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Power Converter

  • US 20130088279A1
  • Filed: 04/01/2011
  • Published: 04/11/2013
  • Est. Priority Date: 04/01/2010
  • Status: Abandoned Application
First Claim
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1. A power converter, comprising:

  • a power semiconductor device;

    a driver circuit section that outputs a driving signal for driving the power semiconductor device;

    a buffer circuit section that includes a PNP transistor and an NPN transistor and that outputs a gate voltage for driving the power semiconductor device;

    a first delay circuit section that receives the driving signal and that generates a first delay signal based on the received driving signal; and

    a first MOSFET that has a drain electrode connected with an output of the buffer circuit section and that is driven based on the first delay signal, whereina current flows through the buffer circuit section and the first MOSFET based on the received driving signal,the first delay circuit section outputs the first delay signal after the buffer circuit section exits a transient state and turns on, andthe gate voltage is applied to the power semiconductor device from the buffer circuit section to turn the power semiconductor device on by a switching operation of the first MOSFET based on the first delay signal.

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