HIGH EMISSIVITY DISTRIBUTION PLATE IN VAPOR DEPOSITION APPARATUS AND PROCESSES

• US 20130115372A1
• Filed: 11/08/2011
• Published: 05/09/2013
• Est. Priority Date: 11/08/2011
• Status: Abandoned Application

• Current Assignee: First Solar Incorporated
• Original Assignee: PrimeStar Solar, Inc. (GE Aerospace)
• Inventors: Pavol, Mark Jeffrey, Rathweg, Christopher
• Application Number:
  US13/291,421
• Publication Number:
  US 20130115372A1
• Time in Patent Office: Days
• US Class Current: 427/248.1
• CPC Class Codes: C23C 14/0629 of zinc, cadmium or mercury
• CPC Class Codes: C23C 14/24 Vacuum evaporation
• CPC Class Codes: C23C 14/562 for coating elongated substrates
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4557 Heated nozzles
• CPC Class Codes: H01L 31/1828 the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe

Abstract

Apparatus and processes for vapor deposition of a sublimated source material as a thin film on a substrate are provided. The apparatus can include a deposition head; a receptacle disposed in the deposition head and configured for receipt of a source material; a heated distribution manifold disposed below the receptacle and configured to heat the receptacle to a degree sufficient to sublimate the source material within the receptacle; and, a deposition plate disposed below the distribution manifold and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through the apparatus. The distribution plate can define a pattern of passages therethrough that further distribute the sublimated source material passing through the distribution manifold. The distribution plate can have an emissivity in a range of about 0.7 to a theoretical maximum of 1.0 at a plate temperature during deposition.

Claims

1. An apparatus for vapor deposition of a sublimated source material as a thin film on a substrate, the apparatus comprising:

deposition head;

a receptacle disposed in said deposition head, said receptacle configured for receipt of a source material;

a heated distribution manifold disposed below said receptacle, said heated distribution manifold configured to heat said receptacle to a degree sufficient to sublimate the source material within said receptacle; and

,

a deposition plate disposed below said distribution manifold and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through said apparatus, said distribution plate defining a pattern of passages therethrough that further distribute the sublimated source material passing through said distribution manifold, wherein said distribution plate has an emissivity in a range of about 0.7 to a theoretical maximum of 1.0 at a plate temperature during deposition.

2. The apparatus as in claim 1, wherein the distribution plate has an emissivity of about 0.85 to about 0.95 at the plate temperature during deposition.

3. The apparatus as in claim 1, wherein the distribution plate comprises graphite.

4. The apparatus as in claim 1, wherein the distribution plate comprises a ceramic material.

5. The apparatus as in claim 4, wherein the ceramic material comprises alumina.

6. The apparatus as in claim 1, wherein the distribution plate comprises a core plate having a surface coating.

7. The apparatus as in claim 6, wherein the surface coating comprises a high emissivity material having an emissivity in a range of about 0.7 to a theoretical maximum of 1.0 at a plate temperature during deposition.

8. The apparatus as in claim 6, wherein the surface coating comprises graphite.

9. The apparatus as in claim 1, wherein the distribution plate comprises a first layer and a second layer, wherein the first layer faces the heated distribution manifold and the second layer faces horizontal conveyance plane of the upper surface of the substrate.

10. The apparatus as in claim 9, wherein the first layer has a first emissivity and the second layer has a second emissivity, wherein the first emissivity is different than the second emissivity.

11. The apparatus as in claim 10, wherein the first emissivity is higher than the second emissivity.

12. The apparatus as in claim 10, wherein the first emissivity is lower than the second emissivity.

13. An apparatus for vapor deposition of a sublimated source material as a thin film on a substrate, the apparatus comprising:

a deposition head;

a receptacle disposed in said deposition head, said receptacle configured for receipt of a source material;

a heated distribution manifold disposed below said receptacle, said heated distribution manifold configured to heat said receptacle to a degree sufficient to sublimate the source material within said receptacle; and

,

a deposition plate disposed below said distribution manifold and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through said apparatus, said distribution plate defining a pattern of passages therethrough that further distribute the sublimated source material passing through said distribution manifold, wherein the distribution plate comprises a first layer facing the heated distribution manifold and a second layer facing horizontal conveyance plane of the upper surface of the substrate, and wherein the first layer has a first emissivity and the second layer has a second emissivity, wherein the first emissivity is lower than the second emissivity at the plate temperature during deposition.

14. The apparatus as in claim 13, wherein the second layer comprises graphite.

15. The apparatus as in claim 13, wherein the second layer comprises a ceramic material.

16. The apparatus as in claim 15, wherein the ceramic material comprises alumina.

17. The apparatus as in claim 13, wherein the second layer comprises a high emissivity material having an emissivity of at least 0.8.

18. The apparatus as in claim 13, wherein the first layer is welded to the second layer.

19. A process for vapor deposition of a sublimated source material to form thin film on a substrate, the process comprising:

Supplying a source material to a receptacle within a deposition head;

indirectly heating the receptacle with a heat source member disposed below the receptacle to sublimate the source material, wherein the sublimated source material is directed downwardly within the deposition head through the heat source member;

conveying individual substrates below the heat source member; and

,

distributing the sublimated source material that passes through the heat source member onto an upper surface of the substrates via a distribution plate posited between the upper surface of the substrate and the heat source member, wherein the distribution plate is positioned about 5 mm to about 50 mm from the upper surface of the substrate, and wherein the distribution plate has a sufficient emissivity such that when the distribution plate is heated by the heat source member to a plate temperature, the substrate heats at least 75°

C. from an initial substrate temperature in about 20 seconds or less.

20. The process as in claim 19, wherein the distribution plate has the plate temperature of about 700°

C. to about 800°

C.