Metal-Aluminum Alloy Films From Metal Amidinate Precursors And Aluminum Precursors

• US 20130078454A1
• Filed: 09/14/2012
• Published: 03/28/2013
• Est. Priority Date: 09/23/2011
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Thompson, David, Anthis, Jeffrey W.
• Application Number:
  US13/616,903
• Publication Number:
  US 20130078454A1
• Time in Patent Office: Days
• US Class Current: 428/336
• CPC Class Codes: C22C 21/00 Alloys based on aluminium
• CPC Class Codes: C23C 16/32 Carbides
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

Described are methods for deposition of metal-aluminum films using metal amidinate precursors and aluminum precursors. Such metal-aluminum films can include metal aluminum carbide, metal aluminum nitride and metal aluminum carbonitride films. The aluminum precursors may be alkyl aluminum precursors or amine alanes.

Claims

1. A method of depositing a metal-aluminum layer, the method comprising:

exposing a substrate surface to pulses of an amidinate precursor and an aluminum precursor to form a metal-aluminum layer on the substrate surface, wherein the amidinate precursor comprises a p or f-block metal and the aluminum precursor comprises an alkyl aluminum precursor or an amine alane, and with the proviso that the substrate surface is not exposed to an oxidant during formation of the metal-aluminum layer.

2. The method of claim 1, wherein the substrate surface is exposed to the pulses sequentially, simultaneously, or substantially simultaneously.

3. The method of claim 1, wherein the metal amidinate precursor comprises an f-block metal.

4. The method of claim 1, further comprising exposing the substrate surface to a second metal amidinate precursor comprising a second p or f-block metal.

5. The method of claim 1, wherein the metal-aluminum layer comprises a metal aluminum carbide layer, a metal aluminum nitride layer, or a metal aluminum carbonitride layer.

6. The method of claim 1, wherein the metal-aluminum layer is less than 5 weight % oxygen.

7. The method of claim 1, wherein the substrate is heated to a temperature of about 100°

C. to about 500°

C.

8. The method of claim 1, wherein the metal amidinate precursor has a structure represented by:

9. The method of claim 8, wherein one or more L'"'"'s is an amidinate ligand.

10. The method of claim 8, wherein the metal amidinate precursor comprises lanthanum tris(N,N′

-diisopropylformamidinate).

11. The method of claim 1, wherein the aluminum precursor comprises an alkyl aluminum precursor having a structure represented by:

12. The method of claim 11, wherein R₁, R₂ and R₃ are the same.

13. The method of claim 11, wherein the alkyl aluminum precursor comprises one or more of trimethyl aluminum, triethyl aluminum and dimethylaluminumhydride.

14. The method of claim 13, wherein the alkyl aluminum precursor comprises trimethyl aluminum.

15. The method of claim 1, wherein the aluminum precursor comprises alane coordinated to a tertiary amine having a molecular weight less than or equal to 250 g/mol.

18. A metal-aluminum layer deposited by the method of claim 1.

19. The metal-aluminum layer of claim 18, wherein the metal-aluminum layer has a thickness in the range from about 1 to about 10 nm.

20. The metal-aluminum layer of claim 18, wherein the metal-aluminum layer is less than 5 weight % oxygen.

16. A method of depositing a metal-aluminum layer by atomic layer deposition, the method comprising:

sequentially exposing a substrate surface to alternating pulses of a metal amidinate precursor and an aluminum precursor to form a metal-aluminum layer on the substrate surface, with the proviso that the substrate surface is not exposed to an oxidant during formation of the metal-aluminum layer,

wherein the metal amidinate precursor has a structure represented by;

17. The method of claim 16, wherein the metal amidinate precursor comprises lanthanum tris(N,N′

-diisopropylformamidinate) and the aluminum precursor comprises trimethyl aluminum.