IMAGE SENSOR, IMAGING APPARATUS AND LIVE BODY IMAGING APPARATUS

• US 20130050562A1
• Filed: 08/16/2012
• Published: 02/28/2013
• Est. Priority Date: 08/25/2011
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Nakata, Masashi
• Granted Patent: US 8,922,690 B2
• Time in Patent Office: Days
• US Class Current: 348/336
• CPC Class Codes: A61B 2562/0233 Special features of optical sensors or probes classified in A61B5/00
• CPC Class Codes: A61B 2562/046 in a matrix array
• CPC Class Codes: A61B 5/14552 Details of sensors specially adapted therefor
• CPC Class Codes: G02B 5/201 in the form of arrays
• CPC Class Codes: H01L 27/14605 Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H04N 2209/047 using multispectral pick-up elements
• CPC Class Codes: H04N 23/10 for generating image signals from different wavelengths
• CPC Class Codes: H04N 23/11 for generating image signals from visible and infrared light wavelengths
• CPC Class Codes: H04N 25/131 including elements passing infrared wavelengths
• CPC Class Codes: H04N 25/133 including elements passing panchromatic light, e.g. filters passing white light
• CPC Class Codes: H04N 25/134 based on three different wavelength filter elements
• CPC Class Codes: H04N 25/583 with different integration times
• CPC Class Codes: H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors
• CPC Class Codes: H04N 25/77 Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
• CPC Class Codes: H04N 25/772 comprising A/D, V/T, V/F, I/T or I/F converters
• CPC Class Codes: H04N 25/778 : comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

Abstract

An image sensor including a pixel unit, the pixel unit including a photodiode, a first color filter and a second color filter each disposed in a different position on a plane above the photodiode, and a first on-chip lens disposed over the first color filter and a second on-chip lens disposed over the second color filter.

Claims

1. An image sensor comprising:

a pixel unit,

the pixel unit including

a photodiode,

a first color filter and a second color filter each disposed in a different position on a plane above the photodiode, and

a first on-chip lens disposed over the first color filter and a second on-chip lens disposed over the second color filter.

2. The image sensor according to claim 1, wherein each of the first color filter and the second color filter has a spectral characteristic different from each other.

3. The image sensor according to claim 2, wherein the pixel unit outputs an electrical signal of a level corresponding to a composition result of the spectral characteristics of the first color filter and the second color filter.

4. The image sensor according to claim 2, wherein:

the photodiode includes a first photodiode disposed below the first color filter and a second photodiode disposed below the second color filter, and

electrical signals output from the pixel unit having levels corresponding to the respective spectral characteristics of the first color filter and the second color filter are added.

5. The image sensor according to claim 4, wherein the pixel unit further includes a common floating diffusion that adds electrical signals output from each of the first photodiode and the second photodiode.

6. The image sensor according to claim 4, wherein each of the electrical signals output from the first photodiode and the second photodiode is amplified by an individually preset gain.

7. The image sensor according to claim 4, wherein each of the first photodiode and the second photodiode is individually preset with a charge accumulating time.

8. The image sensor according to claim 2, wherein each of the first color filter and the second color filter has a characteristic to transmit infrared light.

9. The image sensor according to claim 2, wherein the pixel unit includes:

a group of color filters which includes one or more color filters in addition to the first color filter and the second color filter, and

a group of on-chip lenses which includes one or more on-chip lenses in addition to the first on-chip lens and the second on-chip lens, the one or more on-chip lenses being disposed over the one or more color filters in addition to the first color filter and the second color filter.

10. The image sensor according to claim 9, wherein the pixel unit outputs an electrical signal of a level corresponding to a composition result of the respective spectral characteristics of the color filter group.

11. The image sensor according to claim 9, wherein:

the photodiode is constituted of a photodiode group each disposed below the color filter group, and

electrical signals output from the pixel unit each having a level corresponding to a spectral characteristic of the color filter group are added.

12. The image sensor according to claim 11, wherein the pixel unit further includes a common floating diffusion that adds the electrical signals each output from the photodiode groups.

13. The image sensor according to claim 11, wherein each of the electrical signals output from the photodiode groups is amplified by an individually preset gain.

14. The image sensor according to claim 11, wherein each photodiode group is individually preset with a charge accumulating time.

15. The image sensor according to claim 10, wherein each of the color filter groups has a characteristic to transmit infrared light.

16. The image sensor according to claim 1, wherein a waveguide is formed above the photodiode.

17. The image sensor according to claim 1, wherein the photodiode has a plurality of output modes which are selectively switchable through an inner or outer control of the image sensor.

18. An imaging apparatus mounted with an image sensor comprising a pixel unit, the pixel unit including:

a photodiode;

a first color filter and a second color filter each disposed in a different position on a plane above the photodiode'"'"' and

a first on-chip lens disposed over the first color filter and a second on-chip lens disposed over the second color filter.

19. A live body imaging apparatus including an imaging apparatus mounted with an image sensor comprising a pixel unit, the pixel unit including:

a photodiode;

a first color filter and a second color filter each disposed in a different position on a plane above the photodiode; and

a first on-chip lens disposed over the first color filter and a second on-chip lens disposed over the second color filter,

wherein,

the imaging apparatus takes a picture of a live body as an object.