Graphene on Semiconductor Detector
First Claim
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1. A detector apparatus, comprising:
- a semiconductor structure with a first surface;
a graphene layer disposed over at least a portion of the first surface of the semiconductor structure and having an upper surface with a first portion configured to collect photogenerated carriers and to establish a potential on the first surface of the semiconductor structure;
a first contact structure electrically connected to the semiconductor structure; and
a second contact structure electrically connected to a second portion of the upper surface of the graphene layer.
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Abstract
Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.
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Citations
31 Claims
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1. A detector apparatus, comprising:
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a semiconductor structure with a first surface; a graphene layer disposed over at least a portion of the first surface of the semiconductor structure and having an upper surface with a first portion configured to collect photogenerated carriers and to establish a potential on the first surface of the semiconductor structure; a first contact structure electrically connected to the semiconductor structure; and a second contact structure electrically connected to a second portion of the upper surface of the graphene layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method of making a detector, the method comprising:
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forming a graphene layer over a first surface of a semiconductor structure to a thickness of about 3.0 nm or less, the graphene layer comprising first and second portions; forming a first contact structure electrically connected to the semiconductor structure; and forming a second contact structure on the second portion of the upper surface of the graphene layer.
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25. An active pixel sensor apparatus, comprising:
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a semiconductor structure with a first surface; at least one pixel detector, comprising a graphene layer disposed over at least a portion of the first surface of the semiconductor structure, the graphene layer including a sensing surface configured to collect photogenerated carriers and adapted to establish a potential at the first surface of the semiconductor structure; a transfer transistor including; a source formed in the semiconductor structure, a control gate, and a drain electrically coupled with a readout circuit operative to read data from the at least one pixel detector using the control gate; and a reset transistor formed in the semiconductor structure and operative to selectively remove charge from the at least one pixel detector. - View Dependent Claims (26, 27, 28, 29)
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30. A charge coupled device (CCD), comprising:
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a semiconductor structure with a first surface; at least one pixel detector, comprising a graphene layer disposed over at least a portion of the first surface of the semiconductor structure, the graphene layer including a sensing surface facing a backside of the CCD; a transfer transistor including a source formed in the semiconductor structure, and a drain electrically coupled with a readout circuit operative to read data from the at least one pixel detector. - View Dependent Claims (31)
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Specification