DRY CLEANING METHOD FOR RECOVERING ETCH PROCESS CONDITION
First Claim
1. A method for patterning a substrate, comprising:
- establishing a reference etch process condition for a plasma processing system;
transferring a mask pattern formed in a mask layer to one or more layers on a substrate using at least one plasma etching process in said plasma processing system to form a feature pattern in said one or more layers; and
following said transferring, performing a multi-step dry cleaning process to substantially recover said reference etch process condition, said multi-step dry cleaning process comprising;
performing a first dry cleaning process step using plasma formed from a first dry clean process composition containing an oxygen-containing gas, andperforming a second dry cleaning process step using plasma formed from a second dry clean process composition containing a halogen-containing gas.
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Abstract
A method of patterning a substrate is described. The method includes establishing a reference etch process condition for a plasma processing system. The method further includes transferring a mask pattern formed in a mask layer to one or more layers on a substrate using at least one plasma etching process in the plasma processing system to form a feature pattern in the one or more layers and, following the transferring, performing a multi-step dry cleaning process to substantially recover the reference etch condition. Furthermore, the multi-step dry cleaning process includes performing a first dry cleaning process step using plasma formed from a first dry clean process composition containing an oxygen-containing gas, and performing a second dry cleaning process step using plasma formed from a second dry clean process composition containing a halogen-containing gas.
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Citations
20 Claims
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1. A method for patterning a substrate, comprising:
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establishing a reference etch process condition for a plasma processing system; transferring a mask pattern formed in a mask layer to one or more layers on a substrate using at least one plasma etching process in said plasma processing system to form a feature pattern in said one or more layers; and following said transferring, performing a multi-step dry cleaning process to substantially recover said reference etch process condition, said multi-step dry cleaning process comprising; performing a first dry cleaning process step using plasma formed from a first dry clean process composition containing an oxygen-containing gas, and performing a second dry cleaning process step using plasma formed from a second dry clean process composition containing a halogen-containing gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification