METHOD FOR FORMING DIFFUSION REGIONS IN A SILICON SUBSTRATE
First Claim
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1. ) A method of manufacturing solar cells, the method comprising:
- depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source;
forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material; and
heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.
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Abstract
A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.
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Citations
28 Claims
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1. ) A method of manufacturing solar cells, the method comprising:
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depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source; forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material; and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. ) A method of manufacturing solar cells, the method comprising:
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depositing a dopant material on a silicon substrate having a photovoltaic solar cell structure; forming a cross-linked matrix in the dopant material using a non-thermal exposure of the dopant material to ultraviolet light through a photo-polymerization process; and heating the silicon substrate of the dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. ) A method of manufacturing solar cells, the method comprising:
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forming a thin dielectric layer on a surface of a silicon substrate; forming a polysilicon layer over the thin dielectric layer; depositing an etch-resistant dopant material comprising a dopant source material on the polysilicon layer; forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material; and heating the etch-resistant dopant material to a temperature wherein the dopant source material diffuses into the polysilicon layer. - View Dependent Claims (26, 27, 28)
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Specification