SEMICONDUCTOR DEVICE HAVING AN InGaN LAYER

• US 20130058369A1
• Filed: 11/02/2012
• Published: 03/07/2013
• Est. Priority Date: 12/07/2009
• Status: Abandoned Application

• Current Assignee: Soitec S.A.
• Original Assignee: Soitec S.A.
• Inventors: Letertre, Fabrice M.
• Application Number:
  US13/667,430
• Publication Number:
  US 20130058369A1
• Time in Patent Office: Days
• US Class Current: 372/44.01
• CPC Class Codes: H01S 2301/173 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
• CPC Class Codes: H01S 2304/12 Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
• CPC Class Codes: H01S 5/0215 Bonding to the substrate
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

An InGaN-on-substrate structure that includes an InGaN layer and two mirror layers on opposing sides of and sandwiching the InGaN layer. The InGN layer includes an InGaN seed layer and an active InGaN layer grown on the InGaN seed layer. Such a structure is useful in a vertical optoelectronic device.

Claims

1. A vertical optoelectronic structure comprising:

an InGaN layer; and

two mirror layers on opposing sides of and sandwiching the InGaN layer.

2. The structure of claim 1, wherein the InGN layer includes an InGaN seed layer and an active InGaN layer grown on the InGaN seed layer.

3. The structure of claim 2, wherein the active InGaN layer has a thickness of 100 nm to 2000 nm.

4. The structure of claim 2, wherein the InGaN seed layer has a thickness of 5 nm to 500 nm.

5. The structure of claim 1, further comprising a substrate atached to one of the mirror layers.

6. The structure of claim 5, which further comprises a dielectric layer between the first substrate and the InGaN seed layer.

7. The structure of claim 1, wherein the mirror layers are distributed Bragg reflectors.

8. The structure of claim 7, wherein the mirror layers comprise all-oxide distributed Bragg reflectors or III-nitride distributed Bragg reflectors.

9. A vertical optoelectronic device comprising the structure of claim 1.