High Throughput Thin Film Characterization And Defect Detection
First Claim
1. A method comprising:
- receiving a spectral response of an unfinished, multi-layer semiconductor wafer across a first spectral range;
determining an optical dispersion metric of a first layer of the multi-layer semiconductor wafer based at least in part on the spectral response;
determining a band structure characteristic indicative of an electrical performance of the first layer of the multi-layer semiconductor wafer based at least in part on the dispersion metric of the multi-layer semiconductor wafer across a second spectral range within the first spectral range; and
determining an estimate of the electrical performance of the multi-layer semiconductor wafer based at least in part on the band structure characteristic.
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Abstract
Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.
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Citations
21 Claims
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1. A method comprising:
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receiving a spectral response of an unfinished, multi-layer semiconductor wafer across a first spectral range; determining an optical dispersion metric of a first layer of the multi-layer semiconductor wafer based at least in part on the spectral response; determining a band structure characteristic indicative of an electrical performance of the first layer of the multi-layer semiconductor wafer based at least in part on the dispersion metric of the multi-layer semiconductor wafer across a second spectral range within the first spectral range; and determining an estimate of the electrical performance of the multi-layer semiconductor wafer based at least in part on the band structure characteristic. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A non-transitory, computer-readable medium, comprising:
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code for causing a computer to receive a spectral response of an unfinished, multi-layer semiconductor wafer across a first spectral range; code for causing the computer to determine an optical dispersion metric of a first layer of the multi-layer semiconductor wafer based at least in part on the spectral response; code for causing the computer to determine a band structure characteristic indicative of an electrical performance of the first layer of the multi-layer semiconductor wafer based at least in part on the dispersion metric of the multi-layer semiconductor wafer across a second spectral range within the first spectral range; and code for causing the computer to determine an estimate of the electrical performance of the multi-layer semiconductor wafer based at least in part on the band structure characteristic. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A system comprising:
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an illuminator; a spectrometer; and one or more computer systems configured to; receive a spectral response of an unfinished, multi-layer semiconductor wafer across a first spectral range; determine an optical dispersion metric of a first layer of the multi-layer semiconductor wafer based at least in part on the spectral response; determine a band structure characteristic indicative of an electrical performance of the first layer of the multi-layer semiconductor wafer based at least in part on the dispersion metric of the multi-layer semiconductor wafer across a second spectral range within the first spectral range; and determine an estimate of the electrical performance of the multi-layer semiconductor wafer based at least in part on the band structure characteristic. - View Dependent Claims (17, 18, 19, 20, 21)
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Specification