LIGHT EMITTING DEVICE

• US 20130092965A1
• Filed: 10/01/2012
• Published: 04/18/2013
• Est. Priority Date: 03/30/2010
• Status: Abandoned Application

• Current Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Original Assignee: Fumiko Yoyasu, Hiroya Kodama, Naoto Kijima, Tadahiro Katsumoto, Toru Takeda, Toshiaki Yokoo
• Inventors: ONAKA, SHUUJI, KIJIMA, NAOTO, KODAMA, HIROYA, KATSUMOTO, TADAHIRO, YOKOO, TOSHIAKI, TAKEDA, TORU, YOYASU, FUMIKO
• Application Number:
  US13/632,924
• Publication Number:
  US 20130092965A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: F21K 9/64 using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
• CPC Class Codes: F21V 13/14 the elements being filters or photoluminescent elements, reflectors and refractors
• CPC Class Codes: F21V 29/506 of globes, bowls or cover glasses
• CPC Class Codes: F21V 29/75 with fins or blades having different shapes, thicknesses or spacing
• CPC Class Codes: F21V 29/763 the planes containing the fins or blades having the direction of the light emitting axis
• CPC Class Codes: F21V 29/83 the elements having apertures, ducts or channels, e.g. heat radiation holes
• CPC Class Codes: F21V 3/04 characterised by materials, surface treatments or coatings
• CPC Class Codes: F21V 9/38 Combination of two or more photoluminescent elements of different materials
• CPC Class Codes: F21V 9/45 by adjustment of photoluminescent elements
• CPC Class Codes: F21Y 2103/10 comprising a linear array of point-like light-generating elements
• CPC Class Codes: F21Y 2107/90 on two opposite sides of supports or substrates
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Abstract

An object of the present invention is to provide a light emitting device exhibiting a superior emission efficiency which enables easy adjustment of an emission spectrum.

The above object is achieved by a light emitting device comprising a semiconductor light emitting element and a phosphor layer, which has an area A and an area B of different emission spectra, and in which a plurality of phosphor portions are disposed on a plane such that identical phosphor portions do not adjoin one another, and the surface area occupied by specific phosphor portions in the phosphor layer is different in area A and area B.

Claims

1. A light emitting device which is configured having a semiconductor light emitting element and a phosphor layer which has an area A and an area B with different emission spectra, wherein

(i) the semiconductor light emitting element emits light of a wavelength of 350 nm or more and 520 nm or less,

(ii) the area A includes two or more 1Ath phosphor portions and two or more 2Ath phosphor portions, and the area B includes two or more 1Bth phosphor portions and two or more 2Bth phosphor portions,

(iii) the 1Ath phosphor portions and the 2Ath phosphor portions which adjoin one another in the area A are disposed in a direction perpendicular to the thickness direction of the phosphor layer at the interface between the 1Ath and 2Ath phosphor portions, and the 1Ath phosphor portions and the 2Ath phosphor portions which adjoin one another in the area B are disposed in a direction perpendicular to the thickness direction of the phosphor layer at the interface between the 1Ath and 2Ath phosphor portions,

(iv) the 1Ath phosphor portions include a 1Ath phosphor which is able to emit light having a longer wavelength light than the light emitted by the semiconductor light emitting element, by being excited by the light emitted by the semiconductor light emitting element,

(v) the 2Ath phosphor portions include a 2Ath phosphor which is able to emit light having a longer wavelength light than the light emitted by the first phosphor, by being excited by the light emitted by the semiconductor light emitting element,

(vi) the 1Bth phosphor portions include a 1Bth phosphor which is able to emit light having a longer wavelength light than the light emitted by the semiconductor light emitting element, by being excited by the light emitted by the semiconductor light emitting element,

(vii) the 2Bth phosphor portions include a 2Bth phosphor which is able to emit light having a longer wavelength light than the light emitted by the semiconductor light emitting element, by being excited by the light emitted by the semiconductor light emitting element, and

(viii) a proportion of the light which is irradiated onto area A and area B from the semiconductor light emitting element can be adjusted.

2. The light emitting device according to claim 1,

wherein the proportion of the light which is irradiated onto area A and area B from the semiconductor light emitting element can be adjusted by moving the phosphor layer or the semiconductor light emitting element in order to change relative positions of the phosphor layer and the semiconductor light emitting element.

3. The light emitting device according to claim 1,

wherein the phosphor layer satisfies the condition of formula [1] below when, at a light emission-side face of the light emitting device, the sum total of the surface area occupied by the 1Ath phosphor portions of area A is S_A1, a sum total of the surface area occupied by the 2Ath phosphor portions of area A is S_A2, a sum total of the surface area occupied by the 1Bth phosphor portions of area B is S_B1, and a sum total of the surface area occupied by the 2Bth phosphor portions of area B is S_B2:

S_A2/S_A1≠

S_B2/S_B1 

 

[1].

4. The light emitting device according to claim 1,

wherein the phosphor layer satisfies the condition of formula [2] below when a sum total of the thickness of the 1Ath phosphor portions of area A is T_A1, a sum total of the thickness of the 2Ath phosphor portions of area A is T_A2, a sum total of the thickness of the 1Bth phosphor portions of area B is T_B1, and a sum total of the thickness of the 2Bth phosphor portions of area B is T_B2:

T_A2/T_A1≠

T_B2/T_B1 

 

[2].

5. The light emitting device according to claim 1,

wherein, in the phosphor layer, the 1Ath phosphor is of a different type from the 1Bth phosphor and/or the 2Ath phosphor is of a different type from the 2Bth phosphor.

6. The light emitting device according to claim 1,

wherein a proportion of the surface area of a part having phosphors of a plurality of types in the thickness direction of the phosphor layer relative to a light emission surface area of the light emitting device is 0% or more and 20% or less.

7. The light emitting device according to claim 1,

wherein the phosphor layer comprises a light shielding portion and the light shielding portion is disposed between the 1Ath phosphor portion and the 2Ath phosphor portion so as to prevent light, which is emitted from the 1Ath phosphor portion, from entering the 2Ath phosphor portion and/or disposed between the 1Bth phosphor portion and the 2Bth phosphor portion so as to prevent light, which is emitted from the 1Bth phosphor portion, from entering the 2Bth phosphor portion.

8. The light emitting device according to claim 1,

wherein an area X is further provided between the area A and the area B,

(i) the area X includes two or more 1Xth phosphor portions and two or more 2Xth phosphor portions,

(ii) in the area X, the 1Xth phosphor portions and the 2Xth phosphor portions which adjoin each other are disposed in a direction perpendicular to the thickness direction of the phosphor layer at the interface between the adjoining 1Xth phosphor portions and 2Xth phosphor portions,

(iii) the 1Xth phosphor portions include a 1Xth phosphor which is able to emit light having a longer wavelength light than the light emitted by the semiconductor light emitting element, by being excited by the light emitted by the semiconductor light emitting element,

(iv) the 2Xth phosphor portions include a 2Xth phosphor which is able to emit light having a longer wavelength light than the light emitted by the 1Xth phosphor, by being excited by the light emitted by the semiconductor light emitting element, and

(v) conditions of formulae [3] and [4] below are satisfied when a sum total of the surface area occupied by the 1Xth phosphor portions in the area X is S_X1, and a sum total of the surface area occupied by the 2Xth phosphor portions in the area X is S_X2:

S_A2/S_A1≠

S_X2/S_X1 

 

[3]

S_B2/S_B1≠

S_X2/S_X1 

 

[4].

9. The light emitting device according to claim 8,

wherein a phosphor layer is disposed such that, by adjusting a proportion of light which is irradiated onto the area A and the area B from the semiconductor light emitting element, the light emitted by the light emitting device can be adjusted to an optional chromaticity which is located on a straight line, in the chromaticity diagram, linking a chromaticity A (x_A, y_A) of the light emitted from the area A to a chromaticity X (x_X, y_X) of the light emitted from the area X, or adjusted to an optional chromaticity which is located on a straight line linking a chromaticity B (x_B, y_B) of the light emitted from the area B to the chromaticity X (x_X, y_X) of the light emitted from the area X.

10. The light emitting device according to claim 9,

wherein the chromaticity X (x_X, y_X) is located on a straight line linking the chromaticity A (x_A, y_A) to the chromaticity B (x_B, y_B).

11. The light emitting device according to claim 9,

wherein the chromaticity X (x_X, y_X) is not located on a straight line linking the chromaticity A (x_A, y_A) to the chromaticity B (x_B, y_B).

12. The light emitting device according to claim 9,

wherein the light emitting device is configured having a phosphor layer which is disposed such that, by adjusting a proportion of light which is irradiated onto the area A and the area B from the semiconductor light emitting element, the light emitted by the light emitting device can be adjusted to an optional chromaticity which is located on an optional curve, in the chromaticity diagram, linking a chromaticity A (x_A, y_A) of the light emitted from the area A, a chromaticity X (x_X, y_X) of the light emitted from the area X, and a chromaticity B (x_B, y_B) of the light emitted from the area B.

13. The light emitting device according to claim 12,

wherein, by adjusting the proportion of the light which is irradiated onto the area A and the area B from the semiconductor light emitting element, the chromaticity of the light which is emitted by the light emitting device can be continuously adjusted within a range in which a deviation duv from a black body radiation curve is −

0.02≦

duv≦

0.02.

14. The light emitting device according to claim 12,

wherein, by moving the phosphor layer or the semiconductor light emitting element in a direction perpendicular to the thickness direction of the phosphor layer, the chromaticity of the light emitted by the light emitting device can be continuously adjusted along the black body radiation curve.

15. The light emitting device according to claim 1,

wherein a color temperature of the color emitted by the light emitting device can be adjusted from 2800 K to 6500 K by adjusting the proportion of light irradiated onto the area A and the area B from the semiconductor light emitting element.

16. The light emitting device according to claim 1,

wherein a distance between the semiconductor light emitting element and the phosphor layer is 1 mm or more and 500 mm or less.

17. The light emitting device according to claim 1, further comprising:

on the light emission side of the light emitting device of the phosphor layer, a bandpass filter which reflects at least a portion of the light emitted by the semiconductor light emitting element and transmits at least a portion of the light emitted by the phosphor.

18. The light emitting device according to claim 1, further comprising:

on the semiconductor light emitting element side of the phosphor layer, a bandpass filter which transmits at least a portion of the light emitted by the semiconductor light emitting element and reflects at least a portion of the light emitted by the phosphor.

19. The light emitting device according to claim 1, further comprising:

a substrate on which the semiconductor light emitting element is disposed; and

a cylindrical housing member which houses the substrate, wherein

the phosphor layer is disposed on at least a portion of the housing member,

the housing member is provided turnably about the center axis thereof in a state where the substrate is immobile,

in the phosphor layer, the area A and the area B are disposed in different positions in a peripheral direction of the housing member, and

the proportion of light irradiated onto the area A and the area B from the semiconductor light emitting element can be adjusted by adjusting a relative turn position of the housing member relative to the substrate.

20. The light emitting device according to claim 19,

wherein the area A and the area B divide the phosphor layer in a peripheral direction and are disposed as areas along a center axis direction of the housing member.

21. The light emitting device according to claim 19,

wherein the phosphor layer is disposed over the whole circumference of the housing member.

22. The light emitting device according to claim 19,

wherein the semiconductor light emitting element is disposed on both faces of the substrate so as to hold the substrate from both sides, and, in the phosphor layer, phosphor layers having mutually identical emission spectra are disposed in symmetrical areas, with the center axis of the housing member between both sides of the symmetrical areas.

23. The light emitting device according to claim 22,

wherein a reflective member is provided on the outside of the housing member such that the light emitted from the housing member which corresponds to the semiconductor light emitting element disposed on one face of the substrate is reflected toward the emission area of the emitted light which corresponds to the semiconductor light emitting element disposed on the other face of the substrate.

24. The light emitting device according to claim 19,

wherein the semiconductor light emitting element is disposed only on one of the faces of the substrate, and, in a housing space of the housing member, a heat radiation member for radiating the heat of the semiconductor light emitting element is disposed in thermal contact with the other face of the substrate, in a space which the other face of the substrate faces.

25. The light emitting device according to claim 19, wherein

the housing member has a cylindrical shape, and

in a case where the semiconductor light emitting element disposed on the substrate is disposed eccentric to the center axis of the housing member, the semiconductor light emitting element is provided to reduce an angle formed between a normal direction of a virtual ground plane at a point of intersection between the irradiation center direction of the light emitted by the semiconductor light emitting element and the phosphor layer, and the irradiation center direction.

26. The light emitting device according to claim 25,

wherein, on the substrate, a cross-section orthogonal to the center axis of the housing member has a bent plate shape or arc shape.