BAD PAGE MANAGEMENT IN MEMORY DEVICE OR SYSTEM
First Claim
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1. A memory device, comprising:
- a memory cell array comprising a plurality of memory cells arranged in pages and columns, wherein the memory cell array is divided into a first memory block and a second memory block each corresponding to an array of the memory cells; and
a bad page map that stores bad page location information indicating whether each of the pages of the first memory block is good or bad,wherein a fail page address of the first memory block is replaced by a pass page address of the second memory block according to the bad page location information.
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Abstract
A memory device comprises a memory cell array and a bad page map. The memory cell array comprises a plurality of memory cells arranged in pages and columns, wherein the memory cell array is divided into a first memory block and a second memory block each corresponding to an array of the memory cells. The bad page map stores bad page location information indicating whether each of the pages of the first memory block is good or bad. A fail page address of the first memory block is replaced by a pass page address of the second memory block according to the bad page location information.
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Citations
20 Claims
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1. A memory device, comprising:
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a memory cell array comprising a plurality of memory cells arranged in pages and columns, wherein the memory cell array is divided into a first memory block and a second memory block each corresponding to an array of the memory cells; and a bad page map that stores bad page location information indicating whether each of the pages of the first memory block is good or bad, wherein a fail page address of the first memory block is replaced by a pass page address of the second memory block according to the bad page location information. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A memory system, comprising:
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a memory device comprising a first memory block, a second memory block, and a bad page map that stores bad page location information of the first memory block; and a memory controller that stores fail page addresses of the first memory block and pass page addresses of the second memory block that respectively replace the fail page addresses, according to bit information transmitted by the bad page map. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of operating a memory device comprising a memory cell array and a bad page map, comprising:
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storing, in the bad page map, bad page location information indicating whether each page in a first memory block of the memory cell array is good or bad; and replacing a fail page address of the first memory block with a pass page address in a second memory block of the memory cell array according to the bad page location information. - View Dependent Claims (18, 19, 20)
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Specification