BULB TYPE SEMICONDUCTOR LIGHT-EMITTING DEVICE LAMP

• US 20130051013A1
• Filed: 08/29/2012
• Published: 02/28/2013
• Est. Priority Date: 08/29/2011
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: ARIYOSHI, Tetsuo, PARK, Cheon-ho, YU, Byeong-hyeon, YUN, Ji-hoon
• Granted Patent: US 8,956,011 B2
• Time in Patent Office: Days
• US Class Current: 362/235
• CPC Class Codes: F21K 9/00 Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
• CPC Class Codes: F21K 9/232 specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
• CPC Class Codes: F21V 29/74 with fins or blades
• CPC Class Codes: F21V 3/02 characterised by the shape
• CPC Class Codes: F21V 3/061 the material being glass
• CPC Class Codes: F21V 3/062 the material being plastics
• CPC Class Codes: F21V 3/10 characterised by coatings
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/19107 off-chip wires

Abstract

A bulb-type semiconductor light-emitting device lamp having wide light distribution characteristics which are similar to those of a typical incandescent bulb is provided. The semiconductor light-emitting device lamp includes: a plurality of light-emitting devices that are arranged such that light is emitted therefrom toward a central axis of the bulb-type semiconductor light-emitting device lamp. Also, the bulb-type semiconductor light-emitting device lamp includes a heat dissipation structure having a plurality of installation surfaces that surround the central axis and are separated from each other, wherein each of the plurality of light-emitting devices includes one or more light-emitting devices.

Claims

1. A bulb-type semiconductor light-emitting device lamp comprising:

a plurality of light-emitting devices that are arranged to emit light toward a central axis of the bulb-type semiconductor light-emitting device lamp.

2. The bulb-type semiconductor light-emitting device lamp of claim 1, further comprising:

a heat dissipation structure comprising a plurality of installation surfaces that surround the central axis and are separated from each other,

wherein one or more light-emitting devices of the plurality of light-emitting devices are arranged on each of the installation surfaces along the central axis.

3. The bulb-type semiconductor light-emitting device lamp of claim 2, wherein the plurality of installation surfaces are rotationally symmetric about the central axis.

4. The bulb-type semiconductor light-emitting device lamp of claim 3, wherein a number of the plurality of installation surfaces is an odd number of 3 or more.

5. The bulb-type semiconductor light-emitting device lamp of claim 2, wherein the plurality of installation surfaces do not face each other with respect to the central axis.

6. The bulb-type semiconductor light-emitting device lamp of claim 2, wherein the plurality of installation surfaces are arranged at different intervals.

7. The bulb-type semiconductor light-emitting device lamp of claim 6, wherein a number of light-emitting devices mounted on a first installation surface of the plurality of installation surfaces is different from a number of light-emitting devices mounted on a second installation surface of the plurality of installation surfaces.

8. The bulb-type semiconductor light-emitting device lamp of claim 2, wherein the plurality of installation surfaces extend in a direction parallel to the central axis.

9. The bulb-type semiconductor light-emitting device lamp of claim 2, wherein the plurality of installation surfaces are inclined at an angle with respect to the central axis.

10. The bulb-type semiconductor light-emitting device lamp of claim 2, wherein the heat dissipation structure further comprises:

a main body;

a plurality of installation portions comprising the plurality of installation surfaces, and exposed surfaces opposite to the plurality of installation surfaces and exposed to an outside of the bulb-type semiconductor light-emitting device lamp, wherein ends of the plurality of installation portions are connected to each other to form a summit of a bulb shape; and

a connection portion which connects the main body and the plurality of installation portions.

11. The bulb-type semiconductor light-emitting device lamp of claim 10, wherein the exposed surfaces are curved surfaces that constitute a portion of the bulb shape.

12. The bulb-type semiconductor light-emitting device lamp of claim 10, further comprising a cover member that is disposed between adjacent installation portions of the plurality of installation portions, and encapsulates an inner space in which the plurality of light-emitting devices are disposed together with the plurality of installation portions.

13. The bulb-type semiconductor light-emitting device lamp of claim 10, wherein the exposed surfaces comprise a heat dissipation pattern which dissipates heat.

14. The bulb-type semiconductor light-emitting device lamp of claim 10, wherein the main body has a heat dissipation pattern which dissipates heat.

15. The bulb-type semiconductor light-emitting device lamp of claim 10, wherein the main body comprises a plurality of heat dissipation fins which dissipate heat.

16. The bulb-type semiconductor light-emitting device lamp of claim 2, wherein a first installation surface, of the plurality of installation surfaces, faces a second installation surface, of the plurality of installation surfaces, with respect to the central axis of the bulb-type semiconductor light-emitting device lamp.

17. The bulb-type semiconductor light-emitting device lamp of claim 10, further comprising a high-reflection coating on at least one of a surface of the main body, surfaces of the plurality of connection portions, and a surface of the installation portion.

18. A bulb-type semiconductor light-emitting device lamp comprising:

a first light-emitting device arranged on a first region of an interior surface of the bulb-type semiconductor light-emitting device lamp and which emits light toward a second region of the interior surface; and

a second light-emitting device arranged on a third region of the interior surface and which emits light toward a fourth region of the interior surface.

19. The bulb-type semiconductor light-emitting device lamp of claim 18, further comprising:

a heat dissipation structure comprising a plurality of installation surfaces that surround the central axis of the bulb-type semiconductor light-emitting device lamp and are separated from each other,

wherein each of the plurality of installation surfaces comprises one or more light-emitting devices.

20. The bulb-type semiconductor light-emitting device lamp of claim 19, wherein the one or more light-emitting devices of a first installation surface, of the plurality of installation surfaces, emits light toward a second installation surface, of the plurality of installation surfaces.