DOUBLE PATTERNING ETCHING PROCESS
First Claim
Patent Images
1. A method of etching a substrate, the method comprising:
- (a) forming on the substrate, a plurality of double patterning features comprising silicon oxide, silicon nitride, or silicon oxynitride;
(b) providing in a process zone of a process chamber, the substrate having the double patterning feature;
(c) energizing in a remote chamber, an etching gas comprising nitrogen tri-fluoride, ammonia, and hydrogen;
(d) introducing the energized etching gas into the process zone of the process chamber to etch the double patterning features to form a solid residue on the substrate; and
(e) sublimating the solid residue by heating the substrate to a temperature of at least about 100°
C.
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Abstract
A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride. The substrate having the double patterning features is provided to a process zone. An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber. The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate. The solid residue is sublimated by heating the substrate to a temperature of at least about 100° C.
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Citations
20 Claims
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1. A method of etching a substrate, the method comprising:
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(a) forming on the substrate, a plurality of double patterning features comprising silicon oxide, silicon nitride, or silicon oxynitride; (b) providing in a process zone of a process chamber, the substrate having the double patterning feature; (c) energizing in a remote chamber, an etching gas comprising nitrogen tri-fluoride, ammonia, and hydrogen; (d) introducing the energized etching gas into the process zone of the process chamber to etch the double patterning features to form a solid residue on the substrate; and (e) sublimating the solid residue by heating the substrate to a temperature of at least about 100°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 19, 20)
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16. A method of etching a substrate, the method comprising:
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(a) providing in a process zone of a process chamber, a substrate having a plurality of double patterning features composed of silicon oxynitride; (b) energizing in a remote chamber, an etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen, the etching gas comprises a molar ratio of ammonia to nitrogen trifluoride of at least a 1;
1, and a molar ratio of ammonia to hydrogen of from about 1;
1 to about 1;
10;(c) introducing the energized etching gas into the process zone of the process chamber to etch the double patterning features to form a solid residue on the substrate; and (d) sublimating the solid residue by heating the substrate to a temperature of at least about 100°
C.
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17. A method of etching a substrate, the method comprising:
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(a) providing in a process zone of a process chamber, a substrate having a plurality of double patterning features composed of silicon oxynitride; (b) energizing in a remote chamber, an etching gas comprising hydrogen in a flow rate of from about 10 sccm to about 3,000 sccm, nitrogen trifluoride in a flow rate of from about 10 sccm to about 1,000 sccm, and ammonia in a flow rate of from about 10 sccm to about 1,000 sccm; (c) introducing the energized etching gas into the process zone of the process chamber to etch the double patterning features to form a solid residue on the substrate; and (d) sublimating the solid residue by heating the substrate to a temperature of from about 115°
C. to about 200°
C.
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18. A method of etching a substrate, the method comprising:
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(a) forming on the substrate, a plurality of double patterning features comprising silicon oxide, silicon nitride, or silicon oxynitride; (b) providing in a process zone of a process chamber, the substrate having the double patterning feature; (c) introducing an etching gas into the process zone of the process chamber to etch the double patterning features to form a solid residue on the substrate, the etching gas comprising hydrogen fluoride, ammonia, and hydrogen; and (d) sublimating the solid residue by heating the substrate to a temperature of from about 115°
C. to about 200°
C.
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Specification