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SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

  • US 20130102138A1
  • Filed: 10/25/2011
  • Published: 04/25/2013
  • Est. Priority Date: 10/25/2011
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device, comprising:

  • forming a first gate feature and a second gate feature in an inter-layer dielectric (ILD) layer over a substrate, wherein the first and the second gate features have a first resistance;

    transforming the first gate feature to a treated gate feature having a second resistance, wherein the second resistance is higher than the first resistance;

    removing the second gate feature to form a opening in the ILD layer; and

    forming a conductive gate feature in the opening.

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