SOLID-STATE IMAGING DEVICE, AND METHOD FOR DRIVING THE SAME
First Claim
1. A solid-state imaging device comprising:
- a semiconductor substrate;
a plurality of pixels disposed on the semiconductor substrate in rows and columns;
a column signal line formed for each of the columns;
an inverting amplifier connected to each of the column signal lines; and
a feedback line provided, for each of the columns, to feed back an output signal of the inverting amplifier to the pixels in the column,wherein each of the pixels includesa reset transistor, a selection transistor, an amplifying transistor, and a photoelectric conversion unit,the photoelectric conversion unit includes;
a photoelectric conversion film which performs photoelectric conversion;
a pixel electrode formed on a surface of the photoelectric conversion film on a side of the semiconductor substrate; and
a transparent electrode formed on a surface of the photoelectric conversion film on an opposite side of the pixel electrode,wherein the amplifying transistor has a gate connected to the pixel electrode and outputs signal voltage corresponding to potential of the pixel electrode to the column signal line via the selection transistor, andthe reset transistor has one of a source and a drain connected to the pixel electrode and the other of the source and the drain connected to a corresponding feedback line.
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Abstract
A solid-state imaging device according to the present invention includes: a semiconductor substrate; a plurality of pixels disposed on the semiconductor substrate in rows and columns; a column signal line formed for each of the columns; an inverting amplifier connected to the column signal line; and a feedback line, provided for each of the columns, to feed back output signal of the inverting amplifier to pixels in a corresponding column, wherein the amplifying transistor includes a gate connected to the pixel electrode and outputs signal voltage corresponding to the pixel electrode to a column signal line via the selection transistor, and one of a source and a drain of the reset transistor is connected to the pixel electrode and the other is connected to a corresponding feedback line.
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Citations
16 Claims
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1. A solid-state imaging device comprising:
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a semiconductor substrate; a plurality of pixels disposed on the semiconductor substrate in rows and columns; a column signal line formed for each of the columns; an inverting amplifier connected to each of the column signal lines; and a feedback line provided, for each of the columns, to feed back an output signal of the inverting amplifier to the pixels in the column, wherein each of the pixels includes a reset transistor, a selection transistor, an amplifying transistor, and a photoelectric conversion unit, the photoelectric conversion unit includes; a photoelectric conversion film which performs photoelectric conversion; a pixel electrode formed on a surface of the photoelectric conversion film on a side of the semiconductor substrate; and a transparent electrode formed on a surface of the photoelectric conversion film on an opposite side of the pixel electrode, wherein the amplifying transistor has a gate connected to the pixel electrode and outputs signal voltage corresponding to potential of the pixel electrode to the column signal line via the selection transistor, and the reset transistor has one of a source and a drain connected to the pixel electrode and the other of the source and the drain connected to a corresponding feedback line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A solid-state imaging device comprising:
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a plurality of pixels disposed on a semiconductor substrate in rows and columns; a row scanning unit configured to generate a row reset signal; and a waveform adjusting unit configured to adjust a waveform of the row reset signal to be applied to a gate of the reset transistor, wherein each of the pixels includes a reset transistor, a selection transistor, an amplifying transistor, and a photoelectric conversion unit, the photoelectric conversion unit includes; a photoelectric conversion film which performs photoelectric conversion; a pixel electrode formed on a surface of the photoelectric conversion film on a side of the semiconductor substrate; and a transparent electrode formed on a surface of the photoelectric conversion film on an opposite side of the pixel electrode, wherein the amplifying transistor has a gate connected to the pixel electrode and outputs signal voltage corresponding to potential of the pixel electrode to a column signal line via the selection transistor, and the waveform adjusting unit is configured to adjust the waveform of a reset pulse of the reset signal to have a slope at a trailing edge, and to provide the adjusted row reset signal to the gate of the reset transistor.
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16. A method for driving a solid-state imaging device,
wherein the solid-state imaging device includes: -
a semiconductor substrate; a plurality of pixels disposed on the semiconductor substrate in rows and columns; a column signal line formed for each of the columns; an inverting amplifier connected to each of the column signal lines; and a feedback line provided, for each of the columns, to feed back an output signal of the inverting amplifier to the pixels in the column, wherein each of the pixels includes a reset transistor, a selection transistor, an amplifying transistor, and a photoelectric conversion unit, the photoelectric conversion unit includes; a photoelectric conversion film which performs photoelectric conversion; a pixel electrode formed on a surface of the photoelectric conversion film on a side of the semiconductor substrate; and a transparent electrode formed on a surface of the photoelectric conversion film on an opposite side of the pixel electrode, wherein the amplifying transistor has a gate connected to the pixel electrode and outputs signal voltage corresponding to potential of the pixel electrode to the column signal line via the selection transistor, and the reset transistor has one of a source and a drain connected to the pixel electrode and the other of the source and the drain connected to a corresponding feedback line, the method for driving the solid-state imaging device comprising; outputting an output signal of the amplifying transistor to a column signal line by validating a row selection signal in a gate of the selection transistor; and feeding back an output of the inverting amplifier via the reset transistor to the pixel electrode by validating the row reset signal after a certain period of time following validation of the row selection signal.
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Specification