a side opposite to the window relative to the slits and surrounds the slits.

Claims

1. A film deposition apparatus which forms a film on a substrate by repeatedly performing a process of sequentially supplying a first process gas containing Si and a second process gas containing O₂ inside a vacuum chamber, the film deposition apparatus comprising:

a turntable including a substrate mounting area formed on one surface of the turntable to mount a substrate, the turntable being configured to rotate the substrate mounting area inside the vacuum chamber;

a first process gas supplying portion for supplying the first process gas to a first area over the turntable;

a second process gas supplying portion for supplying the second process gas to a second area over the turntable, the second area being separated, in a peripheral direction of the turntable, from the first area by a separating area being provided over the turntable and interposing between the first area and the second area;

a plasma generating gas supplying portion protruding inside the vacuum chamber to supply a plasma generating gas containing Ar and O₂ used for applying plasma to the substrate inside the vacuum chamber;

an antenna facing the substrate mounting area and being wound toward a direction perpendicular to the one surface of the turntable, the antenna being configured to convert the plasma generating gas to plasma using induction coupling; and

a Faraday shield intervening between the antenna and the substrate and being made of a conductive plate which is grounded to prevent an electric field included in an electromagnetic field, which is generated around the antenna, from passing through the Faraday shield including;

slits arranged on the conductive plate parallel to a loop of the antenna, the slits being opened on the conductive plate in directions perpendicular to a direction of arranging the slits to enable a magnetic field included in the electromagnetic field to reach the substrate,

a window opened in an area of the conductive plate surrounded by the slits, the window is configured to enable observation of generation of the plasma,

an inner conductive path which is formed between the slits and the window and grounded so as to prevent the window from communicating the slits, and

an outer conductive path which is formed on a side opposite to the window relative to the slits and surrounds the slits.

2. The film deposition apparatus according to claim 1,

wherein the loop of the antenna is arranged so as to surround the window.

3. The film deposition apparatus according to claim 1,

wherein the antenna and the Faraday shield are hermetically separated from an area for applying the plasma to the substrate.

4. A substrate processing apparatus comprising:

a vacuum chamber configured to accommodate a substrate;

a loading table including a substrate mounting area formed on one surface of the loading table to mount a substrate;

a plasma generating gas supplying portion protruding inside the vacuum chamber to supply a plasma generating gas containing Ar and O₂ used for applying plasma to the substrate inside the vacuum chamber;

an antenna facing the substrate mounting area and being wound toward a direction perpendicular to the one surface of the loading table, the antenna being configured to convert the plasma generating gas to plasma using induction coupling; and

a Faraday shield intervening between the antenna and the substrate and being made of a conductive plate which is grounded to prevent an electric field included in an electromagnetic field, which is generated around the antenna, from passing through the Faraday shield including;

slits arranged on the conductive plate parallel to a loop of the antenna, the slits being opened on the conductive plate in directions perpendicular to a direction of arranging the slits to enable a magnetic field included in the electromagnetic field to reach the substrate,

a window opened in an area of the conductive plate surrounded by the slits, the window is configured to enable observation of generation of the plasma,

an inner conductive path which is formed between the slits and the window and grounded so as to prevent the window from communicating the slits, and

an outer conductive path which is formed on a side opposite to the window relative to the slits and surrounds the slits.

5. A plasma generating device that generates plasma used for applying the plasma to a substrate, the plasma generating device comprising:

an antenna facing the substrate and being wound toward a direction perpendicular to one surface of the substrate, the antenna being configured to convert a plasma generating gas containing Ar and O₂ to plasma using induction coupling; and

a Faraday shield intervening between the antenna and the substrate and being made of a conductive plate which is grounded to prevent an electric field included in an electromagnetic field, which is generated around the antenna, the Faraday shield including;

slits arranged on the conductive plate parallel to a loop of the antenna, the slits being opened on the conductive plate in directions perpendicular to a direction of arranging the slits to enable a magnetic field included in the electromagnetic field to reach the substrate,

a window opened in an area of the conductive plate surrounded by the slits, the window is configured to enable observation of generation of the plasma,

an inner conductive path which is formed between the slits and the window and grounded so as to prevent the window from communicating the slits, and

an outer conductive path which is formed on a side opposite to the window relative to the slits and surrounds the slits.