Photovoltaic Device Including a CZTS Absorber Layer and Method of Manufacturing the Same
First Claim
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1. A photovoltaic device including a CZTS absorber layer, comprising:
- a substrate;
a bottom electrode;
an absorber layer, formed on the bottom electrode;
a buffer layer, formed on the absorber layer; and
a top electrode layer, formed on the buffer layer;
wherein the absorber layer includes a first region adjacent to the bottom electrode and a second region adjacent to the first region, both of the first region and the second region include a formula of Cua(Zn1-bSnb)(Se1-cSc)2, wherein 0<
a<
1, 0<
b<
1, 0≦
c≦
1 and a Zn/Sn ratio of the first region is higher than that of the second region.
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Abstract
A photovoltaic device including a CZTS absorber layer and method for manufacturing the same are disclosed. The photovoltaic device includes a substrate, a bottom electrode, an absorber layer formed on the bottom electrode, a buffer layer formed on the absorber layer and a top electrode layer formed on the buffer layer. The absorber layer includes a first region adjacent to the bottom electrode and a second region adjacent to the first region. Both of the first region and the second region include a formula of Cua(Zn1-bSnb)(Se1-cSc)2, wherein 0<a<1, 0<b<1, 0≦c≦1 and a Zn/Sn ratio of the first region is higher than that of the second region.
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Citations
20 Claims
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1. A photovoltaic device including a CZTS absorber layer, comprising:
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a substrate; a bottom electrode; an absorber layer, formed on the bottom electrode; a buffer layer, formed on the absorber layer; and a top electrode layer, formed on the buffer layer; wherein the absorber layer includes a first region adjacent to the bottom electrode and a second region adjacent to the first region, both of the first region and the second region include a formula of Cua(Zn1-bSnb)(Se1-cSc)2, wherein 0<
a<
1, 0<
b<
1, 0≦
c≦
1 and a Zn/Sn ratio of the first region is higher than that of the second region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a photovoltaic device including a CZTS absorber layer, comprising:
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forming a bottom electrode on a substrate; forming an absorber layer including a gradient composition region on the bottom electrode layer; forming a semiconductor layer on the absorber layer; and forming a top electrode layer on the semiconductor layer;
wherein the absorber layer includes a formula of Cua(Zn1-bSnb)(Se1-cSc)2, wherein 0<
a<
1, 0<
b<
1, 0≦
c≦
1, and the gradient composition region includes gradient Zn/Sn ratio and a higher Zn/Sn ratio at a side adjacent to the bottom electrode layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for manufacturing a photovoltaic device including a CZTS absorber layer, comprising:
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forming a bottom electrode on a substrate; coating a first CZTS precursor solution to form a first precursor layer on the bottom electrode layer; coating a second CZTS precursor solution to form a second precursor layer on the first precursor layer; heating the first precursor layer and the second precursor layer to form the CZTS absorber layer; forming a semiconductor layer on the CZTS absorber layer; and forming a top electrode layer on the semiconductor layer;
wherein the first CZTS precursor solution includes a higher Zn/Sn ratio than that of the second CZTS precursor solution. - View Dependent Claims (20)
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Specification