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SEMICONDUCTOR DEVICE

  • US 20130075722A1
  • Filed: 09/13/2012
  • Published: 03/28/2013
  • Est. Priority Date: 09/23/2011
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor layer provided over a substrate comprising an insulating surface;

    a first conductive layer provided partly over the oxide semiconductor layer;

    a second conductive layer provided partly over the first conductive layer;

    a gate insulating layer provided over the oxide semiconductor layer, the first conductive layer, and the second conductive layer; and

    a gate electrode layer provided over the oxide semiconductor layer with the gate insulating layer provided therebetween,wherein the gate electrode layer is overlapped with the first conductive layer with the gate insulating layer provided therebetween, and is not overlapped with the second conductive layer with the gate insulating layer provided therebetween.

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