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HIGH EMISSIVITY DISTRIBUTION PLATE IN VAPOR DEPOSITION APPARATUS AND PROCESSES

  • US 20130115372A1
  • Filed: 11/08/2011
  • Published: 05/09/2013
  • Est. Priority Date: 11/08/2011
  • Status: Abandoned Application
First Claim
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1. An apparatus for vapor deposition of a sublimated source material as a thin film on a substrate, the apparatus comprising:

  • deposition head;

    a receptacle disposed in said deposition head, said receptacle configured for receipt of a source material;

    a heated distribution manifold disposed below said receptacle, said heated distribution manifold configured to heat said receptacle to a degree sufficient to sublimate the source material within said receptacle; and

    ,a deposition plate disposed below said distribution manifold and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through said apparatus, said distribution plate defining a pattern of passages therethrough that further distribute the sublimated source material passing through said distribution manifold, wherein said distribution plate has an emissivity in a range of about 0.7 to a theoretical maximum of 1.0 at a plate temperature during deposition.

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