SEMICONDUCTOR DEVICE

• US 20130069151A1
• Filed: 03/19/2012
• Published: 03/21/2013
• Est. Priority Date: 09/21/2011
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: OHTA, TSUYOSHI, MISU, SHINICHIRO, ARAI, MASATOSHI
• Application Number:
  US13/424,347
• Publication Number:
  US 20130069151A1
• Time in Patent Office: Days
• US Class Current: 257/331
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/47 Schottky barrier electrodes H01L29/435 takes precedence
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence
• CPC Class Codes: H01L 29/8725 of the trench MOS barrier type [TMBS]

Abstract

According to one embodiment, a semiconductor device includes: a substrate; a first conductive portion extending in a first direction perpendicular to a major surface of the substrate; a second conductive portion extending in the first direction; a semiconductor portion provided between the first and the second conductive portions and including a first semiconductor region; a first electrode portion extending in the first direction between the first and the second conductive portions; a second electrode portion extending in the first direction between the first and the second conductive portions; a first insulting portion provided between the first electrode portion and the semiconductor portion and having a first thickness; and a second insulating portion provided between the second electrode portion and the semiconductor portion and having a second thickness greater than the first thickness.

Claims

1. A semiconductor device comprising:

a substrate;

a first conductive portion extending in a first direction perpendicular to a major surface of the substrate;

a second conductive portion extending in the first direction and provided to be separated from the first conductive portion along a second direction perpendicular to the first direction;

a semiconductor portion provided between the first conductive portion and the second conductive portion and including a first semiconductor region of a first impurity concentration and of a first conductive form;

a first electrode portion extending in the first direction between the first conductive portion and the second conductive portion;

a second electrode portion extending in the first direction between the first conductive portion and the second conductive portion and provided to be separated from the first electrode portion;

a first insulting portion provided between the first electrode portion and the semiconductor portion and having a first thickness in a normal direction of a boundary face of the first electrode portion; and

a second insulating portion provided between the second electrode portion and the semiconductor portion and having a second thickness greater than the first thickness in a normal direction of a boundary face of the second electrode portion.

2. The device according to claim 1, wherein the first electrode portion is provided along the second direction from midway through the first conductive portion to midway through the semiconductor portion.

3. The device according to claim 1, wherein the second thickness is gradually increased from the first conductive portion to the second conductive portion.

4. The device according to claim 1, wherein the second thickness is repeatedly increased and decreased from the first conductive portion to the second conductive portion.

5. The device according to claim 1, wherein the second electrode portion includes a plurality of electrode regions disposed to be separated from each other in the second direction.

6. The device according to claim 5, wherein the first insulting portion and the second insulating portion are provided to be separated from each other in the second direction, and the second electrode portions are provided to be separated from each other for each of the plurality of electrode regions.

7. The device according to claim 1, wherein, among the first thicknesses, a thickness along the first direction is greater than a thickness along the second direction.

8. The device according to claim 1, further comprising:

a third insulating portion provided between the first electrode portion and the first conductive portion and having a third thickness greater than the first thickness in a direction in which the boundary face of the first electrode portion and a boundary face of the first conductive portion face each other.

9. The device according to claim 1, wherein

the semiconductor portion includes a second semiconductor region of a second conductive form provided between the first conductive portion and the first semiconductor region, and

the first electrode portion and the first insulating portion penetrate the second conductor region along the second direction.

10. The device according to claim 9, wherein a length of the second electrode portion along the first direction is greater than a length of the first electrode portion along the first direction.

11. The device according to claim 1, wherein

the first electrode portion is in electrical conduction with the first conductive portion, and

the first conductive portion is Schottky-junctioned to the semiconductor portion.

12. The device according to claim 11, wherein the semiconductor portion includes, on a side of the first conductive portion of the semiconductor portion, a first concentration region of the first conductive form and of an impurity concentration lower than the first impurity concentration.

13. The device according to claim 11, wherein the semiconductor portion includes, on a side of the first conductive portion of the semiconductor portion, a second concentration region of the first conductive form and of an impurity concentration higher than the first impurity concentration.

14. The device according to claim 11, wherein the semiconductor portion includes a third concentration region of a second conductive form between the substrate and the first conductive portion on a side of the first conductive portion.

15. The device according to claim 11, wherein the semiconductor portion includes a fourth concentration region of the first conductive form and of an impurity concentration lower than the first impurity concentration between the substrate and the first conductive portion on a side of the first conductive portion.

16. The device according to claim 11, wherein the first electrode portion is provided to be separated from a boundary face between the first conductive portion and the semiconductor portion.

17. The device according to claim 1, wherein the first insulting portion and the second insulating portion are provided to be separated from each other in the second direction.

18. The device according to claim 17, wherein the first insulating portion is provided to be separated from the second insulating portion, and

a position of the first insulting portion along a third direction perpendicular to the first direction and the second direction is different from a position of the second insulting portion along the third direction.

19. The device according to claim 18, wherein, as viewed in the second direction, a part of the first insulating portion overlaps with a part of the second insulting portion.

20. The device according to claim 17, wherein

a plurality of the first electrode portions are provided in the third direction at a first pitch, and

a plurality of the second electrode portions are provided in the third direction at a second pitch greater than the first pitch.