METHOD OF CLEANING ELECTRONIC MATERIAL AND CLEANING SYSTEM

• US 20130068260A1
• Filed: 03/02/2011
• Published: 03/21/2013
• Est. Priority Date: 03/15/2010
• Status: Abandoned Application

• Current Assignee: Kurita Water Industries Limited
• Original Assignee: Kurita Water Industries Limited
• Inventors: Tokoshima, Hiroto, Yamakawa, Haruyoshi
• Application Number:
  US13/634,567
• Publication Number:
  US 20130068260A1
• Time in Patent Office: Days
• US Class Current: 134/26
• CPC Class Codes: B08B 3/04 Cleaning involving contact with liquid
• CPC Class Codes: G03F 7/423 containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
• CPC Class Codes: H01L 21/31133 by chemical means
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles

Abstract

An electronic material cleaning system includes a chemical cleaning means, a wet cleaning means and a single-wafer cleaning apparatus. The chemical cleaning means comprises a functional chemical storage tank and an electrolytic reaction apparatus connected to the functional chemical storage tank via a concentrated sulfuric acid electrolysis line. The functional chemical storage tank can supply a functional chemical to the single-wafer cleaning apparatus via a functional chemical supply line. The wet cleaning means comprises a pure water supply line, a nitrogen gas supply line connected to a nitrogen gas source and an internal mixing type two-fluid nozzle connected respectively to the pure water supply line and the nitrogen gas supply line. Droplets generated from a nitrogen gas and ultrapure water can be sprayed from the tip of the two-fluid nozzle.

Claims

1. An electronic material cleaning method, comprising:

a chemical cleaning step for bringing a functional chemical obtained by electrolyzing sulfuric acid into contact with an electronic material; and

a wet cleaning step for bringing a jet flow of droplets generated from a gas and a liquid into contact with the electronic material.

2. The electronic material cleaning method according to claim 1, wherein the functional chemical brought to contact with the electronic material is collected, electrolyzed again and reused.

3. The electronic material cleaning method according to claim 1, wherein the functional chemical in a state of being heated to 100 to 200°

C. is brought to contact with the electronic material.

4. The electronic material cleaning method according to claim 1, wherein a sulfuric acid concentration in the functional chemical is 80 to 96 wt %.

5. The electronic material cleaning method according to claim 1, wherein:

at least an anode of electrodes used for electrolyzing the sulfuric acid is a conductive diamond electrode; and

the functional chemical contains persulfate generated by an oxidation reaction at the anode.

6. The electronic material cleaning method according to claim 1, wherein the jet flow of droplets generated from a gas and a liquid is generated from pure water and one kind of gas or a mixed gas of two or more kinds selected from nitrogen, oxygen, noble gas, cleaned air, carbon dioxide and ozone.

7. The electronic material cleaning method according to claim 1, wherein the electronic material is subjected to single-wafer cleaning in a state of being fixed to a rotation device.

15. The electronic material cleaning method according to claim 2, wherein the functional chemical in a state of being heated to 100 to 200°

C. is brought to contact with the electronic material.

16. The electronic material cleaning method according to claim 2, wherein a sulfuric acid concentration in the functional chemical is 80 to 96 wt %.

17. The electronic material cleaning method according to claim 2, wherein:

at least an anode of electrodes used for electrolyzing the sulfuric acid is a conductive diamond electrode; and

the functional chemical contains persulfate generated by an oxidation reaction at the anode.

18. The electronic material cleaning method according to claim 2, wherein the jet flow of droplets generated from a gas and a liquid is generated from pure water and one kind of gas or a mixed gas of two or more kinds selected from nitrogen, oxygen, noble gas, cleaned air, carbon dioxide and ozone.

19. The electronic material cleaning method according to claim 2, wherein the electronic material is subjected to single-wafer cleaning in a state of being fixed to a rotation device.

20. The electronic material cleaning method according to claim 3, wherein a sulfuric acid concentration in the functional chemical is 80 to 96 wt %.

8. An electronic material cleaning system, comprising:

a chemical cleaning means for bringing a functional chemical obtained by electrolyzing sulfuric acid into contact with an electronic material; and

a wet cleaning means for bringing a jet flow of droplets generated from a gas and a liquid into contact with the electronic material.

9. The electronic material cleaning system according to claim 8, comprising a collecting means for collecting the functional chemical brought to contact with the electronic material.

10. The electronic material cleaning system according to claim 8, comprising a heating device for heating the functional chemical.

11. The electronic material cleaning system according to claim 8, wherein the chemical cleaning means comprises an electrolytic reaction apparatus for producing a persulfuric acid-containing sulfuric acid solution by electrolyzing a sulfuric acid solution.

12. The electronic material cleaning system according to claim 8, wherein at least an anode of electrodes of the electrolytic reaction apparatus is a conductive diamond electrode.

13. The electronic material cleaning system according to claim 8, wherein the wet cleaning means comprises a two-fluid nozzle having a pure water supply line and an inert gas supply line.

14. The electronic material cleaning system according to claim 8, comprising a rotation device to which the electronic material can be fixed.