FUNCTIONAL DEVICE-EMBEDDED SUBSTRATE

• US 20130050967A1
• Filed: 01/19/2011
• Published: 02/28/2013
• Est. Priority Date: 03/16/2010
• Status: Abandoned Application

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Ohshima, Daisuke, Kikuchi, Katsumi, Nakashima, Yoshiki, Mori, Kentaro, Yamamichi, Shintaro
• Application Number:
  US13/634,088
• Publication Number:
  US 20130050967A1
• Time in Patent Office: Days
• US Class Current: 361/764
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/20 Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 2224/24227 the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/18162 : of a chip with build-up interconnect
• CPC Class Codes: H01L 2924/3511 : Warping
• CPC Class Codes: H05K 1/185 : Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit semiconductor chips encapsulated by interconnect and support structures H01L23/5389, H01L24/00
• CPC Class Codes: H05K 2201/10416 : Metallic blocks or heatsinks completely inserted in a PCB metallic supports H05K3/0061
• CPC Class Codes: H05K 3/4602 : characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated

Abstract

An object of the present invention is to provide a functional device-embedded substrate that can be thinned and suppress occurrence of warpage. The present invention provides a functional device-embedded substrate including at least a functional device including an electrode terminal, and a covering insulating layer covering at least an electrode terminal surface and a side surface of the functional device, the functional device-embedded substrate including a first pillar structure around the functional device inside the covering insulating layer, the first pillar structure including a material having a thermal expansion coefficient between thermal expansion coefficients of the functional device and the covering insulating layer, wherein the first pillar structure is arranged at a position where a shortest distance from a side surface of the functional device to a side surface of the first pillar structure is smaller than a thickness of the functional device.

Claims

1. A functional device-embedded substrate comprising at least a functional device including an electrode terminal, and a covering insulating layer covering at least an electrode terminal surface and a side surface of the functional device, wherein

the functional device-embedded substrate comprises a first pillar structure around the functional device inside the covering insulating layer, the first pillar structure being comprised of a material having a thermal expansion coefficient between thermal expansion coefficients of the functional device and the covering insulating layer, and

the first pillar structure is arranged at a position where a shortest distance from a side surface of the functional device to a side surface of the first pillar structure is smaller than a thickness of the functional device.

2. The functional device-embedded substrate according to claim 1, wherein the first pillar structure is arranged around a corner of the functional device.

3. The functional device-embedded substrate according to claim 1, wherein the first pillar structure is arranged also at a position facing a side surface of the functional device.

4. The functional device-embedded substrate according to claim 1, further comprising a second pillar structure inside the covering insulating layer, the second pillar structure comprised of a material having a thermal expansion coefficient between the thermal expansion coefficients of the functional device and the covering insulating layer,

wherein the second pillar structure is arranged at a position where a shortest distance from a side surface of the functional device to a side surface of the second pillar structure is equal to or larger than the thickness of the functional device.

5. The functional device-embedded substrate according to claim 4, wherein a plurality of the first columnar structures and a plurality of the second columnar structures are arranged in a grid or a staggered arrangement.

6. The functional device-embedded substrate according to claim 5, wherein a pitch of the grid increases as the distance from the functional device increases.

7. The functional device-embedded substrate according to claim 5, wherein the first pillar structures and the second pillar structures each have a thickness that increases as the distance of the first pillar structures and the second pillar structures from the functional device increases.

8. The functional device-embedded substrate according to claim 1, wherein the first pillar structure or the second pillar structure has a thickness equal to or larger than the thickness of the functional device.

9. The functional device-embedded substrate according to claim 1, wherein the first pillar structure is formed so as to penetrate through the covering insulating layer and have a thickness equal to a thickness of the covering insulating layer.

10. The functional device-embedded substrate according to claim 1, wherein the first pillar structure is comprised of an insulator material.

11. The functional device-embedded substrate according to claim 1, wherein the first pillar structure includes a conductor material.

12. The functional device-embedded substrate according to claim 1, wherein the first pillar structure has a circular column shape or a polygonal column shape.

13. The functional device-embedded substrate according to claim 1, further comprising a front-side wiring layer on the electrode terminal surface of the functional device, the front-side wiring layer being electrically connected to the electrode terminal.

14. The functional device-embedded substrate according to claim 1, further comprising a back-side wiring layer on a surface opposite to the electrode terminal surface of the functional device, the back-side wiring layer being electrically connected to the electrode terminal through at least an interlayer via provided in the covering insulating layer.

15. The functional device-embedded substrate according to claim 1, further comprising a support on a surface opposite to the electrode terminal surface of the functional device.

16. The functional device-embedded substrate according to claim 11 further comprising:

a front-side wiring layer on the electrode terminal surface of the functional device, the front-side wiring layer being electrically connected to the electrode terminal; and

a back-side wiring layer on a surface opposite to the electrode terminal surface of the functional device, the back-side wiring layer being electrically connected to the electrode terminal,

wherein the first pillar structure doubles as an interlayer via electrically connecting the front-side wiring layer and the back-side wiring layer.

17. The functional device-embedded substrate according to claim 1, wherein the first pillar structure is formed in an area having a distance from the side surface of the functional device in a range of no more than 10×

d1, d1 represents the shortest distance.

18. The functional device-embedded substrate according to claim 1, wherein the first pillar structure has a thermal expansion coefficient of 5×

10̂

−

6 to 30×

10̂

−

6 [1/°

C.], and the covering insulating layer has a thermal expansion coefficient of 35×

10̂

−

6 to 70×

10̂

−

6 [1/°

C.].

19. The functional device-embedded substrate according to claim 1, wherein the functional device is a semiconductor chip.

20. The functional device-embedded substrate according to claim 19, wherein the semiconductor chip has a thickness of 50 to 200 μ

m.