INFORMATION STORAGE DEVICE AND INFORMATION STORAGE METHOD

• US 20130061088A1
• Filed: 08/31/2012
• Published: 03/07/2013
• Est. Priority Date: 08/31/2011
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Nomura, Katsuyuki
• Application Number:
  US13/600,880
• Publication Number:
  US 20130061088A1
• Time in Patent Office: Days
• US Class Current: 714/6.13
• CPC Class Codes: G06F 11/073 in a memory management context, e.g. virtual memory or cache management memory management G06F12/00; testing of static memory units G11C29/00
• CPC Class Codes: G06F 11/076 by exceeding a count or rate limit, e.g. word- or bit count limit
• CPC Class Codes: G11C 16/3418 Disturbance prevention or evaluation; Refreshing of disturbed memory data
• CPC Class Codes: G11C 29/883 using a single defective memory device with reduced capacity, e.g. half capacity

Abstract

An information storage device includes a semiconductor memory divided into storage regions and a management unit. The management unit manages the storage regions so that any storage region which caused read or write errors a predetermined threshold number of times, which may be two or more, is made unavailable for storing data.

Claims

1. An information storage device comprising:

a semiconductor memory; and

a management unit configured to keep track of a number of errors for each storage region of the semiconductor memory and to make unavailable a storage region having a tracked error number of two or more.

2. The information storage device according to claim 1, wherein the management unit increments a number of errors for a storage region when an error occurs in connection with a read from the storage region.

3. The information storage device according to claim 1, wherein

the management unit manages so that the storage region where the number of rounds when a write error takes place is 2 or more becomes a third prescribed number of rounds among the storage regions of the semiconductor memory and is excluded from use for storing the information.

4. The information storage device according to claim 1, wherein

the management unit manages so that the storage region having a number of rounds of generation of the read error that is smaller than the prescribed number of rounds, the storage region having a number of rounds with the error correction number over a prescribed number smaller than the second prescribed number of rounds, or the storage region having a number of rounds of the write error smaller than the third prescribed number of rounds is managed as the virtual excluding region that is temporarily excluded from use for storing the information;

and the storage region having a number of rounds of generation of the read error over the prescribed number of rounds, the storage region having a number of rounds with the error correction number over a prescribed number that is larger than a prescribed number becomes the second prescribed number of rounds, or the storage region having a number of rounds of the write error that become the third prescribed number of rounds is managed as the excluding region permanently excluded from use for storing the information.

5. The information storage device according to claim 1, wherein the management unit increments a number of errors for a storage region when an error correction is performed on data read from the storage region.

6. The information storage device according to claim 1, wherein the management unit is configured to track storage regions as fully available, unavailable, and provisionally available, the provisionally available storage regions having a number of errors that is greater than zero but less than a predetermined threshold value.

7. The information storage device according to claim 6, wherein the predetermined threshold value is two or more.

8. The information storage device according to claim 6, wherein the management unit is further configured to make available for use the storage region that is provisionally unavailable.

9. The information storage device according to claim 8, further comprising:

an erasing unit configured to erase data from the storage region that is provisionally unavailable, the erasing unit erasing data after the management unit makes the provisionally available storage region available for use.

10. A method of reading data from a storage region of a nonvolatile semiconductor memory in an information storage device, the method comprising the step of:

reading data from the storage region; and

when a read error occurs while reading data from the storage region, registering the storage region as a provisionally available storage region,

wherein the provisionally available storage region becomes an unavailable storage region when the number of read or write errors is greater than a predetermined threshold value.

11. The method according to claim 10, further comprising:

during registering the storage region as the provisionally unavailable storage region, incrementing an error number associated with the storage region.

12. The method according to claim 11, further comprising:

determining if the error number is equal to or greater than the predetermined threshold value; and

if the error number is equal to or greater than the predetermined threshold value, registering the storage region as an unavailable storage region.

13. The method according to claim 12, wherein the predetermined threshold value is equal to or greater than two.

14. The method according to claim 11, wherein the error number includes errors resulting from either a read from the storage region or a write to the storage region.

15. The method according to claim 10, wherein a read error occurs when an error correction is not possible for the data read from the storage region.

16. A method of writing data to a storage region of a nonvolatile semiconductor memory in an information storage device, the method comprising the steps of:

writing data to the storage region; and

when a write error occurs while writing data to the storage region, registering the storage region as a provisionally available storage region,

wherein the provisionally available storage region becomes an unavailable storage region when the number of read or write errors is greater than a predetermined threshold value.

17. The method according to claim 16, further comprising:

during registering the storage region as the provisionally unavailable storage region, incrementing an error number associated with the storage region.

18. The method according to claim 17, further comprising:

determining if the error number is equal to or greater than the predetermined threshold value; and

if the error number is equal to or greater than the predetermined threshold value, registering the storage region as an unavailable storage region.

19. The method according to claim 18, wherein the predetermined threshold value is equal to or greater than two.

20. The method according to claim 17, wherein the error number includes errors resulting from either a read from the storage region or a write to the storage region.