Pre-charged CMUTs for zero-external-bias operation

• US 20130088118A1
• Filed: 10/10/2012
• Published: 04/11/2013
• Est. Priority Date: 10/11/2011
• Status: Active Grant

• Current Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford University)
• Original Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford University)
• Inventors: KHURI-YAKUB, BUTRUS T., HO, MIN-CHIEH, KUPNIK, MARIO
• Granted Patent: US 9,242,274 B2
• Time in Patent Office: Days
• US Class Current: 310/300
• CPC Class Codes: B06B 1/0292 Electrostatic transducers, e.g. electret-type

Abstract

Capacitive micromachined ultrasonic transducers (CMUTs) having a pre-charged floating electrode are provided. Such CMUTs can operate without an applied DC electrical bias. Charge can be provided to the floating electrode after or during fabrication in various ways, such as injection by an applied voltage, and injection by ion implantation.

Claims

1. A capacitive micromachined ultrasonic transducer (CMUT) comprising:

a substrate;

a CMUT plate disposed above the substrate;

a substrate electrode disposed on the substrate;

a plate electrode disposed on the CMUT plate;

a floating electrode disposed either on the substrate or on the CMUT plate, wherein the floating electrode has no electrical connection to the substrate electrode or to the plate electrode; and

wherein an electrical DC bias of the CMUT is provided in part or in full by charges trapped on the floating electrode.

2. A method of making a capacitive micromachined ultrasonic transducer (CMUT), the method comprising:

providing a substrate;

providing a CMUT plate disposed above the substrate;

providing a substrate electrode disposed on the substrate;

providing a plate electrode disposed on the plate;

providing a floating electrode disposed either on the substrate or on the CMUT plate, wherein the floating electrode has no electrical connection to the substrate electrode or to the plate electrode; and

trapping charge on the floating electrode to provide part or all of an electrical DC bias of the CMUT.

3. The method of claim 2, wherein the trapping charge comprises applying a voltage sufficient to inject charge onto the floating electrode.

4. The method of claim 2, wherein the trapping charge comprises ion implantation of charges on the floating electrode.