SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
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1. A display device comprising:
- a gate electrode and a first electrode over an insulating surface;
a first insulating film over the gate electrode and the first electrode;
an oxide semiconductor layer over the gate electrode with the first insulating film interposed therebetween;
a source electrode and a drain electrode over the oxide semiconductor layer, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer;
a second electrode over the first insulating film;
a second insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode;
a pixel electrode, and a transparent conductive layer over the second insulating film,wherein the pixel electrode is electrically connected to the drain electrode through the second insulating film, andwherein the transparent conductive layer is electrically connected to the first electrode through the first insulating film and the second insulating film and the second electrode through the second insulating film.
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Abstract
An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.
27 Citations
24 Claims
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1. A display device comprising:
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a gate electrode and a first electrode over an insulating surface; a first insulating film over the gate electrode and the first electrode; an oxide semiconductor layer over the gate electrode with the first insulating film interposed therebetween; a source electrode and a drain electrode over the oxide semiconductor layer, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer; a second electrode over the first insulating film; a second insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode; a pixel electrode, and a transparent conductive layer over the second insulating film, wherein the pixel electrode is electrically connected to the drain electrode through the second insulating film, and wherein the transparent conductive layer is electrically connected to the first electrode through the first insulating film and the second insulating film and the second electrode through the second insulating film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A display device comprising:
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a gate electrode and a first electrode over an insulating surface; a first insulating film over the gate electrode and the first electrode; an oxide semiconductor layer over the gate electrode with the first insulating film interposed therebetween; a source electrode, a drain electrode, and a second electrode over the first insulating film, the source electrode and the drain electrode being electrically connected to the oxide semiconductor; a second insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode; a pixel electrode, and a transparent conductive layer over the second insulating film, wherein the pixel electrode is electrically connected to the drain electrode through the second insulating film, and wherein the transparent conductive layer is electrically connected to the first electrode through the first insulating film and the second insulating film, and the second electrode through the second insulating film. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A display device comprising:
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a gate electrode, a capacitor electrode and a first electrode over an insulating surface; a first insulating film over the gate electrode, the capacitor electrode and the first electrode; an oxide semiconductor layer over the gate electrode with the first insulating film interposed therebetween; a source electrode, a drain electrode, and a second electrode over the oxide semiconductor layer, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer; a second insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode; a pixel electrode, and a transparent conductive layer over the second insulating film, wherein the pixel electrode is electrically connected to the drain electrode through the second insulating film, wherein the pixel electrode overlaps with the capacitor electrode to form a capacitor, and wherein the transparent conductive layer is electrically connected to the first electrode through the first insulating film and the second insulating film and the second electrode through the second insulating film. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A display device comprising:
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a gate electrode, a capacitor electrode and a first electrode over an insulating surface; a first insulating film over the gate electrode, the capacitor electrode and the first electrode; an oxide semiconductor layer over the gate electrode with the first insulating film interposed therebetween; a source electrode, a drain electrode, and a second electrode over the first insulating film, the source electrode and the drain electrode being electrically connected to the oxide semiconductor; a second insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode; a pixel electrode, and a transparent conductive layer over the second insulating film, wherein the pixel electrode is electrically connected to the drain electrode through the second insulating film, wherein the pixel electrode overlaps with the capacitor electrode to form a capacitor, and wherein the transparent conductive layer is electrically connected to the first electrode through the first insulating film and the second insulating film, and the second electrode through the second insulating film. - View Dependent Claims (20, 21, 22, 23, 24)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Akimoto, Kengo, Komori, Shigeki, Uochi, Hideki
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/43
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CPC Class CodesH01L 27/1225 with semiconductor material...H01L 29/66969 of devices having semicondu...H01L 29/78618 characterised by the drain ...H01L 29/7869 having a semiconductor body...H01L 2924/00 Indexing scheme for arrange...H01L 2924/0002 Not covered by any one of g...H01L 33/0041 characterised by field-effe...
