HIGH TEMPERATURE OPERATION SILICON CARBIDE GATE DRIVER

• US 20130063184A1
• Filed: 09/09/2010
• Published: 03/14/2013
• Est. Priority Date: 09/09/2010
• Status: Abandoned Application

• Current Assignee: Aegis Technologies, Inc. (Harvey Electronics, Inc.)
• Original Assignee: Aegis Technologies, Inc. (Harvey Electronics, Inc.)
• Inventors: Tan, Chunhu, Lin, Zhigang, Liang, Xiaoning
• Application Number:
  US12/878,931
• Publication Number:
  US 20130063184A1
• Time in Patent Office: Days
• US Class Current: 327/108
• CPC Class Codes: H01L 21/8213 the substrate being a semiconductor, using SiC technology H01L21/8258 takes precedence
• CPC Class Codes: H01L 27/098 the components being PN junction gate field-effect transistors
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/808 with a PN junction gate , e.g. PN homojunction gate H01L29/7725, H01L29/775, H01L29/778, H01L29/806 take precedence
• CPC Class Codes: H03K 17/08122 in field-effect transistor switches
• CPC Class Codes: H03K 17/691 using transformer coupling
• CPC Class Codes: H03K 2017/6875 using self-conductive, depletion FETs

Abstract

Versions of the present invention have many advantages, including operation under high temperatures, or high frequencies while providing the required current for switching a SiC VJFET, providing electrical isolation and minimizing dv/dt noise. One embodiment is a silicon carbide gate driver comprising a first group of silicon on insulator devices and passive components and a second group of silicon carbide devices. The first group may have equivalent temperatures of operation and equivalent frequencies of operation as the second group.

Claims

1. A silicon carbide gate driver comprising:

a) a first group of silicon on insulator devices and passive components; and

b) a second group of silicon carbide devices.

2. The silicon carbide gate driver of claim 1, wherein:

a) said first group has equivalent temperatures of operation and equivalent frequencies of operation as said second group.

3. The silicon carbide gate driver of claim 2, wherein:

a) a signal passes through said first group and then said signal passes through said second group.

4. The silicon, carbide gate driver of claim 3, wherein said passive components are selected from the group consisting of

a) resistors;

b) capacitors;

c) diodes; and

d) transformers.

5. The silicon carbide gate driver of claim 4, wherein said silicon carbide device is selected as a junction gate field-effect transistor.

6. The silicon carbide gate driver of claim 5, wherein said temperatures of operation is a range from −

70 degrees Celsius to 250 degrees Celsius.

7. The silicon carbide gate driver of claim 6, wherein said frequencies of operation is a range from 100 kilohertz to 500 kilohertz.

8. The silicon carbide gate driver of claim 7, wherein sink/source current ratings range from 1 to 25 Amperes.

9. A method of driving a gate of an output stage device comprising:

a) a first group of silicon on insulator devices and passive components;

b) a second group of silicon carbide devices; and

c) passing a signal through said first group and then passing said signal through said second group.

10. The method of claim 9, wherein

a) said first group has equivalent temperatures of operation and equivalent frequencies of operation as said second group.

11. The method of claim 10, wherein said silicon on insulator device is selected from the group consisting of

a) resistors;

b) capacitors;

c) diodes; and

d) transformers.

12. The method of claim 11, wherein said silicon carbide device is selected as a junction gate field-effect transistor.

13. The method of claim 12, wherein said temperatures of operation ranges from −

70 degrees Celsius to 250 degrees Celsius.

14. The method of claim 13, wherein said frequencies of operation ranges between 100 kilohertz to 500 kilohertz.

15. The method of claim 14, wherein sink/source current ratings range from 1 to 25 Amperes.