ROW DRIVER CIRCUIT FOR NAND MEMORIES INCLUDING A DECOUPLING INVERTER
First Claim
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1. A device for driving appropriate voltages to a memory array, the device comprising:
- a reference potential node supplied with a reference potential;
first, second, third and fourth nodes;
a first transistor having a source-drain path coupled between the first and second nodes and a gate coupled to the third node;
a second transistor having a source-drain path coupled between the first and third nodes and a gate coupled to the second node;
a third transistor having a source-drain path coupled between the third node and the reference potential node and a gate coupled to the second node;
a fourth transistor having a source-drain path coupled between the first and fourth nodes and a gate coupled to the second node; and
a fifth transistor having a source-drain path coupled between the fourth node and the reference potential node and a gate coupled to the second node.
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Abstract
Devices and circuits for row driver architectures that can improve an existing row driver circuit including a boosting capacitor and a level shifter circuit. For example, the improvement can include a decoupling inverter that decouples the level shifter from the boosting capacitor, which can reduce the time for the row driver to turn on and drive appropriate voltages to the matrix array.
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Citations
19 Claims
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1. A device for driving appropriate voltages to a memory array, the device comprising:
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a reference potential node supplied with a reference potential; first, second, third and fourth nodes; a first transistor having a source-drain path coupled between the first and second nodes and a gate coupled to the third node; a second transistor having a source-drain path coupled between the first and third nodes and a gate coupled to the second node; a third transistor having a source-drain path coupled between the third node and the reference potential node and a gate coupled to the second node; a fourth transistor having a source-drain path coupled between the first and fourth nodes and a gate coupled to the second node; and a fifth transistor having a source-drain path coupled between the fourth node and the reference potential node and a gate coupled to the second node. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A device comprising:
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a non-volatile memory cell coupled to a word line; and a word line driver driving the word line to a selection level, the word line driver comprising; a reference potential node supplied with a reference potential; first, second, third and fourth nodes; a first transistor having a source-drain path coupled between the first and second nodes and a gate coupled to the third node; a second transistor having a source-drain path coupled between the first and third nodes and a gate coupled to the second node; a third transistor having a source-drain path coupled between the third node and the reference potential node and a gate coupled to the second node; a fourth transistor having a source-drain path coupled between the first and fourth nodes and a gate coupled to the second node; a fifth transistor having a source-drain path coupled between the fourth node and the reference potential node and a gate coupled to the second node; a capacitor having a first end coupled to the fourth node and a second end supplied with a boosting signal; a voltage line supplied with the selection level; and a sixth transistor having a source-drain path coupled between the word line and the voltage line and a gate coupled to the first end of the capacitor. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification