TRENCH SEMICONDUCTOR POWER DEVICE AND FABRICATION METHOD THEREOF
First Claim
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1. A method of manufacturing a trench semiconductor power device, comprising the following steps:
- 1) etching an epitaxial layer on a substrate through a trench mask to form a plurality of gate electrode trenches, and injecting a doping agent to form a source region and a base region respectively;
2) etching an interlayer dielectric through a contact hole mask to form contact trenches, and filling the contact trenches to form trench plugs; and
3) etching metal through a metal mask to form a metal pad layer and wires.
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Abstract
A trench semiconductor power device and a fabrication method. The fabrication method includes: eroding an n epitaxial layer on an n+ substrate to form multiple gate trenches, and implanting with dopants to form source regions and P type base regions, respectively; eroding an interlayer dielectric to form a trench plug; and eroding an aluminum copper alloy to form a metal pad layer and wires. The method forms the source regions and the base regions by directly implanting, does not need source region masks and base region masks, has a simple fabrication process, and improves the quality and reliability of the device.
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Citations
17 Claims
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1. A method of manufacturing a trench semiconductor power device, comprising the following steps:
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1) etching an epitaxial layer on a substrate through a trench mask to form a plurality of gate electrode trenches, and injecting a doping agent to form a source region and a base region respectively; 2) etching an interlayer dielectric through a contact hole mask to form contact trenches, and filling the contact trenches to form trench plugs; and 3) etching metal through a metal mask to form a metal pad layer and wires. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification