3D Capacitor and Method of Manufacturing Same
First Claim
1. A three-dimensional (3D) capacitor comprising:
- a substrate including a fin structure, the fin structure including a plurality of fins;
an insulation material disposed on the substrate and between each of the plurality of fins;
a dielectric layer disposed on each of the plurality of fins;
a first electrode disposed on a first portion of the fin structure, the first electrode being in direct contact with a surface of the fin structure; and
a second electrode disposed on a second portion of the fin structure, the second electrode being disposed directly on the dielectric layer,wherein the first and second portions of the fin structure are different.
1 Assignment
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Accused Products
Abstract
A 3D capacitor and method for fabricating a 3D capacitor is disclosed. An exemplary 3D capacitor includes a substrate including a fin structure, the fin structure including a plurality of fins. The 3D capacitor further includes an insulation material disposed on the substrate and between each of the plurality of fins. The 3D capacitor further includes a dielectric layer disposed on each of the plurality of fins. The 3D capacitor further includes a first electrode disposed on a first portion of the fin structure. The first electrode being in direct contact with a surface of the fin structure. The 3D capacitor further includes a second electrode disposed on a second portion of the fin structure. The second electrode being disposed directly on the dielectric layer and the first and second portions of the fin structure being different.
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Citations
20 Claims
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1. A three-dimensional (3D) capacitor comprising:
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a substrate including a fin structure, the fin structure including a plurality of fins; an insulation material disposed on the substrate and between each of the plurality of fins; a dielectric layer disposed on each of the plurality of fins; a first electrode disposed on a first portion of the fin structure, the first electrode being in direct contact with a surface of the fin structure; and a second electrode disposed on a second portion of the fin structure, the second electrode being disposed directly on the dielectric layer, wherein the first and second portions of the fin structure are different. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A three-dimensional (3D) capacitor comprising:
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a semiconductor substrate; a fin structure including one or more fins formed on the semiconductor substrate; an insulator material formed between each of the one or more fins; a dielectric layer formed on a first portion of the fin structure; a first electrode formed on the dielectric layer; spacers formed on sidewalls of the first electrode; and a second electrode formed on a second portion of the fin structure, wherein the first and second portions are different, and wherein the second electrode includes a surface that is in direct contact with a surface of the spacers. - View Dependent Claims (9, 10, 11, 12)
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13. A method of manufacturing a three-dimensional (3D) capacitor, comprising:
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providing a substrate; forming a fin structure including one or more fins on the substrate; depositing an insulation material on the substrate and on the fin structure, the insulation material substantially filling a region between each of the one or more fins; removing a portion of the insulation material from the region between each of the one or more fins such that a portion of each of the one or more fins is exposed; forming a dielectric layer over each of the one or more fins; forming a first electrode on a first portion of the fin structure; and forming a second electrode on a second portion of the fin structure, wherein the first and second portions are different, and wherein the first and second electrodes are isolated one from the other. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification