THIN FILM TRANSISTOR SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE

• US 20130088660A1
• Filed: 04/26/2011
• Published: 04/11/2013
• Est. Priority Date: 06/15/2010
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Kaneko, Seiji
• Application Number:
  US13/703,783
• Publication Number:
  US 20130088660A1
• Time in Patent Office: Days
• US Class Current: 349/43
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136218 Shield electrodes
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission

Abstract

Disclosed is a liquid crystal display device including a thin film transistor substrate, in which changes in the potential at a pixel electrode can be suppressed without decreasing the aperture ratio of a pixel. Gate wiring lines and source wiring lines are covered with a multilayer insulating film made of two layers of interlayer insulating films that overlap each other. Pixel electrodes are formed on the multilayer insulating film, and a shield electrode, which is formed of a transparent conductive material, is provided between the two layers of interlayer insulating films so as to extend along the gate wiring lines and the source wiring lines and to lie between the gate electrodes or the source electrodes and the pixel electrodes.

Claims

1. A thin film transistor substrate, comprising:

a plurality of gate wiring lines that extend in parallel with each other;

a plurality of source wiring lines that extend in parallel with each other so as to intersect with the respective gate wiring lines; and

a thin film transistor and a pixel electrode that are provided for each of intersections of the respective gate wiring lines and the respective source wiring lines,

wherein a plurality of pixels, each of which includes the thin film transistor and the pixel electrode, are defined by the respective gate wiring lines and the respective source wiring lines,

wherein, in each of the pixels, the thin film transistor comprises;

a gate electrode;

a semiconductor layer;

a source electrode; and

a drain electrode, the gate electrode being connected to one of the gate wiring lines, which runs through a corresponding intersection, the semiconductor layer overlapping the gate electrode through a gate insulating film, the source electrode being connected to one side of the semiconductor layer and being connected to one of the source wiring lines, which runs through the corresponding intersection, the drain electrode being connected to another side of the semiconductor layer so as to face the source electrode and being connected to the pixel electrode, and

wherein the thin film transistor substrate further comprises;

a multi-layer insulating film that includes two layers of interlayer insulating films laminated to each other and that covers the respective gate wiring lines and the respective source wiring lines, the multi-layer insulating film having the respective pixel electrodes formed thereon; and

a shielding electrode that is disposed between the two layers of interlayer insulating films and that is extended along the respective gate wiring lines and the source wiring lines so as to lie between the respective gate wiring lines or the respective source wiring lines and the respective pixel electrodes, the shielding electrode being made of a transparent conductive material.

2. The thin film transistor substrate according to claim 1,

wherein the shielding electrode is formed wider than the respective gate wiring lines and the respective source wiring lines so as to entirely overlap the respective gate wiring lines and the respective source wiring lines in a width direction thereof.

3. The thin film transistor substrate according to claim 1,

wherein the shielding electrode is formed so as to overlap an outer edge of each of the pixel electrodes through the interlayer insulating film of an upper layer.

4. The thin film transistor substrate according to claim 1,

wherein the shielding electrode is formed so as to cover the respective thin film transistors.

5. The thin film transistor substrate according to claim 1,

wherein, of the two layers of interlayer insulating films, at least the interlayer insulating film of the upper layer is made of an organic insulating film or made of a multi-layer film formed by laminating an inorganic insulating film and an organic insulating film in this order.

6. The thin film transistor substrate according to claim 1,

wherein the semiconductor layer of each of the thin film transistors is made of an oxide semiconductor.

7. The thin film transistor substrate according to claim 1,

wherein each of the thin film transistors has a bottom-gate structure in which the gate electrode is covered by the gate insulating film, and the semiconductor layer, the source electrode, and the drain electrode are formed on the gate insulating film,

wherein the thin film transistor substrate further comprises:

storage capacitance wiring lines that are provided for the respective gate wiring lines, the storage capacitance wiring lines being extended in parallel with each other along the respective gate wiring lines; and

storage capacitance elements provided for the respective pixels, and

wherein, in each of the pixels, the storage capacitance element comprises;

a lower electrode that is connected to the storage capacitance wiring line and that is covered by the gate insulating film;

a dielectric layer that is made of a portion of the gate insulating film corresponding to the lower electrode; and

an upper electrode that overlaps the lower electrode through the dielectric layer.

8. A liquid crystal display device, comprising:

the thin film transistor substrate according to claim 1;

an opposite substrate disposed to face the thin film transistor substrate; and

a liquid crystal layer disposed between the thin film transistor substrate and the opposite substrate.