MULTI-WAVELENGTH DBR LASER

• US 20130114628A1
• Filed: 08/09/2012
• Published: 05/09/2013
• Est. Priority Date: 11/07/2011
• Status: Abandoned Application

• Current Assignee: Corning Incorporated
• Original Assignee: Corning Incorporated
• Inventors: Caneau, Catherine Genevieve, Xie, Feng, Zah, Chung-En
• Application Number:
  US13/570,719
• Publication Number:
  US 20130114628A1
• Time in Patent Office: Days
• US Class Current: 372/20
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/0612 controlled by temperature
• CPC Class Codes: H01S 5/06256 with DBR-structure
• CPC Class Codes: H01S 5/1215 Multiplicity of periods
• CPC Class Codes: H01S 5/3401 having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
• CPC Class Codes: H01S 5/3402 intersubband lasers, e.g. transitions within the conduction or valence bands

Abstract

A multi-wavelength distributed Bragg reflector (DBR) laser diode is provided including front and rear DBR sections and a plurality of dedicated tuning signal control nodes. The front DBR section includes a plurality of front wavelength selective grating sections defining a plurality of distinct grating periodicities λ₁*, λ₂* . . . corresponding to distinct Bragg wavelengths λ_S1*, λ_S2* . . . . The rear DBR section comprises a plurality of rear wavelength selective grating sections defining a plurality of distinct grating periodicities λ₁, λ₂ . . . corresponding to distinct Bragg wavelengths λ_S1, λ_S2 . . . . The tuning signal control nodes are associated with corresponding front wavelength selective grating sections, rear wavelength selective grating sections, or both, such that tuning signals applied to one or more of the dedicated tuning signal control nodes spectrally aligns select Bragg wavelengths λ_S1*, λ_S2* . . . of the front DBR section with a selected distinct Bragg wavelengths λ_S1, λ_S2 . . . of the rear DBR section.

Claims

1. A multi-wavelength distributed Bragg reflector (DBR) laser diode comprising front and rear DBR sections, a plurality of dedicated tuning signal control nodes, a gain section, and a waveguide core extending between front and rear facets of the laser diode, wherein:

the gain section comprises an active region and is positioned between the front and rear DBR sections along an optical propagation axis defined by the waveguide core of the laser diode;

the front DBR section comprises a plurality of front wavelength selective grating sections defining a plurality of distinct grating periodicities Λ

₁*, Λ

₂* . . . corresponding to distinct Bragg wavelengths λ

_S1*, λ

_S2* . . . ;

the rear DBR section comprises a plurality of rear wavelength selective grating sections defining a plurality of distinct grating periodicities Λ

₁, Λ

₂ . . . corresponding to distinct Bragg wavelengths λ

_S1, λ

_S2 . . . ;

the plurality of dedicated tuning signal control nodes are associated with individual ones of the front wavelength selective grating sections, individual ones of the rear wavelength selective grating sections, or both, and are constructed such that one or more tuning signals applied to one or more of the dedicated tuning signal control nodes spectrally aligns distinct Bragg wavelengths a selected one of the distinct Bragg wavelengths λ

_S1*, λ

_S2* . . . of the front DBR section with a selected one of the distinct Bragg wavelengths λ

_S1, λ

_S2 . . . of the rear DBR section.

2. A laser diode as claimed in claim 1 wherein:

the front or rear wavelength selective grating sections and the dedicated front or rear tuning signal control nodes are constructed such that a tuning signal applied to one of the dedicated front or rear tuning signal control nodes will place a selected one of the distinct Bragg wavelengths λ

_S1*, λ

_S2* . . . into spectral alignment with a selected one of the distinct Bragg wavelengths λ

_S1, λ

_S2; and

the distinct Bragg wavelengths λ

_S1*, λ

_S2* . . . are shorter or longer than the distinct Bragg wavelengths λ

_S1, λ

_S2.

3. A laser diode as claimed in claim 2 wherein the front and rear wavelength selective grating sections and the dedicated front and rear tuning signal control nodes are constructed such that a tuning signal applied to a dedicated front or rear tuning signal control node associated with a shorter wavelength places a selected one of the distinct Bragg wavelengths λ

_S1*, λ

_S2* . . . into spectral alignment with a selected one of the distinct Bragg wavelengths λ

_S1, λ

_S2.

4. A laser diode as claimed in claim 2 wherein each of the distinct Bragg wavelengths λ

_S1*, λ

_S2* . . . are spectrally misaligned with respect to the corresponding distinct Bragg wavelengths λ

_S1, λ

_S2 . . . by approximately 4.1 cm<sup>−

1</sup> or more for a DBR length of 0.5 mm.

5. A laser diode as claimed in claim 1 wherein:

one or more of the distinct Bragg wavelengths λ

_S1*, λ

_S2* . . . are spectrally aligned with respect to the distinct Bragg wavelengths λ

_S1, λ

_S2 . . . ; and

the front wavelength selective grating sections and the dedicated front tuning signal control nodes are constructed such that tuning signals applied to the dedicated front tuning signal control nodes will alter selected ones of the distinct Bragg wavelengths λ

_S1*, λ

_S2* . . . such that all but one of the distinct Bragg wavelengths λ

_S1*, λ

_S2* . . . are spectrally misaligned with respect to the distinct Bragg wavelengths λ

_S1, λ

_S2.

6. A laser diode as claimed in claim 1 wherein:

the front tuning signal control nodes comprise thermal tuning nodes; and

each of the distinct Bragg wavelengths λ

_S1*, λ

_S2* . . . are shorter than the distinct Bragg wavelengths λ

_S1, λ

_S2 . . . such that a temperature increase initiated by one or more of the front thermal tuning nodes will increase the distinct Bragg wavelengths λ

_S1*, λ

_S2* . . .

7. A laser diode as claimed in claim 1 wherein the front tuning signal control nodes comprise electrical contacts for direct current injection to the front wavelength selective grating sections.

8. A laser diode as claimed in claim 1 wherein:

the rear wavelength selective grating sections comprise one or more rear tuning signal control nodes associated with the rear wavelength selective grating sections; and

the rear tuning signal control nodes are constructed such that one or more tuning signals applied to one or more of the rear tuning signal control nodes will alter one or more of the distinct Bragg wavelengths λ

_S1, λ

_S2 . . .

9. A laser diode as claimed in claim 1 wherein a dedicated front control node comprises a single control node associated with a single front wavelength selective grating section or a plurality of tuning signal control nodes associated with a single front wavelength selective grating section.

10. A laser diode as claimed in claim 1 wherein:

the waveguide core of the laser diode comprises a stack of quantum cascade cores; and

each quantum cascade core comprises a gain peak approximating one of the distinct Bragg wavelengths λ

_S1, λ

_S2 . . . of the rear wavelength selective grating sections.

11. A laser diode as claimed in claim 10 wherein:

the gain section of the laser diode is characterized by a wavelength-dependent optical gain spectrum; and

the quantum cascade cores with relatively low optical gains are placed relatively close to the center of the optical mode of propagation of the laser diode, while the quantum cascade cores with relatively high optical gains are placed relatively far from the center of the optical mode of propagation of the laser diode.

12. A laser diode as claimed in claim 10 wherein:

the gain section of the laser diode is characterized by a wavelength-dependent optical gain spectrum; and

the quantum cascade cores with relatively low optical gains are constructed with a relatively high number of stages or relatively high confinement factors, while the quantum cascade cores with relatively high optical gains are constructed with a relatively low number of stages or relatively low confinement factors.

13. A laser diode as claimed in claim 10 wherein:

relatively short wavelength quantum cascade cores are placed relatively close to the center of the optical mode of propagation of the laser diode, while relatively long wavelength quantum cascade cores are placed relatively far from the center of the optical mode of propagation of the laser diode.

14. A laser diode as claimed in claim 1 wherein the waveguide core of the laser diode comprises a single quantum cascade core with a gain spectrum that is broad enough to encompass the distinct Bragg wavelengths λ

_S1, λ

_S2 . . . of the rear wavelength selective grating sections.

15. A laser diode as claimed in claim 1 wherein the waveguide core of the laser diode comprises a uni-polar QCL using inter-sub-band transitions to produce photons.

16. A laser diode as claimed in claim 1 wherein the waveguide core of the laser diode comprises a bi-polar laser using inter-band transitions to produce photons.

17. A laser diode as claimed in claim 1 wherein:

the gain section of the laser diode is characterized by a wavelength-dependent optical gain spectrum; and

the front and rear wavelength selective grating sections are arranged along the optical propagation axis of the laser diode such that grating sections corresponding to reflectance peaks in relatively low gain portions of the optical gain spectrum are positioned relatively close to the gain section of the laser diode, while grating sections corresponding to reflectance peaks in relatively high gain portions of the optical gain spectrum are positioned relatively far from the gain section of the laser diode.

18. A laser diode as claimed in claim 1 wherein:

the gain section of the laser diode is characterized by a wavelength-dependent optical gain spectrum; and

the front grating section corresponding to a reflectance peak in the lowest gain portion of the optical gain spectrum is positioned closest to the gain section along a front portion of the optical propagation axis of the laser diode.

19. A laser diode as claimed in claim 1 wherein:

the gain section of the laser diode is characterized by a wavelength-dependent optical gain spectrum; and

the rear grating section corresponding to a reflectance peak in the lowest gain portion of the optical gain spectrum is positioned closest to the gain section along a rear portion of the optical propagation axis of the laser diode.

20. A multi-wavelength distributed Bragg reflector (DBR) laser diode comprising front and rear DBR sections, a plurality of dedicated tuning signal control nodes, a gain section, and a waveguide core extending between front and rear facets of the laser diode, wherein:

the gain section comprises an active region and is positioned between the front and rear DBR sections along an optical propagation axis defined by the waveguide core of the laser diode;

the front DBR section comprises a plurality of front wavelength selective grating sections defining a plurality of distinct grating periodicities Λ

₁*, Λ

₂* . . . corresponding to distinct Bragg wavelengths λ

_S1*, λ

_S2* . . . ;

the rear DBR section comprises a plurality of rear wavelength selective grating sections defining a plurality of distinct grating periodicities Λ

₁, Λ

₂ . . . corresponding to distinct Bragg wavelengths λ

_S1, λ

_S2 . . . ;

each of the distinct Bragg wavelengths λ

_S1*, λ

_S2* . . . are shorter than and spectrally misaligned with respect to the distinct Bragg wavelengths λ

_S1, λ

_S2 . . . ;

the plurality of dedicated tuning signal control nodes are associated with individual ones of the front wavelength selective grating sections and are constructed such that one or more tuning signals applied to one or more of the front dedicated tuning signal control nodes spectrally aligns distinct Bragg wavelengths a selected one of the distinct Bragg wavelengths λ

_S1*, λ

_S2* . . . of the front DBR section with a selected one of the distinct Bragg wavelengths λ

_S1, λ

_S2 . . . of the rear DBR section;

the waveguide core of the laser diode comprises a stack of quantum cascade cores;

each quantum cascade core comprises a gain peak approximating one of the distinct Bragg wavelengths λ

_S1, λ

_S2 . . . of the rear wavelength selective grating sections;

the gain section of the laser diode is characterized by a wavelength-dependent optical gain spectrum;

the quantum cascade cores with relatively low optical gains are placed relatively close to the center of the optical mode of propagation of the laser diode, while the quantum cascade cores with relatively high optical gains are placed relatively far from the center of the optical mode of propagation of the laser diode; and

the front grating section corresponding to a reflectance peak in the lowest gain portion of the optical gain spectrum is positioned closest to the gain section along a front portion of the optical propagation axis of the laser diode.