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HIGH PERFORMANCE LOW POWER BULK FET DEVICE AND METHOD OF MANUFACTURE

  • US 20130113051A1
  • Filed: 01/02/2013
  • Published: 05/09/2013
  • Est. Priority Date: 09/07/2010
  • Status: Abandoned Application
First Claim
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1. A semiconductor structure, comprising:

  • a field effect transistor (FET) including a channel in a substrate;

    a heavily doped region in the substrate;

    an undoped or lightly doped intermediate layer on the heavily doped region; and

    source and drain regions of the FET on the intermediate layer,wherein the intermediate layer is between the channel and the source and drain regions; and

    the intermediate layer is between the heavily doped region and the source and drain regions.

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