×

CIRCUIT FOR GENERATING WRITE SIGNAL, VARIABLE RESISTANCE MEMORY DEVICE, AND METHOD FOR PROGRAMMING VARIABLE RESISTANCE MEMORY

  • US 20130051120A1
  • Filed: 02/09/2012
  • Published: 02/28/2013
  • Est. Priority Date: 08/23/2011
  • Status: Active Grant
First Claim
Patent Images

1. A circuit for generating a write signal, the circuit comprising:

  • a pre-emphasis signal generator that receives location information of a to-be-programmed memory cell and generates a pre-emphasis signal depending on the location information of the to-be-programmed memory cell; and

    a write driver that generates a program signal corresponding to data to be programmed in the to-be-programmed memory cell, generates a write signal by combining the program signal with the pre-emphasis signal supplied from the pre-emphasis signal generator, and outputs the write signal to the to-be-programmed memory cell.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×