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PERFORMING FORMING PROCESSES ON RESISTIVE MEMORY

  • US 20130107605A1
  • Filed: 11/01/2011
  • Published: 05/02/2013
  • Est. Priority Date: 11/01/2011
  • Status: Active Grant
First Claim
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1. A method of performing a forming process on a storage element of a resistive memory cell, the method comprising:

  • applying a formation signal to the storage element, wherein the formation signal includes;

    a first portion having a first polarity and a first amplitude;

    a second portion having a second polarity and a second amplitude, wherein the second polarity is opposite the first polarity and the second amplitude is smaller than the first amplitude; and

    a third portion having the first polarity and a third amplitude that is smaller than the first amplitude.

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