HIGH EMISSIVITY DISTRIBUTION PLATE IN VAPOR DEPOSITION APPARATUS AND PROCESSES
First Claim
1. An apparatus for vapor deposition of a sublimated source material as a thin film on a substrate, the apparatus comprising:
- deposition head;
a receptacle disposed in said deposition head, said receptacle configured for receipt of a source material;
a heated distribution manifold disposed below said receptacle, said heated distribution manifold configured to heat said receptacle to a degree sufficient to sublimate the source material within said receptacle; and
,a deposition plate disposed below said distribution manifold and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through said apparatus, said distribution plate defining a pattern of passages therethrough that further distribute the sublimated source material passing through said distribution manifold, wherein said distribution plate has an emissivity in a range of about 0.7 to a theoretical maximum of 1.0 at a plate temperature during deposition.
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Accused Products
Abstract
Apparatus and processes for vapor deposition of a sublimated source material as a thin film on a substrate are provided. The apparatus can include a deposition head; a receptacle disposed in the deposition head and configured for receipt of a source material; a heated distribution manifold disposed below the receptacle and configured to heat the receptacle to a degree sufficient to sublimate the source material within the receptacle; and, a deposition plate disposed below the distribution manifold and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through the apparatus. The distribution plate can define a pattern of passages therethrough that further distribute the sublimated source material passing through the distribution manifold. The distribution plate can have an emissivity in a range of about 0.7 to a theoretical maximum of 1.0 at a plate temperature during deposition.
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Citations
20 Claims
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1. An apparatus for vapor deposition of a sublimated source material as a thin film on a substrate, the apparatus comprising:
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deposition head; a receptacle disposed in said deposition head, said receptacle configured for receipt of a source material; a heated distribution manifold disposed below said receptacle, said heated distribution manifold configured to heat said receptacle to a degree sufficient to sublimate the source material within said receptacle; and
,a deposition plate disposed below said distribution manifold and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through said apparatus, said distribution plate defining a pattern of passages therethrough that further distribute the sublimated source material passing through said distribution manifold, wherein said distribution plate has an emissivity in a range of about 0.7 to a theoretical maximum of 1.0 at a plate temperature during deposition. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. An apparatus for vapor deposition of a sublimated source material as a thin film on a substrate, the apparatus comprising:
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a deposition head; a receptacle disposed in said deposition head, said receptacle configured for receipt of a source material; a heated distribution manifold disposed below said receptacle, said heated distribution manifold configured to heat said receptacle to a degree sufficient to sublimate the source material within said receptacle; and
,a deposition plate disposed below said distribution manifold and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through said apparatus, said distribution plate defining a pattern of passages therethrough that further distribute the sublimated source material passing through said distribution manifold, wherein the distribution plate comprises a first layer facing the heated distribution manifold and a second layer facing horizontal conveyance plane of the upper surface of the substrate, and wherein the first layer has a first emissivity and the second layer has a second emissivity, wherein the first emissivity is lower than the second emissivity at the plate temperature during deposition. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A process for vapor deposition of a sublimated source material to form thin film on a substrate, the process comprising:
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Supplying a source material to a receptacle within a deposition head; indirectly heating the receptacle with a heat source member disposed below the receptacle to sublimate the source material, wherein the sublimated source material is directed downwardly within the deposition head through the heat source member; conveying individual substrates below the heat source member; and
,distributing the sublimated source material that passes through the heat source member onto an upper surface of the substrates via a distribution plate posited between the upper surface of the substrate and the heat source member, wherein the distribution plate is positioned about 5 mm to about 50 mm from the upper surface of the substrate, and wherein the distribution plate has a sufficient emissivity such that when the distribution plate is heated by the heat source member to a plate temperature, the substrate heats at least 75°
C. from an initial substrate temperature in about 20 seconds or less. - View Dependent Claims (20)
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Specification