LIGHT-EMITTING DIODE DEVICE

• US 20130105835A1
• Filed: 07/26/2012
• Published: 05/02/2013
• Est. Priority Date: 10/31/2011
• Status: Active Grant

• Current Assignee: Lite-On Electronics Company Limited (Lite-On Technology Corporation)
• Original Assignee: Lite-On Technology Corporation, Silitek Electronic Company Limited (Lite-On Technology Corporation)
• Inventors: LIN, CHEN-HSIU, WU, CHIA-HAO, CHANG, YI-CHIEN, WENG, MING-KUN
• Granted Patent: US 8,729,586 B2
• Time in Patent Office: Days
• US Class Current: 257/89
• CPC Class Codes: F21Y 2113/17 forming a single encapsulated light source
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/64 Heat extraction or cooling elements

Abstract

A light-emitting diode device includes: a substrate; an upper metal film disposed on an upper surface of the substrate, and including a chip-mounting region and a plurality of conductive pad regions; two first light-emitting chips and two second light-emitting chips disposed on the chip-mounting region, the first and second light-emitting chips being disposed alternately, two of the first and second light-emitting chips being opposite to each other; a fluorescent layer coated on the first light-emitting chips; and a lens disposed on the substrate to cover the first and second light-emitting chips and the fluorescent layer.

Claims

1. A light-emitting diode device comprising:

a substrate;

an upper metal film disposed on an upper surface of said substrate, and including a chip-mounting region and a plurality of conductive pad regions surrounding said chip-mounting region;

two first light-emitting chips and two second light-emitting chips disposed on said chip-mounting region, said first and second light-emitting chips being disposed alternately, two of said first and second light-emitting chips being opposite to each other, said second light-emitting chips emitting light having a wavelength different from that emitted by said first light-emitting chips;

a fluorescent layer coated on said first light-emitting chips; and

a lens disposed on said substrate to cover said first and second light-emitting chips and said fluorescent layer.

2. The light-emitting diode device of claim 1, wherein said fluorescent layer is coated on said first light-emitting chips and on parts of said chip-mounting region proximate to said first light-emitting chips, and is not coated on said second light-emitting chips.

3. The light-emitting diode device of claim 1, wherein each of said second light-emitting chips has a side face facing said side face of the other one of said second light-emitting chips.

4. The light-emitting diode device of claim 1, wherein each of said first light-emitting chips has a side face facing said side face of the other one of said first light-emitting chips.

5. The light-emitting diode device of claim 1, wherein said first and second light-emitting chips are spaced apart from one another by a distance ranging from 0.2 mm to 0.5 mm.

6. The light-emitting diode device of claim 1, wherein said lens has a largest height from an imaginary plane defined by a top face of each of said first light-emitting chips, and a largest radius in said imaginary plane, a ratio of said largest height to said largest radius being greater than 1 and smaller than 1.2.

7. The light-emitting diode device of claim 1, wherein said chip-mounting region is a square region, and said lens covers said chip-mounting region and has a largest diameter in an imaginary plane defined by a top face of each of said first light-emitting chips, said largest diameter being equal to a diagonal length of said square region.

8. The light-emitting diode device of claim 1, further comprising a lower metal film and a plurality of metal interconductors, said lower metal film being disposed on a lower surface of said substrate, said plurality of metal interconductors being disposed between said upper metal film and said lower metal film.

9. The light-emitting diode device of claim 8, wherein said lower metal film further comprises at least one heat-dissipation region and a plurality of solder pad regions that respectively correspond in position to said conductive pad regions, each of said metal interconductors passing through said substrate to interconnect one of said conductive pad regions and a respective one of said solder pad regions.

10. The light-emitting diode device of claim 9, wherein said upper metal film includes eight of said conductive pad regions, said lower metal film including eight of said solder pad regions that respectively correspond in position to eight of said conductive pad regions, wherein each of said first and second chips is electrically connected to respective two of said conductive pad regions, said heat-dissipation region having two opposite sides each of which is adjacent to respective four of said solder pad regions.

11. The light-emitting diode device of claim 9, wherein said upper metal film includes eight of said conductive pad regions, said lower metal film including eight of said solder pad regions that respectively correspond in position to eight of said conductive pad regions, wherein each of said first and second chips is electrically connected to respective two of said conductive pad regions, said lower metal film including four of said heat-dissipation regions, each of said heat-dissipation regions is adjacent to respective two of said solder pad regions.

12. The light-emitting diode device of claim 1, wherein said upper metal film is formed with a plurality of recesses in said chip-mounting region proximate to a periphery of said chip-mounting region.

13. The light-emitting diode device of claim 12, wherein the shape of each of said recesses is selected from a group consisting of L or T.

14. The light-emitting diode device of claim 1, wherein said lens is made from a colloid resin doped with a diffuser in a concentration of not greater than 0.5 wt %.

15. The light-emitting diode device of claim 1, wherein said lens includes a main body made of a light transmitting material, and a diffusion layer covering over said main body.

16. A light-emitting diode device comprising:

a substrate;

an upper metal film disposed on an upper surface of said substrate, and including a chip-mounting region and a plurality of conductive pad regions surrounding said chip-mounting region;

two first light-emitting chips and two second light-emitting chips disposed on said chip-mounting region, said first and second light-emitting chips being disposed alternately, two of said first and second light-emitting chips being opposite to each other, each of said second light-emitting chips having a side face facing said side face of the other one of said second light-emitting chips, said side face of each of said second light-emitting chips inclining at an angle with respective to an adjacent side face of one of said first light-emitting chips, said second light-emitting chips emit light having a wavelength different from that emitted by said first light-emitting chips;

a fluorescent layer coated on said first light-emitting chips; and

a lens disposed on said substrate to cover said first and second light-emitting chips and said fluorescent layer.

17. The light-emitting diode device of claim 16, wherein said side face of each of said second light-emitting chips inclines at an angle of 40°

to 50°

with respect to an adjacent side face of one of said first light-emitting chips.