Optical Arrangement and a Method of Forming the Same

• US 20130114924A1
• Filed: 04/26/2011
• Published: 05/09/2013
• Est. Priority Date: 04/29/2010
• Status: Abandoned Application

• Current Assignee: Agency For Science Technology and Research
• Original Assignee: Agency For Science Technology and Research
• Inventors: Loh, Ter-Hoe, Ho, Seng-Tiong, Huang, Yingyan
• Application Number:
  US13/695,142
• Publication Number:
  US 20130114924A1
• Time in Patent Office: Days
• US Class Current: 385/14
• CPC Class Codes: G02B 6/12 of the integrated circuit kind electric integrated circuits H01L27/00
• CPC Class Codes: G02B 6/1245 Geodesic lenses
• CPC Class Codes: G02B 6/305 and having an integrated mode-size expanding section, e.g. tapered waveguide
• CPC Class Codes: G02B 6/32 having lens focusing means positioned between opposed fibre ends with lens being an integral part of the single fibre end G02B6/262

Abstract

According to embodiments of the present invention, an optical arrangement is provided. The optical arrangement includes a support substrate; at least one optical fiber arranged on the support substrate; at least one waveguide arranged on the support substrate and adjacent to the at least one optical fiber; the at least one waveguide defining a light propagation direction; and at least one grin index lens arranged asymmetrically relative to the light propagation direction such that light is coupled from the at least one optical fiber through the at least one grin index lens to the at least one waveguide.

Claims

1. An optical arrangement comprising:

a support substrate;

at least one optical fiber arranged on the support substrate;

at least one waveguide arranged on the support substrate and adjacent to the at least one optical fiber;

the at least one waveguide defining a light propagation direction; and

at least one grin index lens arranged asymmetrically relative to the light propagation direction such that light is coupled from the at least one optical fiber through the at least one grin index lens to the at least one waveguide.

2. The optical arrangement of claim 1, wherein the at least one grin index lens comprises a multi-layer structure of at least two different layers with a difference in refractive index such that the at least one grin index lens is configured to allow a variation in the difference in refractive index to achieve a desired focus spot size so as to enable coupling of an optical mode in the at least one optical fiber to the at least one waveguide.

4. The optical arrangement of claim 2, wherein the at least two different layers include a combination of materials selected from a group consisting of silicon and silicon oxide, silicon and hafnium oxide, and silicon and titanium oxide.

5. The optical arrangement of claim 1, further comprising an insulating layer arranged on the support substrate.

9. The optical arrangement of claim 5, wherein the insulating layer is a buried oxide layer.

10. The optical arrangement of claim 1, wherein the at least one grin index lens comprises a parabolic or near-parabolic refractive index profile.

11. The optical arrangement of claim 1, wherein the at least one waveguide comprises an up-tapered waveguide.

12. The optical arrangement of claim 1, wherein the at least one waveguide comprises a decreasing cross-sectional dimension in a direction away from the at least one grin index lens.

16. The optical arrangement of claim 1, wherein the support substrate comprises at least one first groove.

17. The optical arrangement of claim 16, wherein the at least one optical fiber is positioned in the at least one first groove so as to allow an optical alignment of the at least one optical fiber to the at least one grin index lens.

19. The optical arrangement of claim 16, further comprising a capping substrate.

20. The optical arrangement of claim 19, wherein the capping substrate comprises at least one second groove.

23. The optical arrangement of claim 19, further comprising at least one interconnect arranged between the capping substrate and the support substrate, the at least one interconnect is configured to secure the at least one optical fiber in a desired position between the capping substrate and the support substrate.

26. The optical arrangement of claim 19, wherein the capping substrate comprises a metallic substrate.

29. The optical arrangement of claim 1, further comprising an electronics-photonics integrated circuit, wherein the at least one waveguide is optically coupled to the electronics-photonics integrated circuit.

3. (canceled)

6-8. -8. (canceled)

13-15. -15. (canceled)

18. (canceled)

21-22. -22. (canceled)

24-25. -25. (canceled)

27-28. -28. (canceled)

30-32. -32. (canceled)

33. A method of forming an optical arrangement, the method comprising:

forming at least one optical fiber on a support substrate;

forming at least one waveguide on the support substrate and adjacent to the at least one optical fiber;

forming at least one grin index lens asymmetrically relative to a light propagation direction within the at least one waveguide and further between the at least one optical fiber and the at least one waveguide such that light is coupled from the at least one optical fiber through the at least one grin index lens to the at least one waveguide.

34. The method of claim 33, wherein forming the at least one waveguide on the support substrate and adjacent to the at least one optical fiber comprises:

forming at least one waveguide layer on the support substrate; and

patterning the at least one waveguide layer to form the at least one waveguide.

35. The method of claim 34, wherein forming the at least one grin index lens comprises:

forming a first masking layer on at least one grin index lens structure;

forming a first photoresist layer with a desired pattern on the first masking layer;

patterning the desired pattern of the first photoresist layer onto the first masking layer; and

removing portions of the first masking layer and the at least one grin index lens structure not covered by the first photoresist layer.

36. The method of claim 35, wherein patterning the desired pattern of the first photoresist layer onto the first masking layer comprises dry etching by argon/chlorine reactive ion beam etching.

40. The method of claim 34, wherein forming the at least one grin index lens comprises:

forming a second photoresist layer with at least one opening on at least one grin index lens structure;

forming a second masking layer into the at least one opening; and

removing the second photoresist layer and portions of the at least one grin index lens structure not covered by the second masking layer.

41. The method of claim 40, wherein forming the second masking layer into the at least one opening comprises electroplating the second masking layer into the at least one opening.

44. The method of claim 35, wherein forming the at least one grin index lens further comprises forming the at least one grin index lens structure over the support substrate and in contact with the at least one waveguide.

45. The method of claim 44, wherein forming the at least one grin index lens structure over the support substrate and in contact with the at least one waveguide comprises depositing a plurality of a pair of two different layers with a difference in refractive index in an alternating sequence over the support substrate.

46. The method of claim 45, wherein removing portions of the first masking layer and the at least one grin index lens structure not covered by the first photoresist layer comprises etching using etchant gases with a substantially equal etch rate of the pair of two different layers.

47. The method of claim 45, wherein removing the second photoresist layer and portions of the at least one grin index structure not covered by the second masking layer comprises etching using etchant gases with a substantially equal etch rate of the pair of two different layers.

49. The method of claim 44, further comprising forming an etch stop layer over the support substrate.

50. The method of claim 49, further comprising providing heat treatment after depositing a first of the plurality of the pair of two different layers.

51. The method of claim 50, wherein providing heat treatment comprises performing rapid thermal annealing for silicidation of the first of the pair of two different layers with the etch stop layer.

37-39. -39. (canceled)

42-43. -43. (canceled)

48. (canceled)