SEMICONDUCTOR DEVICE AND DISPLAY DEVICE EQUIPPED WITH SAME
First Claim
1. A semiconductor device, comprising:
- a substrate;
a thin film diode supported by the substrate and having a first semiconductor layer that includes a light-receiving region;
a thin film transistor supported by the substrate and having a second semiconductor layer; and
a metal layer having an inclined surface that is inclined relative to a surface of the substrate,wherein the thin film diode can detect light of a prescribed wavelength incident upon the light-receiving region,wherein the first semiconductor layer and the second semiconductor layer are formed of a same semiconductor film, andwherein at least a portion of a side face of the first semiconductor layer faces the inclined surface of the metal layer.
1 Assignment
0 Petitions
Accused Products
Abstract
Disclosed is a semiconductor device 1000 including a substrate 1, a thin film diode 100 that is supported by the substrate 1 and has a first semiconductor layer 10 having a light-receiving region 10i, a thin film transistor 200 that is supported by the substrate 1 and has a second semiconductor layer 20, and a metal layer 22a that has an inclined surface 23 that is inclined to the surface of the substrate 1, in which the thin film diode 100 can detect light that enters the light-receiving region 10i and has a prescribed wavelength, in which both the first semiconductor layer 10 and the second semiconductor layer 20 are composed of the same semiconductor film, and in which the inclined surface 23 of the metal layer 22a faces at least a part of the side faces 3R and 3L of the first semiconductor layer 10. This constitution enables an increase in the amount of light absorbed by the thin film diode and an improvement in the effective light reception sensitivity of an optical sensor part.
15 Citations
14 Claims
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1. A semiconductor device, comprising:
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a substrate; a thin film diode supported by the substrate and having a first semiconductor layer that includes a light-receiving region; a thin film transistor supported by the substrate and having a second semiconductor layer; and a metal layer having an inclined surface that is inclined relative to a surface of the substrate, wherein the thin film diode can detect light of a prescribed wavelength incident upon the light-receiving region, wherein the first semiconductor layer and the second semiconductor layer are formed of a same semiconductor film, and wherein at least a portion of a side face of the first semiconductor layer faces the inclined surface of the metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification