DRY CLEANING METHOD FOR RECOVERING ETCH PROCESS CONDITION

• US 20130084707A1
• Filed: 09/30/2011
• Published: 04/04/2013
• Est. Priority Date: 09/30/2011
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: KO, Akiteru, HASHIMOTO, Mitsuru, WULLUR, Aline
• Application Number:
  US13/249,748
• Publication Number:
  US 20130084707A1
• Time in Patent Office: Days
• US Class Current: 438/710
• CPC Class Codes: H01J 37/32724 Temperature
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/32137 of silicon-containing layers

Abstract

A method of patterning a substrate is described. The method includes establishing a reference etch process condition for a plasma processing system. The method further includes transferring a mask pattern formed in a mask layer to one or more layers on a substrate using at least one plasma etching process in the plasma processing system to form a feature pattern in the one or more layers and, following the transferring, performing a multi-step dry cleaning process to substantially recover the reference etch condition. Furthermore, the multi-step dry cleaning process includes performing a first dry cleaning process step using plasma formed from a first dry clean process composition containing an oxygen-containing gas, and performing a second dry cleaning process step using plasma formed from a second dry clean process composition containing a halogen-containing gas.

Claims

1. A method for patterning a substrate, comprising:

establishing a reference etch process condition for a plasma processing system;

transferring a mask pattern formed in a mask layer to one or more layers on a substrate using at least one plasma etching process in said plasma processing system to form a feature pattern in said one or more layers; and

following said transferring, performing a multi-step dry cleaning process to substantially recover said reference etch process condition, said multi-step dry cleaning process comprising;

performing a first dry cleaning process step using plasma formed from a first dry clean process composition containing an oxygen-containing gas, and

performing a second dry cleaning process step using plasma formed from a second dry clean process composition containing a halogen-containing gas.

2. The method of claim 1, further comprising:

repeating said first dry cleaning process step and/or said second dry cleaning process step.

3. The method of claim 1, further comprising:

preparing a multi-layer film stack including said one or more layers on said substrate, said multi-layer film stack having alternating layers of differing composition including one or more layers of a first composition and one or more layers of a second composition; and

preparing said mask layer on said multi-layer film stack and forming said mask pattern in said mask layer.

4. The method of claim 3, wherein said first composition includes Si and one or more elements selected from the group consisting of O, N, C, and H, and said second composition includes Si.

5. The method of claim 3, wherein said first composition is SiO₂ and said second composition is Si.

6. The method of claim 1, wherein said reference etch process condition comprises an etch rate of at least one of said layers of differing material composition, an etch selectivity between two or more of said layers of differing material composition, a critical dimension (CD) for said feature pattern formed in at least one of said layers of differing material composition, or a CD bias for said feature pattern, or any combination of two or more thereof.

7. The method of claim 6, wherein said reference etch process condition comprises an etch uniformity of said etch rate, said etch selectivity, said critical dimension, or said CD bias, or a combination of two or more thereof.

8. The method of claim 6, wherein said reference etch process condition includes an etch rate of a reference material on a reference substrate.

9. The method of claim 1, wherein said first dry clean process composition contains oxygen.

10. The method of claim 1, wherein said first dry clean process composition contains O, O₂, O₃, CO, CO₂, NO, N₂O, or NO₂, or any combination of two or more thereof.

11. The method of claim 1, wherein said second dry clean process composition contains fluorine and optionally oxygen.

12. The method of claim 1, wherein said second dry clean process composition contains NF₃.

13. The method of claim 1, wherein said first dry cleaning process step includes:

setting a pressure in said plasma processing system;

setting one or more flow rates for said first dry clean process composition; and

setting a first radio frequency (RF) power level for a first RF signal applied to a substrate holder upon which said substrate rests, said first RF signal having a RF frequency less than or equal to 10 MHz.

14. The method of claim 13, wherein said first dry cleaning process step further includes:

setting a second radio frequency (RF) power level for a second RF signal applied to said plasma processing system, said second RF signal having a RF frequency greater than 10 MHz.

15. The method of claim 1, wherein said second dry cleaning process step includes:

setting a pressure in said plasma processing system;

setting one or more flow rates for said second dry clean process composition; and

setting a first radio frequency (RF) power level for a first RF signal applied to a substrate holder upon which said substrate rests, said first RF signal having a RF frequency less than or equal to 10 MHz.

16. The method of claim 15, wherein said second dry cleaning process step further includes:

setting a second radio frequency (RF) power level for a second RF signal applied to said plasma processing system, said second RF signal having a RF frequency greater than 10 MHz.

17. The method of claim 15, wherein said first RF power level is set to a value of 100 W or less.

18. The method of claim 15, wherein said first RF power level is set to a value of 0 W.

19. The method of claim 1, wherein said first dry cleaning process step removes a first etch process residue on interior surfaces of said plasma processing system, and said second dry cleaning process step removes a second etch process residue on interior surfaces of said plasma processing system.

20. The method of claim 19, wherein said first etch process residue contains C, and said second etch process residue contains Br.