BACK CONTACT LAYER STRUCTURE FOR GROUP IBIIIAVIA PHOTOVOLTAIC CELLS

• US 20130056059A1
• Filed: 07/03/2012
• Published: 03/07/2013
• Est. Priority Date: 09/03/2010
• Status: Abandoned Application

• Current Assignee: SoloPower Systems, Inc.
• Original Assignee: SoloPower Systems, Inc.
• Inventors: Freitag, James, Pinarbasi, Mustafa
• Application Number:
  US13/541,602
• Publication Number:
  US 20130056059A1
• Time in Patent Office: Days
• US Class Current: 136/256
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: H01L 31/03928 including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
• CPC Class Codes: H01L 31/0749 including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

Described are new ohmic contact materials and diffusion barriers for Group IBIIIAVIA based solar cell structures, which eliminate two way diffusion while preserving the efficient ohmic contacts between the substrate and the absorber layers.

Claims

1. A method of manufacturing a Cu(In,Ga)Se₂ thin-film solar cell on a conductive substrate, comprising:

forming a multilayer back contact on a conductive flexible substrate, wherein the multilayer back contact includes a diffusion barrier layer;

forming an intermediate layer on the diffusion barrier layer, wherein the intermediate layer is a metal layer;

forming an absorber precursor including Cu species, In species, Ga species and Se species over the intermediate layer;

applying heat to the absorber precursor to form therefrom an absorber layer including a Cu(In,Ga)Se₂ thin film compound, wherein the step of forming the absorber layer causes some of the Se species in the absorber layer to diffuse towards the intermediate layer and at least partially transforms the intermediate layer into a metal-selenide layer and wherein the diffusion barrier layer inhibits diffusion of the Se species across the diffusion barrier during the step of applying heat;

disposing a transparent conductive layer on the thin film absorber layer, the transparent layer including a buffer layer deposited on the thin film absorber and a transparent conductive oxide layer formed on the buffer layer; and

forming a top terminal on the transparent conductive layer, thereby resulting in the Cu(In,Ga)Se₂ thin-film solar cell.

2. The method of claim 1, wherein the step of forming a multilayer back contact includes depositing a contact layer including one of molybdenum (Mo), tungsten (W) and titanium (Ti) and tantalum (Ta), and depositing the diffusion barrier layer onto the contact layer.

3. The method of claim 2, wherein the diffusion barrier includes a nitride barrier film formed over the contact layer and a nucleation layer formed over the nitride barrier film.

4. The method of claim 3, wherein the nitride barrier film includes one of titanium-nitride (TiN), tantalum nitride (TaN), and tungsten nitride (WN), and wherein the nucleation film includes one of Ru, Os, Ir and Pt.

5. The method of claim 4, wherein the nitride barrier film titanium-nitride (TiN) film, and wherein the nucleation film is a Ru-film.

6. The method of claim 3, wherein the step of forming the intermediate layer on the diffusion barrier layer includes forming the intermediate layer on the nucleation film.

7. The method of claim 3, wherein the intermediate layer includes one of Mo, W, Ti and Ta.

8. The method of claim 7, wherein the intermediate layer is a Mo-layer.

9. The method of claim 7, wherein the step of applying heat the Mo, W, Ti or Ta layer is selenized and transformed into a MoSe₂, WSe₂, TiSe₂ or TaSe₂ layer.

10. The method of claim 1, wherein the step of forming the absorber precursor comprises:

electroplating a film stack including at least a copper (Cu) film, an indium (In) film and a gallium (Ga) film;

depositing a selenium (Se) film on the film stack using one of an electroplating process and a vapor deposition process

11. The method of claim 1, wherein the buffer layer includes CdS and the transparent conductive oxide layer includes ZnO.

12. The method of claim 1, wherein the contact layer has a thickness in the range of 100-2000 nm.

13. The method of claim 3, wherein the nucleation film has a thickness in the range of 1-50 nm.

14. The method of claim 3, wherein the nitride barrier film has a thickness in the range of 1-50 nm.

1-1. A solar cell, comprising:

a flexible conductive substrate;

a back contact formed on the flexible conductive substrate, wherein the back contact includes a contact layer formed on the flexible conductive substrate and a diffusion barrier layer formed on the contact layer;

an ohmic contact layer is formed on the diffusion barrier layer of the back contact, wherein the ohmic contact layer is a metal-selenide layer;

a thin film absorber layer including Cu species, In species, Ga species and Se species formed on the ohmic contact layer;

a transparent layer deposited on the thin film absorber layer, the transparent layer including a buffer layer deposited on the thin film absorber and a transparent conductive oxide layer formed on the buffer layer; and

a top terminal formed on the transparent layer;

wherein the diffusion barrier layer inhibits diffusion of the selenium species from the thin film absorber layer across the diffusion barrier layer.