Low Stray Inductance Power Module

• US 20130105960A1
• Filed: 10/26/2011
• Published: 05/02/2013
• Est. Priority Date: 10/26/2011
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Jones, Patrick, Domes, Daniel, Christmann, Andre
• Granted Patent: US 8,637,964 B2
• Time in Patent Office: Days
• US Class Current: 257/690
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48139 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/4846 with multiple bonds on the same bonding area
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/07 the devices being of a type provided for in group H01L29/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30107 : Inductance

Abstract

A power module includes a substrate including an insulating member and a patterned metallization on the insulating member. The patterned metallization is segmented into a plurality of spaced apart metallization regions. Adjacent ones of the metallization regions are separated by a groove which extends through the patterned metallization to the insulating member. A first power transistor circuit includes a first power switch attached to a first one of the metallization regions and a second power switch attached to a second one of the metallization regions adjacent a first side of the first metallization region. A second power transistor circuit includes a third power switch attached to the first metallization region and a fourth power switch attached to a third one of the metallization regions adjacent a second side of the first metallization region which opposes the first side. The second power transistor circuit mirrors the first power transistor circuit.

Claims

1. A power module, comprising:

a substrate including an insulating member and a patterned metallization on the insulating member, the patterned metallization being segmented into a plurality of spaced apart metallization regions, adjacent ones of the metallization regions being separated by a groove which extends through the patterned metallization to the insulating member;

a first power transistor circuit including a first power switch attached to a first one of the metallization regions and a second power switch attached to a second one of the metallization regions adjacent a first side of the first metallization region; and

a second power transistor circuit including a third power switch attached to the first metallization region and a fourth power switch attached to a third one of the metallization regions adjacent a second side of the first metallization region which opposes the first side, the second power transistor circuit mirroring the first power transistor circuit.

2. A power module according to claim 1, wherein the first power transistor circuit is operable to generate a first current flow in a first direction and the second power transistor circuit is operable to generate a second current flow in a second direction opposite the first direction so that a magnetic field arising responsive to the first current flow is at least partly counteracted by a magnetic field arising responsive to the second current flow.

3. A power module according to claim 1, wherein the first power transistor circuit is operable to generate a current loop through the first and second power switches, the current loop having a width corresponding to a width of the first and second power switches, a width of the groove separating the first and second metallization regions, a distance between a first edge of the groove and a side of the first power switch facing the groove, and a distance between a second opposing edge of the groove and a side of the second power switch facing the groove.

4. A power module according to claim 1, wherein the substrate is a direct copper bonded substrate.

5. A power module according to claim 1, further comprising a first plurality of DC power terminals of a first polarity and a second plurality of DC power terminals of a second polarity disposed along a same side of the power module so that the first plurality of DC power terminals are grouped together and collectively interposed between a first set of the second plurality of DC power terminals and a second set of the second plurality of DC power terminals.

6. A power module according to claim 5, further comprising a plastic frame housing the substrate, the first power transistor circuit and the second power transistor circuit, and wherein the first and second plurality of DC power terminals are disposed along the same side of the plastic frame and spaced apart by a minimal distance corresponding to a creepage distance of the plastic frame.

7. A power module according to claim 1, wherein the groove separating the first and second metallization regions has a first edge and a second opposing edge, and wherein the first power switch is arranged adjacent the first edge and the second power switch is arranged adjacent the second edge.

8. A power module according to claim 7, wherein a distance between the first edge of the groove and a side of the first power switch facing the groove is 0.5 mm or less, and wherein a distance between the second edge of the groove and a side of the second power switch facing the groove is 0.5 mm or less.

9. A power module according to claim 1, wherein the groove separating the first and third metallization regions has a first edge and a second opposing edge, and wherein the third power switch is arranged adjacent the first edge and the fourth power switch is arranged adjacent the second edge.

10. A power module according to claim 9, wherein a distance between the first edge of the groove and a side of the third power switch facing the groove is 0.5 mm or less, and wherein a distance between the second edge of the groove and a side of the fourth power switch facing the groove is 0.5 mm or less.

11. A power module, comprising:

a substrate including an insulating member and a patterned metallization on the insulating member, the patterned metallization being segmented into a plurality of spaced apart metallization regions, adjacent ones of the metallization regions being separated by a groove which extends through the patterned metallization to the insulating member;

a first half-bridge circuit including a first power switch attached to a first one of the metallization regions and a second power switch attached to a second one of the metallization regions adjacent a first side of the first metallization region; and

a second half-bridge circuit including a third power switch attached to the first metallization region and a fourth power switch attached to a third one of the metallization regions adjacent a second side of the first metallization region which opposes the first side, the second half-bridge circuit mirroring the first half-bridge circuit.

12. A power module according to claim 11, wherein the first power switch is a first high side switch, the second power switch is a first low side switch, the third power switch is a second high side switch and the fourth power switch is a second low side switch.

13. A power module according to claim 11, wherein the first power switch is a first low side switch, the second power switch is a first high side switch, the third power switch is a second low side switch and the fourth power switch is a second high side switch.

14. A power module according to claim 11, wherein the first half-bridge circuit is operable to generate a first current flow in a first direction and the second half-bridge circuit is operable to generate a second current flow in a second direction opposite the first direction so that a magnetic field arising responsive to the first current flow is at least partly counteracted by a magnetic field arising responsive to the second current flow.

15. A power module according to claim 11, wherein the first half-bridge circuit is operable to generate a current loop through the first and second power switches, the current loop having a width corresponding to a width of the first and second power switches, a width of the groove separating the first and second metallization regions, a distance between a first edge of the groove and a side of the first power switch facing the groove, and a distance between a second opposing edge of the groove and a side of the second power switch facing the groove.

16. A power module according to claim 11, wherein the substrate is a direct copper bonded substrate.

17. A power module according to claim 11, further comprising a first plurality of DC power terminals of a first polarity and a second plurality of DC power terminals of a second polarity disposed along a same side of the power module so that the first plurality of DC power terminals are grouped together and collectively interposed between a first set of the second plurality of DC power terminals and a second set of the second plurality of DC power terminals.

18. A power module according to claim 17, further comprising a plastic frame housing the substrate, the first half-bridge circuit and the second half-bridge circuit, and wherein the first and second plurality of DC power terminals are disposed along the same side of the plastic frame and spaced apart by a minimal distance corresponding to a creepage distance of the plastic frame.

19. A power module according to claim 11, wherein the groove separating the first and second metallization regions has a first edge and a second opposing edge, and wherein the first power switch is arranged adjacent the first edge and the second power switch is arranged adjacent the second edge.

20. A power module according to claim 19, wherein a distance between the first edge of the groove and a side of the first power switch facing the groove is 0.5 mm or less, and wherein a distance between the second edge of the groove and a side of the second power switch facing the groove is 0.5 mm or less.

21. A power module according to claim 11, wherein the groove separating the first and third metallization regions has a first edge and a second opposing edge, and wherein the third power switch is arranged adjacent the first edge and the fourth power switch is arranged adjacent the second edge.

22. A power module according to claim 20, wherein a distance between the first edge of the groove and a side of the third power switch facing the groove is 0.5 mm or less, and wherein a distance between the second edge of the groove and a side of the fourth power switch facing the groove is 0.5 mm or less.