SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device, comprising a semiconductor layer having a first trench having a first width and a second trench having a second width different from the first width and connected with the first trench, whereina compensation pattern for gradually compensating a difference between the first width and the second width, is formed at a place of contact between the first trench and the second trench.
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Accused Products
Abstract
Technology is provided in which, when forming a trench of a narrow width in a thick semiconductor layer, a trench can be formed without the occurrence of semiconductor residue. In this Specification, a semiconductor device in which a trench is formed in a semiconductor layer is disclosed. In the semiconductor layer of the semiconductor device, a compensation pattern which compensates for sudden changes in the width of the trench is formed at a place at which the width of the trench changes suddenly. In the semiconductor layer of the above-described semiconductor device, since a compensation pattern is formed at a place at which the trench width changes suddenly, in the case where forming the trench using a deep RIE method, the occurrence of steep inclined portions arising from semiconductor residue can be prevented. Consequently, when forming, a trench of a narrow width in a thick semiconductor layer, the occurrence of semiconductor residue can be prevented.
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Citations
10 Claims
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1. A semiconductor device, comprising a semiconductor layer having a first trench having a first width and a second trench having a second width different from the first width and connected with the first trench, wherein
a compensation pattern for gradually compensating a difference between the first width and the second width, is formed at a place of contact between the first trench and the second trench.
Specification