Plasma-Tuning Rods in Surface Wave Antenna (SWA) Sources

• US 20130084706A1
• Filed: 09/30/2011
• Published: 04/04/2013
• Est. Priority Date: 09/30/2011
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Zhao, Jianping, Chen, Lee, Funk, Merritt, Iwao, Toshihiko, Ventzek, Peter L.G.
• Application Number:
  US13/249,418
• Publication Number:
  US 20130084706A1
• Time in Patent Office: Days
• US Class Current: 438/710
• CPC Class Codes: H01J 37/3222 Antennas
• CPC Class Codes: H01J 37/32256 Tuning means
• CPC Class Codes: H01J 37/32293 using particular waveforms, e.g. polarised waves

Abstract

The invention provides a plurality of Surface Wave Antenna (SWA) plasma sources. The SWA plasma sources can comprise one or more non-circular slot antennas, each having a plurality of plasma-tuning rods extending therethrough. Some of the plasma tuning rods can be configured to couple the electromagnetic (EM) energy from one or more of the non-circular slot antennas to the process space within the process chamber. The invention also provides SWA plasma sources that can comprise a plurality of resonant cavities, each having one or more plasma-tuning rods extending therefrom. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber.

Claims

1. A Surface Wave Antenna (SWA) processing system for processing a substrate comprising:

a process chamber comprising a process space having a movable substrate holder therein;

a SWA plasma source coupled to the process chamber, wherein the SWA plasma source comprises a non-circular slot antenna and a non-circular resonator plate coupled to the non-circular slot antenna;

a plurality of protection assemblies coupled to the non-circular resonator plate, each protection assembly extending a first distance into the process space;

a plurality of positioning subsystems coupled to at least one mounting structure;

a plurality of tuning assemblies extending through the non-circular slot antenna, extending through the non-circular resonator plate, and extending into the plurality of protection assemblies, wherein each tuning assembly has a tuning space therein that extends a second distance into the process space;

a plurality of plasma-tuning rods coupled to the positioning subsystems, wherein at least one plasma-tuning rod is coupled to a separate positioning subsystem and is configured within a separate tuning space, the separate positioning subsystem being configured to move each plasma-tuning rod within the separate tuning space, the plasma-tuning rods extending third distances into the process space; and

a controller coupled to the tuning assemblies and configured to control the third distances, thereby controlling plasma uniformity in the process space.

2. The SWA processing system of claim 1, further comprising:

a tuner network/isolator coupled to the non-circular slot antenna;

a match network/phase shifter coupled to the tuner network/isolator; and

an electromagnetic (EM) source coupled to the match network/phase shifter, wherein the EM source is configured to operate in a frequency range from 500 MHz to 5000 MHz.

3. The SWA processing system of claim 1, wherein the protection assemblies are configured as extensions of the non-circular resonator plate and extend through holes in a cover plate coupled to the non-circular resonator plate.

4. The SWA processing system of claim 1, further comprising:

a first gas supply system coupled to one or more first flow elements coupled to the process chamber, wherein the first flow elements are configured to introduce a first process gas to the process space.

5. The SWA processing system of claim 4, wherein the first process gas comprises one or more of C₄F₈, C₅F₈, C₃F₆, C₄F₆, CF₄, CHF₃, CH₂F₂, an inert gas, oxygen, CO, and CO₂.

6. The SWA processing system of claim 4, wherein the first process gas comprises one or more of HBr, Cl₂, NF₃, SF₆, CHF₃, CH₂F₂, an inert gas, oxygen, CO, and CO₂.

7. The SWA processing system of claim 2, further comprising:

a first resonant cavity coupled to a first chamber wall, wherein a first coupling region is established at a first coupling distance from at least one wall of the first resonant cavity, and a first portion of a first additional plasma-tuning rod extends into the first coupling region at a first additional location;

a first isolation assembly coupled through the first chamber wall and coupled to the first additional plasma-tuning rod;

a first protection assembly coupled to the first isolation assembly, wherein a second portion of the first additional plasma-tuning rod extends into a first additional isolated tuning space established in the first protection assembly at the first additional location in the process space;

a second resonant cavity coupled to a second chamber wall, wherein a second coupling region is established at a second coupling distance from at least one wall of the second resonant cavity, and the first portion of a second additional plasma-tuning rod extends into the second coupling region at a second additional location;

a second isolation assembly coupled through the second chamber wall and coupled to the second additional plasma-tuning rod;

a second protection assembly coupled to the second isolation assembly, wherein a second portion of the second additional plasma-tuning rod extends into a second additional isolated tuning space established in the second protection assembly at the second additional location in the process space;

a first matching network coupled to the tuner network/isolator and the first resonant cavity, the first matching network being configured to provide first additional EM energy to the first resonant cavity; and

a second matching network coupled to the tuner network/isolator and the second resonant cavity, the second matching network being configured to provide second additional EM energy to the second resonant cavity.

8. The SWA processing system of claim 7, further comprising:

a first control assembly coupled through at least one first cavity wall;

a first tuning slab coupled to the first control assembly and configured to move the first tuning slab a first cavity-tuning distance relative to the first portion of the first additional plasma-tuning rod within the first resonant cavity, thereby optimizing a first additional plasma-tuning energy coupled from the first coupling region to the second portion of the first additional plasma-tuning rod;

a second control assembly coupled through at least one second cavity wall; and

a second tuning slab coupled to the second control assembly and configured to move the second tuning slab a second cavity-tuning distance relative to the first portion of the second additional plasma-tuning rod within the second resonant cavity, thereby optimizing a second additional plasma-tuning energy coupled from the second coupling region to the second portion of the second additional plasma-tuning rod.

9. A Surface Wave Antenna (SWA) processing system for processing a substrate comprising:

a process chamber comprising a process space having a movable substrate holder therein;

a SWA plasma source coupled to the process chamber, wherein the SWA plasma source comprises a non-circular slot antenna and a non-circular resonator plate coupled to the non-circular slot antenna;

a first resonant cavity coupled to a first chamber wall, wherein a first coupling region is established at a first coupling distance from at least one wall of the first resonant cavity, and a first portion of a first plasma-tuning rod extends into the first coupling region at a first location;

a first isolation assembly coupled through the first chamber wall and coupled to the first plasma-tuning rod;

a first protection assembly coupled to the first isolation assembly, wherein a second portion of the first plasma-tuning rod extends into a first isolated tuning space established in the first protection assembly at the first location in the process space;

a second resonant cavity coupled to a second chamber wall, wherein a second coupling region is established at a second coupling distance from at least one wall of the second resonant cavity, and the first portion of a second plasma-tuning rod extends into the second coupling region at a second location;

a second isolation assembly coupled through the second chamber wall and coupled to the second plasma-tuning rod;

a second protection assembly coupled to the second isolation assembly, wherein a second portion of the second plasma-tuning rod extends into a second additional isolated tuning space established in the second protection assembly at the second location in the process space;

an electromagnetic (EM) source;

a first matching network coupled to the EM source and the first resonant cavity, the first matching network being configured to provide first EM energy to the first resonant cavity;

a second matching network coupled to the EM source and the second resonant cavity, the second matching network being configured to provide second EM energy to the second resonant cavity, wherein the EM source is configured to operate in a frequency range from 500 MHz to 5000 MHz; and

.

a controller coupled to the first resonant cavity, the second resonant cavity, and the EM source, the controller being configured to control plasma uniformity in the process space.

10. The SWA processing system of claim 9, further comprising:

a first control assembly coupled through at least one first cavity wall, wherein the controller is coupled to the first control assembly;

a first tuning slab coupled to the first control assembly that is configured to move the first tuning slab a first cavity-tuning distance relative to the first portion of the first plasma-tuning rod within the first resonant cavity, thereby optimizing a first plasma-tuning energy coupled from the first coupling region to the second portion of the first plasma-tuning rod;

a second control assembly coupled through at least one second cavity wall, wherein the controller is coupled to the second control assembly; and

a second tuning slab coupled to the second control assembly that is configured to move the second tuning slab a second cavity-tuning distance relative to the first portion of the second plasma-tuning rod within the second resonant cavity, thereby optimizing a second plasma-tuning energy coupled from the second coupling region to the second portion of the second plasma-tuning rod.

11. A method of processing a substrate using a Surface Wave Antenna (SWA) processing system comprising:

positioning a substrate on a movable substrate holder within a process space in a rectangular process chamber;

positioning a plurality of movable plasma-tuning rods through a rectangular SWA into the rectangular process chamber coupled to the rectangular SWA;

providing process gas to the rectangular process chamber;

creating a uniform plasma by applying electromagnetic (EM) energies to the rectangular SWA and to the movable plasma-tuning rods using an EM source; and

processing the substrate by moving the substrate through the uniform plasma.

12. The method of claim 11, wherein positioning the movable plasma-tuning rods further comprises:

establishing the SWA using a rectangular slot antenna and a rectangular resonator plate coupled to the rectangular slot antenna, wherein a plurality of protection assemblies are configured as extensions of the rectangular resonator plate, each protection assembly extending a first distance into the process space;

establishing at least one mounting structure having a plurality of positioning subsystems coupled thereto;

positioning a plurality of tuning assemblies, each tuning assembly extending through the rectangular slot antenna, extending through the rectangular resonator plate and extending into the protection assemblies, wherein the tuning assembly has a tuning space therein that extends a second distance into the process space; and

positioning the movable plasma-tuning rods using the positioning subsystems, wherein each movable plasma-tuning rod is coupled to a separate positioning subsystem and is configured within a separate tuning space, the separate positioning subsystem being configured to move the movable plasma-tuning rod within the separate tuning space, the movable plasma-tuning rods extending third distances into the process space.

13. The method of claim 11, wherein providing the process gas further comprises:

coupling a gas supply system to the rectangular process chamber using one or more flow elements coupled to the rectangular process chamber, wherein the flow elements are configured to introduce the process gas to the process space.

14. The method of claim 13, wherein the process gas comprises one or more of C₄F₈, C₅F₈, C₃F₆, C₄F₆, CF₄, CHF₃, CH₂F₂, an inert gas, oxygen, CO, and CO₂.

15. The method of claim 13, wherein the process gas comprises one or more of HBr, Cl₂, NF₃, SF₆, CHF₃, CH₂F₂, an inert gas, oxygen, CO, and CO₂.

16. The method of claim 11, further comprising:

coupling a first resonant cavity to a first chamber wall, wherein a first coupling region is established at a first coupling distance from at least one wall of the first resonant cavity, and a first portion of a first plasma-tuning rod extends into the first coupling region at a first location;

configuring a first isolation assembly, wherein the first isolation assembly is coupled through the first chamber wall and is coupled to the first plasma-tuning rod;

coupling a first protection assembly to the first isolation assembly, wherein a second portion of the first plasma-tuning rod extends into a first isolated tuning space established in the first protection assembly at the first location in the process space;

coupling a second resonant cavity to a second chamber wall, wherein a second coupling region is established at a second coupling distance from at least one wall of the second resonant cavity, and the first portion of a second plasma-tuning rod extends into the second coupling region at a second location;

configuring a second isolation assembly, wherein the second isolation assembly is coupled through the second chamber wall and is coupled to the second plasma-tuning rod;

coupling a second protection assembly to the second isolation assembly, wherein a second portion of the second plasma-tuning rod extends into a second additional isolated tuning space established in the second protection assembly at the second location in the process space;

coupling a first matching network to the EM source and the first resonant cavity, the first matching network being configured to provide first EM energy to the first resonant cavity;

coupling a second matching network to the EM source and the second resonant cavity, the second matching network being configured to provide second EM energy to the second resonant cavity, wherein the EM source is configured to operate in a frequency range from 500 MHz to 5000 MHz; and

controlling the first EM energy, the second EM energy, and the EM source to maintain plasma uniformity in the process space in real-time.

17. The method of claim 16, further comprising:

coupling a first control assembly through at least one first cavity wall, wherein a controller is coupled to the first control assembly;

coupling a first tuning slab to the first control assembly that is configured to move the first tuning slab a first cavity-tuning distance relative to the first portion of the first plasma-tuning rod within the first resonant cavity, thereby optimizing a first plasma-tuning energy coupled from the first coupling region to the second portion of the first plasma-tuning rod;

coupling a second control assembly through at least one second cavity wall, wherein the controller is coupled to the second control assembly; and

coupling a second tuning slab to the second control assembly that is configured to move the second tuning slab a second cavity-tuning distance relative to the first portion of the second plasma-tuning rod within the second resonant cavity, thereby optimizing a second plasma-tuning energy coupled from the second coupling region to the second portion of the second plasma-tuning rod.

18. A method of processing a substrate using a Surface Wave Antenna (SWA) processing system comprising:

positioning a substrate on a movable substrate holder within a process space in a rectangular process chamber, wherein a rectangular SWA is coupled to the rectangular process chamber;

positioning a plurality of movable plasma-tuning rods through a plurality of chamber walls and into the process space in the rectangular process chamber;

providing process gas to the rectangular process chamber;

creating a uniform plasma by applying electromagnetic (EM) energies to the rectangular SWA and to the movable plasma-tuning rods using an EM source; and

processing the substrate by moving the substrate through the uniform plasma.

19. The method of claim 18, further comprising:

coupling a first resonant cavity to a first chamber wall, wherein a first coupling region is established at a first coupling distance from at least one wall of the first resonant cavity, and a first portion of a first plasma-tuning rod extends into the first coupling region at a first location;

configuring a first isolation assembly, wherein the first isolation assembly is coupled through the first chamber wall and is coupled to the first plasma-tuning rod;

coupling a first protection assembly to the first isolation assembly, wherein a second portion of the first plasma-tuning rod extends into a first isolated tuning space established in the first protection assembly at the first location in the process space;

coupling a second resonant cavity to a second chamber wall, wherein a second coupling region is established at a second coupling distance from at least one wall of the second resonant cavity, and the first portion of a second plasma-tuning rod extends into the second coupling region at a second location;

configuring a second isolation assembly, wherein the second isolation assembly is coupled through the second chamber wall and is coupled to the second plasma-tuning rod;

coupling a second protection assembly to the second isolation assembly, wherein a second portion of the second plasma-tuning rod extends into a second additional isolated tuning space established in the second protection assembly at the second location in the process space;

coupling a first matching network to the EM source and the first resonant cavity, the first matching network being configured to provide first EM energy to the first resonant cavity;

coupling a second matching network to the EM source and the second resonant cavity, the second matching network being configured to provide second EM energy to the second resonant cavity, wherein the EM source is configured to operate in a frequency range from 500 MHz to 5000 MHz; and

controlling the first EM energy, the second EM energy, and the EM source to maintain plasma uniformity in the process space in real-time.

20. The method of claim 19, further comprising:

coupling a first control assembly through at least one first cavity wall, wherein a controller is coupled to the first control assembly;

coupling a first tuning slab to the first control assembly that is configured to move the first tuning slab a first cavity-tuning distance relative to the first portion of the first plasma-tuning rod within the first resonant cavity, thereby optimizing a first plasma-tuning energy coupled from the first coupling region to the second portion of the first plasma-tuning rod;

coupling a second control assembly through at least one second cavity wall, wherein the controller is coupled to the second control assembly; and

coupling a second tuning slab to the second control assembly that is configured to move the second tuning slab a second cavity-tuning distance relative to the first portion of the second plasma-tuning rod within the second resonant cavity, thereby optimizing a second plasma-tuning energy coupled from the second coupling region to the second portion of the second plasma-tuning rod.