DISPLAY DEVICE

• US 20130092934A1
• Filed: 12/06/2012
• Published: 04/18/2013
• Est. Priority Date: 10/03/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, AKIMOTO, Kengo, KOMORI, Shigeki, UOCHI, Hideki, FUTAMURA, Tomoya, KASAHARA, Takahiro
• Granted Patent: US 8,674,371 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/0266 using field effect transistors as protective elements
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.

Claims

1. A semiconductor device comprising:

a line;

a common wiring;

a first non-linear element comprising;

a first gate electrode layer;

a gate insulating layer over the first gate electrode layer;

a first wiring layer over the gate insulating layer;

a second wiring layer over the gate insulating layer; and

a first oxide semiconductor layer in contact with the gate insulating layer, the first wiring layer, and the second wiring layer; and

a second non-linear element comprising;

a second gate electrode layer;

the gate insulating layer over the second gate electrode layer;

a third wiring layer over the gate insulating layer;

a fourth wiring layer over the gate insulating layer; and

a second oxide semiconductor layer in contact with the gate insulating layer, the third wiring layer, and the fourth wiring layer,

wherein the common wiring is electrically connected to the first gate electrode layer, the first wiring layer, and the third wiring layer,

wherein the line is electrically connected to the second gate electrode layer, the second wiring layer, and the fourth wiring layer, and

wherein the line is in direct contact with the second wiring layer and the fourth wiring layer.

3. The semiconductor device according to claim 1, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer includes indium, gallium, and zinc.

5. The semiconductor device according to claim 1, wherein the gate insulating layer includes an aluminum oxide.

7. The semiconductor device according to claim 1, further comprising a pixel including a transistor, the transistor being electrically connected to the line,

wherein the line is a scan line or a signal line.

9. The semiconductor device according to claim 1, wherein the first oxide semiconductor layer is formed by a non-single crystalline semiconductor film.

11. The semiconductor device according to claim 1, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer includes indium, and zinc.

13. The semiconductor device according to claim 1, wherein the first oxide semiconductor layer is located over the first wiring layer and the second wiring layer.

14. The semiconductor device according to claim 13, wherein the second oxide semiconductor layer is located over the third wiring layer and the fourth wiring layer.

17. The semiconductor device according to claim 1,

wherein the second wiring layer and the fourth wiring layer are included in a layer,

wherein the second gate electrode layer is constituted by extending the line,

wherein the first gate electrode layer and the second gate electrode layer are formed of the first same material, and

wherein the common wiring and the layer are formed of the second same material.

2. A semiconductor device comprising:

a line;

a common wiring;

a first non-linear element comprising;

a first gate electrode layer;

a gate insulating layer over the first gate electrode layer;

a first wiring layer over the gate insulating layer;

a second wiring layer over the gate insulating layer; and

a first oxide semiconductor layer in contact with the gate insulating layer, the first wiring layer, and the second wiring layer;

a second non-linear element comprising;

a second gate electrode layer;

the gate insulating layer over the second gate electrode layer;

a third wiring layer over the gate insulating layer;

a fourth wiring layer over the gate insulating layer; and

a second oxide semiconductor layer in contact with the gate insulating layer, the third wiring layer, and the fourth wiring layer; and

a third non-linear element comprising a third gate electrode layer, a fifth wiring layer, a sixth wiring layer, and a third oxide semiconductor layer,

wherein the common wiring is electrically connected to the first gate electrode layer, the first wiring layer, and the fifth wiring layer,

wherein the line is electrically connected to the second gate electrode layer, the third wiring layer, and the sixth wiring layer,

wherein the third gate electrode layer is electrically connected to the second wiring layer and the fourth wiring layer, and

wherein the line is in direct contact with the third wiring layer and the sixth wiring layer.

4. The semiconductor device according to claim 2, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer includes indium, gallium, and zinc.

6. The semiconductor device according to claim 2, wherein the gate insulating layer includes an aluminum oxide.

8. The semiconductor device according to claim 2, further comprising a pixel including a transistor, the transistor being electrically connected to the line,

wherein the line is a scan line or a signal line.

10. The semiconductor device according to claim 2, wherein the first oxide semiconductor layer is formed by a non-single crystalline semiconductor film.

12. The semiconductor device according to claim 2, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer includes indium, and zinc.

15. The semiconductor device according to claim 2, wherein the first oxide semiconductor layer is located over the first wiring layer and the second wiring layer.

16. The semiconductor device according to claim 15, wherein the second oxide semiconductor layer is located over the third wiring layer and the fourth wiring layer.

18. The semiconductor device according to claim 2,

wherein the first wiring layer and the fifth wiring layer are constituted by extending the common wiring,

wherein the second wiring layer and the fourth wiring layer are included in a first layer,

wherein the third wiring layer and the sixth wiring layer are included in a second layer, and

wherein the first layer is electrically connected to the third gate electrode layer.

19. The semiconductor device according to claim 18,

wherein the second gate electrode layer is constituted by extending the line,

wherein the line is in direct contact with the second layer,

wherein the first gate electrode layer, the second gate electrode layer, and the third gate electrode layer are formed of the first same material, and

wherein the common wiring, the first layer, and the second layer are formed of the second same material.