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PLASMA PROCESSING APPARATUS

  • US 20130112352A1
  • Filed: 12/26/2012
  • Published: 05/09/2013
  • Est. Priority Date: 06/11/2007
  • Status: Active Grant
First Claim
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1. A plasma processing apparatus comprising:

  • a processing chamber produced from a metal;

    a susceptor configured to mount a substrate and installed in the processing chamber;

    an electromagnetic wave source that supplies an electromagnetic wave necessary to excite plasma in the processing chamber;

    one or more dielectric member provided at an inner wall of the processing chamber, and configured to transmit the electromagnetic wave supplied from the electromagnetic wave source into an inside of the processing chamber, the inner wall facing the susceptor;

    one or more metal electrode, wherein each metal electrode is installed on a bottom surface of each dielectric member such that a part of the each dielectric member is exposed to the inside of the processing chamber; and

    a surface wave propagating section which is a metal surface facing the susceptor, the surface wave propagating section being installed adjacent to the dielectric member and being exposed to the inside of the processing chamber,wherein the surface wave propagating section and a bottom surface of the metal electrode are positioned on the same plane.

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