SEMICONDUCTOR STRUCTURE HAVING NANOCRYSTALLINE CORE AND NANOCRYSTALLINE SHELL WITH INSULATOR COATING
First Claim
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1. A semiconductor structure, comprising:
- an anisotropic nanocrystalline core comprising a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0;
a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core; and
an insulator layer encapsulating the nanocrystalline shell and anisotropic nanocrystalline core.
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Abstract
Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. The semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.
52 Citations
65 Claims
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1. A semiconductor structure, comprising:
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an anisotropic nanocrystalline core comprising a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0; a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core; and an insulator layer encapsulating the nanocrystalline shell and anisotropic nanocrystalline core. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A semiconductor structure, comprising:
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a nanocrystalline core comprising a first semiconductor material; a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core; and an insulator layer encapsulating the nanocrystalline shell and core, wherein an outer surface of the insulator layer is ligand-functionalized. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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44. A lighting apparatus, comprising:
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a light emitting diode; and a plurality of semiconductor structures, each semiconductor structure comprising; a quantum dot comprising a nanocrystalline core comprising a first semiconductor material and a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core, the quantum dot having a photoluminescence quantum yield (PLQY) of at least 90%; and an insulator layer encapsulating the quantum dot. - View Dependent Claims (45, 46, 47, 48, 49)
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50. A method of fabricating a semiconductor structure, the method comprising:
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forming an anisotropic nanocrystalline core comprising a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0; forming a nanocrystalline shell from a second, different, semiconductor material to at least partially surround the anisotropic nanocrystalline core; and forming an insulator layer encapsulating the nanocrystalline shell and anisotropic nanocrystalline core. - View Dependent Claims (51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65)
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Specification