SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN

• US 20130052827A1
• Filed: 04/18/2012
• Published: 02/28/2013
• Est. Priority Date: 08/26/2011
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Wang, Yunyu, Wang, Anchuan, Zhang, Jingchun, Ingle, Nitin K., Lee, Young S.
• Granted Patent: US 8,679,982 B2
• Time in Patent Office: Days
• US Class Current: 438/694
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/32137 of silicon-containing layers

Abstract

A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.

Claims

1. A method of etching a patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate has an exposed silicon-and-oxygen-containing region and an exposed region of a second material having a different chemical stoichiometry from the exposed silicon-and-oxygen-containing region, the method of etching the patterned substrate comprising sequential steps of:

(1) a first dry etch stage comprising;

flowing each of a first fluorine-containing precursor and a hydrogen-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a first plasma in the remote plasma region to produce first plasma effluents, and

forming protective solid by-product on the exposed silicon-and-oxygen-containing region to form a protected silicon-and-oxygen-containing region, wherein forming the protective solid by-product comprises flowing the first plasma effluents into the substrate processing region in a showerhead;

(2) a second dry etch stage comprising

flowing a second fluorine-containing precursor into the remote plasma region while forming a second plasma in the remote plasma region to produce second plasma effluents, and

etching the exposed region of the second material faster than the protected silicon-and-oxygen-containing region by flowing the second plasma effluents into the substrate processing region through through-holes in the showerhead; and

(3) sublimating the protective solid by-product from the protected silicon-and-oxygen-containing region by raising a temperature of the patterned substrate.

2. The method of etching the patterned substrate of claim 1 wherein the exposed silicon-and-oxygen-containing region is silicon oxide.

3. The method of etching the patterned substrate of claim 1 wherein the exposed silicon-and-oxygen-containing region consists essentially of silicon and oxygen.

4. The method of etching the patterned substrate of claim 1 wherein the exposed silicon-and-oxygen-containing region comprises about 30% or more silicon and about 30% or more oxygen.

5. The method of etching the patterned substrate of claim 1 wherein the temperature of the patterned substrate is greater than or about −

20°

C. and less than or about 75°

C. during each of the first dry etch stage and the second dry etch stage.

6. The method of etching the patterned substrate of claim 1 wherein a pressure within the substrate processing region is below or about 50 Torr and above or about 0.1 Torr during each of the first dry etch stage and the second dry etch stage.

7. The method of etching the patterned substrate of claim 1 wherein forming the first plasma in the remote plasma region and the second plasma in the remote plasma region comprises applying RF power between about 10 Watts and about 15000 Watts to the remote plasma region during each of the first dry etch stage and the second dry etch stage.

8. The method of etching the patterned substrate of claim 1 wherein the first plasma and the second plasma are both capacitively-coupled plasmas.

9. The method of etching the patterned substrate of claim 1 wherein the second material is single crystalline silicon or polysilicon.

10. The method of etching the patterned substrate of claim 9 wherein an etch selectivity of the method of etching the patterned substrate (exposed region of the second material:

exposed silicon-and-oxygen-containing region) is greater than or about 20;

1.

11. The method of etching the patterned substrate of claim 1 wherein the second material comprises silicon and nitrogen.

12. The method of etching the patterned substrate of claim 11 wherein an etch selectivity of the method of etching the patterned substrate (exposed region of the second material:

exposed silicon-and-oxygen-containing region) is greater than or about 5;

1.

13. The method of etching the patterned substrate of claim 1 wherein the second material comprises an atomic percentage of about 30% or more silicon and about 30% or more nitrogen.

14. The method of etching the patterned substrate of claim 1 wherein the second material is silicon nitride.

15. The method of etching the patterned substrate of claim 1 wherein the substrate processing region is essentially plasma-free during each of the first dry etch stage and the second dry etch stage.

16. The method of etching the patterned substrate of claim 1 wherein the first fluorine-containing precursor comprises at least one of atomic fluorine, diatomic fluorine, nitrogen trifluoride, carbon tetrafluoride and xenon difluoride.

17. The method of etching the patterned substrate of claim 1 wherein the hydrogen-containing precursor comprises at least one of atomic hydrogen, molecular hydrogen, ammonia, a perhydrocarbon and an incompletely halogen-substituted hydrocarbon.

18. The method of etching the patterned substrate of claim 1 wherein the second fluorine-containing precursor is not mixed with a source of hydrogen and the second plasma effluents is essentially devoid of hydrogen.

19. The method of etching the patterned substrate of claim 1 wherein there is essentially no concentration of ionized species and free electrons within the substrate processing region during the second dry etch stage.

20. The method of etching the patterned substrate of claim 1 wherein the second material is essentially devoid of oxygen.