THIN FILM TRANSISTOR

• US 20130075717A1
• Filed: 12/01/2011
• Published: 03/28/2013
• Est. Priority Date: 09/23/2011
• Status: Abandoned Application

• Current Assignee: Hon Hai Precision Industry Co., Ltd.
• Original Assignee: Hon Hai Precision Industry Co., Ltd.
• Inventors: TSANG, JIAN-SHIHN
• Application Number:
  US13/308,549
• Publication Number:
  US 20130075717A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A thin film transistor for a semiconductor device is disclosed. The thin film transistor comprises a substrate; a channel region formed on the substrate, the channel region being made of a first oxide semiconductor material; a source region and a drain region formed on each of lateral sides of the channel region, the source region and the drain region being made of a second oxide semiconductor material, the second oxide semiconductor material having a band gap smaller than a band gap of the first oxide semiconductor material; a gate electrode formed on the channel region; and a gate insulating layer sandwiched between the gate electrode and the channel region.

Claims

1. A thin film transistor, comprising:

a substrate;

a channel region formed on the substrate, the channel region being made of a first oxide semiconductor material;

a source region and a drain region formed on each of lateral sides of the channel region, the source region and the drain region being made of a second oxide semiconductor material, the second oxide semiconductor material having a band gap smaller than a band gap of the first oxide semiconductor material;

a gate electrode formed on the channel region; and

a gate insulating layer sandwiched between the gate electrode and the channel region.

2. The thin film transistor of claim 1, wherein the first oxide semiconductor material is selected from a group consisting of IGZO, IZO, AZO, GZO, ITO, GTO, ATO, TiOx, and ZnO.

3. The thin film transistor of claim 1, wherein the second oxide semiconductor material is selected from a group consisting of IGZO, IZO, AZO, GZO, ITO, GTO, ATO, TiOx, and ZnO.

4. The thin film transistor of claim 1, wherein the first oxide semiconductor material and the second oxide semiconductor material are selected from IGZO, IZO, or ITO;

and the second oxide semiconductor material has a ratio of a number of indium (In) atoms to a total number of metal atoms higher than a ratio of a number of In atoms to a total number of metal atoms of the first oxide semiconductor material.

5. The thin film transistor of claim 1, wherein the first oxide semiconductor material and the second oxide semiconductor material are selected from AZO, or ATO;

and the second oxide semiconductor material has a ratio of a number of aluminum (Al) atoms to a total number of metal atoms higher than a ratio of a number of Al atoms to a total number of metal atoms of the first oxide semiconductor material.

6. The thin film transistor of claim 1, wherein a source electrode is formed on an upper surface of the source region;

and a drain electrode is formed on an upper surface of the drain region.

7. A thin film transistor, comprising:

a substrate;

a channel region formed on the substrate, the channel region being made of a first oxide semiconductor material;

a source region and a drain region formed on the substrate;

wherein the source regions and the drain region are electrically connected to the channel region;

the source region and the drain region are made of a second oxide semiconductor material; and

the second oxide semiconductor material has a band gap smaller than a band gap of the first oxide semiconductor material; and

a gate electrode electrically connected to the channel region, and is spaced from the source region and the drain region.

8. The thin film transistor of claim 7, wherein the first oxide semiconductor material is selected from a group consisting of IGZO, IZO, AZO, GZO, ITO, GTO, ATO, TiOx, and ZnO.

9. The thin film transistor of claim 7, wherein the second oxide semiconductor material is selected from a group consisting of IGZO, IZO, AZO, GZO, ITO, GTO, ATO, TiOx, and ZnO.

10. The thin film transistor of claim 7, wherein the first oxide semiconductor material and the second oxide semiconductor material are selected from IGZO, IZO, or ITO;

and the second oxide semiconductor material has a ratio of a number of indium (In) atoms to a total number of metal atoms higher than a ration of a number of In atoms to a total number of metal atoms of the first oxide semiconductor material.

11. The thin film transistor of claim 7, wherein the first oxide semiconductor material and the second oxide semiconductor material are selected from AZO, or ATO;

and the second oxide semiconductor material has a ratio of a number aluminum (Al) atoms to a total number of metal atoms higher than a ratio of a number of Al atoms to a total number of metal atoms of the first oxide semiconductor material.

12. The thin film transistor of claim 7, wherein a source electrode is formed on an upper surface of the source region;

and a drain electrode is formed on an upper surface of the drain region.

13. The thin film transistor of claim 7, wherein the gate electrode is formed between the substrate and the channel region.

14. The thin film transistor of claim 13, further comprising an adhesive layer formed between and interconnecting the substrate and the gate electrode;

and a gate insulating layer formed between the gate electrode and the channel region, the gate insulating layer electrically insulate the gate electrode from the source region and the drain region.

15. The thin film transistor of claim 14, further comprising an etch stop layer formed on an upper surface of the channel region, facing away from the gate insulating layer;

the source region and the drain region overlapping on parts of an upper surface of the etch stop layer.

16. The thin film transistor of claim 7, further comprising a gate insulating layer formed between and interconnecting the channel region and the gate electrode;

wherein the channel region directly contacts the substrate, and the gate electrode is formed on the channel region with the gate insulating layer between the channel region and the gate electrode.

17. A thin film transistor, comprising:

a substrate;

a channel region formed on the substrate, the channel region being made of a first oxide semiconductor material; and

a source region and a drain region formed on each of lateral sides of the channel region, the source region and the drain region being made of a second oxide semiconductor material, the second oxide semiconductor material having a concentration of carriers greater than a concentration of carriers of the first oxide semiconductor material.

18. The thin film transistor of claim 17, wherein the first oxide semiconductor material and the second oxide semiconductor material are selected from IGZO, IZO, or ITO;

and the second semiconductor material has a ratio of a number of indium (In) atoms to a total number of metal atoms higher than a ratio of a number of In atoms to a total number of metal atoms of the first oxide semiconductor material.

19. The thin film transistor of claim 17, wherein the first oxide semiconductor material and the second oxide semiconductor material are selected from AZO, or ATO;

and the second semiconductor material has a ratio of a number of aluminum (Al) atoms to a total number of metal atoms higher than a ratio of a number of Al atoms to a total number of metal atoms of the first oxide semiconductor material.