SILICON SUBMOUNT FOR LIGHT EMITTING DIODE AND METHOD OF FORMING THE SAME

• US 20130105978A1
• Filed: 12/26/2011
• Published: 05/02/2013
• Est. Priority Date: 10/26/2011
• Status: Abandoned Application

• Current Assignee: Episil Technologies Incorporated
• Original Assignee: Episil Technologies Incorporated
• Inventors: Hung, Chih-Lung
• Application Number:
  US13/337,159
• Publication Number:
  US 20130105978A1
• Time in Patent Office: Days
• US Class Current: 257/751
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/641 characterized by the materials

Abstract

A silicon submount for a light emitting diode (LED) including a silicon base, a first insulating layer, a first electrode, a second electrode, and a reflective layer is provided. The silicon base has an upper surface and a lower surface, and a recess is disposed at the upper surface. The first insulating layer covers the upper surface and the lower surface of the silicon base. The first electrode and the second electrode are disposed on the first insulating layer on a bottom of the recess. The reflective layer is disposed on the first insulating layer on a sidewall of the recess. The first electrode, the second electrode, and the reflective layer are separated from one another and formed by the same material.

Claims

1. A silicon submount for a light emitting diode, comprising:

a silicon base having an upper surface and a lower surface, a recess being disposed at the upper surface;

a first insulating layer covering the upper surface and the lower surface of the silicon base;

a first electrode and a second electrode disposed on the first insulating layer on a bottom of the recess; and

a reflective layer disposed on the first insulating layer on a sidewall of the recess,

wherein the first electrode, the second electrode, and the reflective layer are separated from one another, and a material of the first electrode, a material of the second electrode, and a material of the reflective layer are the same.

2. The silicon submount for the light emitting diode as recited in claim 1, wherein a thermal conductivity of the first insulating layer is greater than 15 W/mk.

3. The silicon submount for the light emitting diode as recited in claim 2, wherein a material of the first insulating layer comprises aluminum oxide, aluminum nitride, or silicon nitride.

4. The silicon submount for the light emitting diode as recited in claim 1, wherein the material of the first electrode, the material of the second electrode, and the material of the reflective layer comprise silver.

5. The silicon submount for the light emitting diode as recited in claim 1, further comprising a barrier metal layer disposed between the silicon base and the first electrode, between the silicon base and the second electrode, and between the silicon base and the reflective layer.

6. The silicon submount for the light emitting diode as recited in claim 5, wherein a material of the barrier metal layer comprises titanium tungsten/copper.

7. The silicon submount for the light emitting diode as recited in claim 1, further comprising a second insulating layer disposed on an outer sidewall of the silicon base.

8. The silicon submount for the light emitting diode as recited in claim 7, wherein a material of the first insulating layer is different from a material of the second insulating layer.

9. A method of forming a silicon submount for a light emitting diode, comprising:

providing a silicon substrate, wherein the silicon substrate has an upper surface and a lower surface;

forming a plurality of recesses at the upper surface of the silicon substrate;

forming a first insulating layer on the upper surface and the lower surface of the silicon substrate;

forming a metal layer on the upper surface of the silicon substrate; and

patterning the metal layer to form a first electrode and a second electrode on the first insulating layer on a bottom of each of the recesses and to form a reflective layer on the first insulating layer on a sidewall of each of the recesses.

10. The method of forming the silicon submount for the light emitting diode as recited in claim 9, wherein a thermal conductivity of the first insulating layer is greater than 15 W/mk.

11. The method of forming the silicon submount for the light emitting diode as recited in claim 10, wherein a material of the first insulating layer comprises aluminum oxide, aluminum nitride, or silicon nitride.

12. The method of forming the silicon submount for the light emitting diode as recited in claim 10, wherein a method of forming the first insulating layer comprises performing a low pressure chemical vapor deposition process or a sputtering process.

13. The method of forming the silicon submount for the light emitting diode as recited in claim 9, further comprising, after patterning the metal layer,

performing a cutting process on the silicon substrate to form a plurality of silicon bases;

and

coating a second insulating layer on an outer sidewall of each of the silicon bases.

14. The method of forming the silicon submount for the light emitting diode as recited in claim 13, wherein a material of the first insulating layer is different from a material of the second insulating layer.

15. The method of forming the silicon submount for the light emitting diode as recited in claim 9, wherein a method of forming the metal layer comprises performing a multi-step plating process.

16. The method of forming the silicon submount for the light emitting diode as recited in claim 9, wherein a material of the metal layer comprises silver.

17. The method of forming the semiconductor structure as claimed in claim 9, further comprising, after forming the first insulating layer and before forming the metal layer, forming a barrier metal material layer on the upper surface of the silicon substrate.

18. The method of forming the silicon submount for the light emitting diode as recited in claim 17, wherein a material of the barrier metal material layer comprises titanium tungsten/copper.