HIGH SPEED AMPLIFIER

• US 20130063210A1
• Filed: 09/09/2011
• Published: 03/14/2013
• Est. Priority Date: 09/09/2011
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Corsi, Marco, Wang Limketkai, Victoria L., Srinivasan, Venkatesh
• Granted Patent: US 8,576,007 B2
• Time in Patent Office: Days
• US Class Current: 330/253
• CPC Class Codes: H03F 1/223 with MOSFET's
• CPC Class Codes: H03F 2203/45562 the IC comprising a cross coupling circuit, e.g. comprising two cross-coupled transistors
• CPC Class Codes: H03F 2203/45644 the LC comprising a cross coupling circuit, e.g. comprising two cross-coupled transistors
• CPC Class Codes: H03F 3/45201 Non-folded cascode stages

Abstract

For high speed amplifiers, the parasitic capacitances from the differential input pair introduce a zero that can affect performance. Here, a neutralization network has been provided that compensates for this zero by shifting its position. This is generally accomplished by using a pair of capacitors that are cross-coupled across the differential input pair of the amplifier.

Claims

1. An apparatus comprising:

an amplifier that receives an input signal and that generates an output signal, wherein the amplifier includes;

a first transistor having a first passive electrode, a second passive electrode, and a control electrode, wherein the control electrode of the first transistor receives a first portion of the input signal; and

a second transistor having a first passive electrode, a second passive electrode, and a control electrode, wherein the control electrode of the second transistor receives a second portion of the input signal; and

a neutralization network having;

a first neutralization capacitor that is coupled between the control electrode of the first transistor and the second passive electrode of the second transistor; and

a second neutralization capacitor that is coupled between the control electrode of the second transistor and the second passive electrode of the first transistor.

2. The apparatus of claim 1, wherein the amplifier further comprises:

a first output terminal that is adapted to provide a first portion of the output signal;

a second output terminal that is adapted to provide a second portion of the output signal;

a first bias network that is coupled to the first passive electrode of each of the first and second transistors; and

a second bias network that is coupled to the second passive electrode of each of the first and second transistors.

3. The apparatus of claim 2, wherein the first and second transistors are MOS transistors, and wherein the first passive electrode, the second passive electrode, and the control electrode of each of the first and second transistors are the source, drain, and gate, respectively.

4. The apparatus of claim 3, wherein the first and second transistors further comprise first and second PMOS transistors, respectively.

5. The apparatus of claim 4, wherein the first bias network further comprises:

a third PMOS transistor that is coupled to the source of the first PMOS transistor at its drain; and

a fourth PMOS transistor that is coupled to the source of the second PMOS transistor at is drain and that is coupled to the gate of the third PMOS transistor at its gate.

6. The apparatus of claim 5, wherein the second bias network further comprises:

a fifth PMOS transistor that is coupled to the drain of the first PMOS transistor at its source; and

a sixth PMOS transistor that is coupled to the drain of the second PMOS transistor at is source and that is coupled to the gate of the fifth PMOS transistor at its gate.

7. The apparatus of claim 2, wherein the first and second transistors are bipolar transistors, and wherein the first passive electrode, the second passive electrode, and the control electrode of each of the first and second transistors are the collector, emitter, and base, respectively.

8. The apparatus of claim 7, wherein the first and second transistors further comprise first and second PNP transistors, respectively.

9. An apparatus comprising:

a amplifier that receives an input signal and that generates an output signal, wherein the amplifier includes;

a first transistor having a first passive electrode, a second passive electrode, and a control electrode, wherein the control electrode of the first transistor receives a first portion of the input signal;

a second transistor having a first passive electrode, a second passive electrode, and a control electrode, wherein the control electrode of the second transistor receives a second portion of the input signal; and

a plurality of bias networks that are coupled to at least one of the first passive electrode and the second passive electrode of each of the first and second transistors; and

a neutralization network having;

a first neutralization capacitor that is coupled between the control electrode of the first transistor and the second passive electrode of the second transistor; and

a second neutralization capacitor that is coupled between the control electrode of the second transistor and the second passive electrode of the first transistor.

10. The apparatus of claim 9, wherein the first and second transistors are MOS transistors, and wherein the first passive electrode, the second passive electrode, and the control electrode of each of the first and second transistors are the source, drain, and gate, respectively.

11. The apparatus of claim 10, wherein the first and second transistors further comprise first and second PMOS transistors, respectively.

12. The apparatus of claim 11, wherein the plurality of bias networks further comprises a first bias network, and wherein the first bias network further comprises:

a third PMOS transistor that is coupled to the source of the first PMOS transistor at its drain; and

a fourth PMOS transistor that is coupled to the source of the second PMOS transistor at is drain and that is coupled to the gate of the third PMOS transistor at its gate.

13. The apparatus of claim 12, wherein the plurality of bias networks further comprises a second bias network, and wherein the second bias network further comprises:

a fifth PMOS transistor that is coupled to the drain of the first PMOS transistor at its source; and

a sixth PMOS transistor that is coupled to the drain of the second PMOS transistor at is source and that is coupled to the gate of the fifth PMOS transistor at its gate.

14. The apparatus of claim 9, wherein the first and second transistors are bipolar transistors, and wherein the first passive electrode, the second passive electrode, and the control electrode of each of the first and second transistors are the collector, emitter, and base, respectively.

16. An apparatus comprising:

a first output terminal;

a second output terminal;

a first PMOS transistor;

a second PMOS transistor that is coupled to the first PMOS transistor at its gate, wherein the first and second PMOS transistors receive a first bias at their gates;

a third PMOS transistor that is coupled to the drain of the first PMOS transistor at its source and that receives a first portion of a differential input signal at its gate;

a fourth PMOS transistor that is coupled to the drain of the second PMOS transistor at its source and that receives a second portion of the differential input signal at its gate;

a fifth PMOS transistor that is coupled to the drain of the third PMOS transistor at its source and the first output terminal at its drain;

a sixth PMOS transistor that is coupled to the drain of the fourth PMOS transistor at its source, the second output terminal at its drain, and the gate of the fifth PMOS transistor at its gate, wherein the fifth and sixth PMOS transistors receive a second bias at their gates;

a first NMOS transistor that is coupled to the drain of the fifth PMOS transistor at its drain;

a second NMOS transistor that is coupled to the drain of the sixth PMOS transistor at its drain and the gate of the first NMOS transistor at its gate, wherein the first and second NMOS transistors receive a third bias at their gates;

a first neutralization capacitor that is coupled between the gate of the third PMOS transistor and the drain of the fourth PMOS transistor; and

a second neutralization capacitor that is coupled between the gate of the fourth PMOS transistor and the drain of the third PMOS transistor.

15. The apparatus of claim 16, wherein the first and second transistors further comprise first and second PNP transistors, respectively.

17. The apparatus of claim 16, wherein the first and second neutralization capacitors further comprise first and second MOS capacitors, respectively.

18. The apparatus of claim 17, wherein the apparatus has a parasitic zero at 20 GHz.

19. The apparatus of claim 18, wherein the capacitance of each of the first and second MOS capacitors is about 40 fF.