SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- an oxide semiconductor film;
a gate insulating film over the oxide semiconductor film, the gate insulating film comprising an oxide comprising silicon; and
a gate electrode over the gate insulating film, the gate electrode overlapping the oxide semiconductor film,wherein the oxide semiconductor film comprises a first region in which a concentration of silicon distributed from an interface with the gate insulating film toward an inside of the oxide semiconductor film is lower than or equal to 1.1 at. %.
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Accused Products
Abstract
To suppress a decrease in on-state current in a semiconductor device including an oxide semiconductor. Provided is a semiconductor device including the following: an oxide semiconductor film which serves as a semiconductor layer; a gate insulating film including an oxide containing silicon, over the oxide semiconductor film; a gate electrode which overlaps with at least the oxide semiconductor film, over the gate insulating film; and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. In the semiconductor device, the oxide semiconductor film overlapping with at least the gate electrode includes a region in which a concentration of silicon distributed from the interface with the gate insulating film toward the inside of the oxide semiconductor film is lower than or equal to 1.1 at. %.
43 Citations
14 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor film; a gate insulating film over the oxide semiconductor film, the gate insulating film comprising an oxide comprising silicon; and a gate electrode over the gate insulating film, the gate electrode overlapping the oxide semiconductor film, wherein the oxide semiconductor film comprises a first region in which a concentration of silicon distributed from an interface with the gate insulating film toward an inside of the oxide semiconductor film is lower than or equal to 1.1 at. %. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of manufacturing a semiconductor device, the method comprising the steps of:
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forming an oxide semiconductor film; forming a gate insulating film comprising an oxide comprising silicon, over the oxide semiconductor film; and forming a gate electrode over the gate insulating film, wherein a first layer of the gate insulating film is formed so that a concentration of silicon distributed from an interface with the gate insulating film toward an inside of the oxide semiconductor film is lower than or equal to 1.1 at. %, and wherein after formation of the first layer of the gate insulating film, a second layer of the gate insulating film is formed under a condition that a deposition rate of the second layer of the gate insulating film is higher than a deposition rate of the first layer of the gate insulating film. - View Dependent Claims (10, 11, 12, 13, 14)
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Specification
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- Resources
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsHONDA, Tatsuya, TSUBUKU, Masashi, NONAKA, Yusuke, YAMAZAKI, Shunpei
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/57
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CPC Class CodesH01L 21/02554 OxidesH01L 21/02565 Oxide semiconducting materi...H01L 21/02631 Physical deposition at redu...H01L 29/7869 having a semiconductor body...
