MULTI-WAVELENGTH SEMICONDUCTOR LASER DEVICE

• US 20130089116A1
• Filed: 12/05/2012
• Published: 04/11/2013
• Est. Priority Date: 06/09/2009
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Okura, Yuji
• Granted Patent: US 8,687,668 B2
• Time in Patent Office: Days
• US Class Current: 372/50.121
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01S 5/02326 Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
• CPC Class Codes: H01S 5/40 Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30 H01S5/50 takes precedence
• CPC Class Codes: H01S 5/4037 with active layers in more than one orientation
• CPC Class Codes: H01S 5/4087 emitting more than one wavelength

Abstract

A multi-wavelength semiconductor laser device includes a block having a rectangular groove with a bottom face and two side faces extending in a predetermined direction; and laser diodes with different light emission wavelengths mounted on the bottom face and he side faces of the groove in the block so that their laser beams are emitted in the predetermined direction,

Claims

1-2. -2. (canceled)

3. A multi-wavelength semiconductor laser device comprising:

a block; and

a plurality of laser diodes producing light at emission wavelengths that are different from each other, wherein

the block includes a “

V”

-shape cross-section groove with two side faces extending in a predetermined direction, and

the laser diodes are mounted on the side faces of the groove so that each laser diode emits light in the predetermined direction.

4. A multi-wavelength semiconductor laser device comprising:

a block; and

a plurality of laser diodes producing light at emission wavelengths that are different from each other, wherein

the block includes a rectangular projection, and

the laser diodes are mounted on a top face and side faces of the projection.

5. A multi-wavelength semiconductor laser device comprising:

a block; and

a plurality of laser diodes producing light at emission wavelengths that are different from each other, wherein

the block includes a flat face and a projection extending from the flat face, and

the laser diodes are mounted on the flat face of the block and side faces of the projection,

6. The multi-wavelength semiconductor laser device of claim 5, wherein two of the laser diodes are mounted on the flat face of the block.

7. The multi-wavelength semiconductor laser device of claim 5, wherein two of the laser diodes are mounted on the side faces of the projection.